Transistors (results: 8459)

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Open channel resistance
Max. drain current
Max. power loss
Case
Manufacturer
Power dissipation
Current gain factor
Cutoff frequency
Gate charge
Max. dissipated power
Max. drain-source voltage
Max. collector current
Max collector-emmiter voltage
Max. collector current
Max collector current (impulse)
Forvard volatge [Vgeth]
Transistor type
Max. drain-gate voltage
Operating temperature (range)
Max. gate-source Voltage
Collector-emitter voltage
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Gate-emitter voltage
Transistor circuits [Y/N]
ZXM61N02FTA SOT-23-3 MOSFETs ROHS
ZXM61N02FTA SOT23
                                                   
Item available on a request
                                                     
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 5
                                               
BC857BW YANGJIE TECHNOLOGY Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323 BC857BW-YAN
BC857BW YANGJIE TECHNOLOGY SOT323
 
 
Item available on a request
                                               
PDTC114ET Transistor NPN; 30; 200mW; 50V; 100mA; 250MHz; -55°C ~ 150°C; Equivalent: PDTC114ET,215; PDTC114ET,235;
PDTC114ET SOT23
  SOT23 200mW 30 250MHz 100mA 50V NPN -55°C ~ 150°C
 
Item available on a request
                                               
BGH75N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
BGH75N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH75N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 338W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH75N120HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
BGH75N120HF1 BASiC SEMICONDUCTOR Rys.TBGH75N120HF1
  TO247-3 BASiC SEMICONDUCTOR 398nC 568W 75A 200A 4,2V ~ 5,8V -40°C ~ 150°C 1200V THT 20V
 
Item available on a request
                                               
BGH50N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH50N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
AUIR3313S INTERNATIONAL RECTIFIER Power Switch Hi Side 7A AUIR3313STRL(800pcs/reel) ; AUIR3313S(50pcs/Tube)
AUIR3313S INTERNATIONAL RECTIFIER TO263/5(D2PAK)
  TO263/5(D2PAK) International Rectifier -40°C ~ 150°C THT
 
Item available on a request
                                               
BGH50N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65HS1 BASiC SEMICONDUCTOR Rys.TBGH50N65HS1
  TO247-3 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH50N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65HF1 BASiC SEMICONDUCTOR Rys.TBGH50N65HF1
  TO247-3 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH75N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
BGH75N65HF1 BASiC SEMICONDUCTOR Rys.TBGH75N65HF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 405W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BC846C SOT23 YFW Transistor NPN; Bipolar; 30V; 6V; 800; 100MHz; 100mA; 200mW; -55°C~150°C;
BC846C SOT23 YFW SOT23
                                                   
Item available on a request
SOT23 YFW 200mW 800 100MHz 100mA 30V NPN -55°C ~ 150°C
                                                     
Item in delivery
Estimated time: 2025-03-14
Quantity of pieces: 6000
                                               
2N6488G NPN 15A 80V 75W (=BDP395) Similar to 2N6488;
2N6488G TO220
  TO220 ON 75W 200 4MHz 15A 90V NPN -55°C ~ 150°C
 
Item available on a request
                                               
TIP147T Tranzystor PNP; 1000; 90W; 100V; 10A; -65°C ~ 150°C; Odpowiednik: TIP147T-CDI; TIP147TTU (ONS); TIP147T (ONS); TIP147T (STM);
TIP147T TO220
                                                   
Item available on a request
TO220 STMicroelectronics 90W 1000 10A 100V PNP -65°C ~ 150°C
                                                     
Item in delivery
Estimated time: 2025-04-20
Quantity of pieces: 500
                                               
CJ3400S3 30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs ROHS Podobny do: RTR040N03TL;
CJ3400S3 SOT23
 
 
Item available on a request
                                               
IPG20N06S2L35ATMA1 Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP
IPG20N06S2L35ATMA1 TDSON-8
 
 
Item available on a request
                                               
IPD60R1K5CE Trans MOSFET N-CH 600V 5A
IPD60R1K5CE  
 
 
Item available on a request
                                               
IPD50R2K0CE Trans MOSFET N-CH 500V 3.6A IPD50R2K0CEAUMA1 IPD50R2K0CEBTMA1
IPD50R2K0CE  
 
 
Item available on a request
                                               
IPD50N10S3L16ATMA1 Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) DPAK
IPD50N10S3L16ATMA1  
 
