TSM900N06CW

Symbol Micros: TTSM900n06cw
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Case : SOT223
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Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG
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Parameters
Open channel resistance: 100mOhm
Max. drain current: 11A
Max. power loss: 4,17W
Case: SOT223
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM900N06CW RPG RoHS Case style: SOT223t/r Datasheet
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6776 0,4253 0,3528 0,3154 0,2944
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Packaging:
100
Open channel resistance: 100mOhm
Max. drain current: 11A
Max. power loss: 4,17W
Case: SOT223
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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