TSM2312CX RFG

Symbol Micros: TTSM2312cx
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Case : SOT23-3
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Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R
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Parameters
Open channel resistance: 51mOhm
Max. drain current: 4,9A
Max. power loss: 750mW
Case: SOT23-3
Manufacturer: TAI-SEM
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2312CX RFG RoHS Case style: SOT23-3 t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5117 0,3108 0,2383 0,2150 0,2045
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Packaging:
200
Open channel resistance: 51mOhm
Max. drain current: 4,9A
Max. power loss: 750mW
Case: SOT23-3
Manufacturer: TAI-SEM
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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