 
Item available on a request
                                               
IPD50N06S214ATMA1 Trans MOSFET N-CH 55V 50A Automotive 3-Pin(2+Tab) DPAK
IPD50N06S214ATMA1  
 
 
Item available on a request
                                               
IPD122N10N3GATMA1 Trans MOSFET N-CH 100V 59A Automotive 3-Pin(2+Tab) DPAK
IPD122N10N3GATMA1  
 
 
Item available on a request
                                               
IPB60R099C6 Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK
IPB60R099C6  
 
 
Item available on a request
                                               
IPB180N06S4H1ATMA1 Trans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK
IPB180N06S4H1ATMA1  
 
 
Item available on a request
                                               
IPB117N20NFD Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK
IPB117N20NFD  
 
 
Item available on a request
                                               
IPB038N12N3GATMA1 Trans MOSFET N-CH 120V 120A Automotive 3-Pin(2+Tab) D2PAK
IPB038N12N3GATMA1  
 
 
Item available on a request
                                               
IPB020NE7N3GATMA1 Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK
IPB020NE7N3GATMA1  
 
 
Item available on a request
                                               
IPAW60R180P7SXKSA1 Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP
IPAW60R180P7SXKSA1  
 
 
Item available on a request
                                               
IPA80R450P7XKSA1 Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP
IPA80R450P7XKSA1  
 
 
Item available on a request
                                               
IPB020N10N5LFATMA1 Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK
IPB020N10N5LFATMA1 D2PAK
 
 
Item available on a request
                                               
BGH75N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
BGH75N65HS1 BASiC SEMICONDUCTOR Rys.TBGH75N65HS1
  TO247-3 BASiC SEMICONDUCTOR 444nC 405W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
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Transistors

Field effect, bipolar and IGBT transistors - all those three types can be found in the Micros store. Get acquainted with the usage of transistors and what are the differences between particular types. Please check why it is worth choosing products offered by us.

What is a transistor and what is it used for?

Transistor is a semiconductor that has the capability of amplifying the electric signal.

The device is characterised by small size, hence it replaced vacuum tubes used before. It is believed that one of the main factors for the electronic development acceleration in the recent decades was introducing transistors to the market. It was possible thanks to the capability of significantly amplifying the signal by using small and not so complicated elements. However, why in fact it turned out to be that important and what are the uses of transistors in present day electronics? Here are few examples:

  • It is the most important part of amplifiers; 
  • It is used as a structural element in semiconductor memory;
  • It takes part in a signal transmission, e.g. in phase shift modules and generators;

Types of transistors

It is hard to answer the question “What are transistors used for?” without explaining what are the differences between them. In Micros offer you will find every transistor that you might need. Our offer includes devices with a variety of applications, because our aim is to meet the needs of every customer. When it comes to transistors, we can distinguish three main types, and dozens of devices from each type can be found in the relevant product category in our store. The three main types are:

  • Field effect transistors
  • Bipolar transistors
  • IGBT transistors

We can assume that the field effect transistors are the most classic version of transistors. This invention is nearly 100 years old, however it is still incredibly useful. FET(Field Effect Transistor) consists of one semiconductor layer and the current is controlled by using the electromagnetic field.

Bipolar transistors, which are also available in our offer, are made up of three semiconductor layers, and each one of them represents a different type of semiconductivity. IGBT transistors on the other hand are a variety of bipolar transistors equipped with additional insulated gate.

Transistors in our offer

Our offer includes transistors with a vast variety of applications. We provide numerous FET models, called unipolar, which are essential parts of integrated circuits or switches. If you need parts for current amplifiers, choose our bipolar transistors. Moreover, essential parts for photovoltaic installations can be found in the “IGBT Transistors” category.

Our products come from proven manufacturers. Among our transistor suppliers you will find such brands as: NXP, Hottech, Infineon or Born. Each transistor is checked before being admitted to trading. These steps are taken in order to be sure that the client will receive a qualitative and fully functioning device.