SI2308BDS

Symbol Micros: TSI2308bds c
Case : SOT23
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Transistor N-Channel MOSFET; 60V; 20V; 105mOhm; 3A; 350mW; -55°C~150°C; Substitute: SI2308BDS-VB; SI2308BDS-T1-E3; SI2308BDS-T1-BE3; SI2308BDS-T1-GE3; SI2308BDS-T1-GE3-VB;
Parameters
Open channel resistance: 105mOhm
Max. drain current: 3A
Max. power loss: 350mW
Case: SOT23
Manufacturer: TECH PUBLIC
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: TECH PUBLIC Manufacturer part number: SI2308BDS RoHS E8. Case style: SOT23t/r Datasheet
In stock:
140 pcs.
Quantity of pcs. 3+ 10+ 40+ 150+ 750+
Net price (EUR) 0,2872 0,1831 0,1326 0,1134 0,1046
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Packaging:
150
Open channel resistance: 105mOhm
Max. drain current: 3A
Max. power loss: 350mW
Case: SOT23
Manufacturer: TECH PUBLIC
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD