STP9NM60N

Symbol Micros: TSTP9nm60n
Contractor Symbol:
Case : TO220
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET
Parameters
Open channel resistance: 745mOhm
Max. drain current: 6,5A
Max. power loss: 70W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP9NM60N RoHS Case style: TO220 Datasheet
In stock:
39 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2100 0,8883 0,7111 0,6108 0,5759
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Packaging:
50
Manufacturer:: ST Manufacturer part number: STP9NM60N Case style: TO220  
External warehouse:
2000 pcs.
Quantity of pcs. 150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7923
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STP9NM60N Case style: TO220  
External warehouse:
3000 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7636
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 745mOhm
Max. drain current: 6,5A
Max. power loss: 70W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT