STP9NM60N

Symbol Micros: TSTP9nm60n
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Case : TO220
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N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET
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Parameters
Open channel resistance: 745mOhm
Max. drain current: 6,5A
Max. power loss: 70W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP9NM60N RoHS Case style: TO220 Datasheet
In stock:
39 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2127 0,8902 0,7127 0,6122 0,5771
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Packaging:
50
Open channel resistance: 745mOhm
Max. drain current: 6,5A
Max. power loss: 70W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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