SI2308BDS
Symbol Micros:
TSI2308bds c
Case : SOT23
Transistor N-Channel MOSFET; 60V; 20V; 105mOhm; 3A; 350mW; -55°C~150°C; Substitute: SI2308BDS-VB; SI2308BDS-T1-E3; SI2308BDS-T1-BE3; SI2308BDS-T1-GE3; SI2308BDS-T1-GE3-VB;
Parameters
Open channel resistance: | 105mOhm |
Max. drain current: | 3A |
Max. power loss: | 350mW |
Case: | SOT23 |
Manufacturer: | TECH PUBLIC |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Open channel resistance: | 105mOhm |
Max. drain current: | 3A |
Max. power loss: | 350mW |
Case: | SOT23 |
Manufacturer: | TECH PUBLIC |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |