Unipolar Transistors (results: 5438)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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IPB017N06N03G Infineon
N-MOSFET 60V 180A 250W 1.7mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB017N06N3GATMA1 Case style: TO263/7 |
External warehouse:
4000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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Manufacturer:
Infineon Manufacturer part number: IPB017N06N3GATMA1 Case style: TO263/7 |
External warehouse:
2000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB017N10N5 Infineon
N-MOSFET 100V 180A 375W 1.7mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB017N10N5ATMA1 Case style: TO263/7 |
External warehouse:
2000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB019N06L3G Infineon
N-MOSFET 60V 120A 250W 1.9mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB019N06L3GATMA1 Case style: TO263/3 |
External warehouse:
6000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB019N08N3 G
N-MOSFET 180A 80V 300W 0.0019Ω
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Manufacturer:
Infineon Manufacturer part number: IPB019N08N3GATMA1 Case style: TO263/7 |
External warehouse:
4000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
N-MOSFET | 80V | 20V | 1,9mOhm | 100A | 300W | SMD | -55°C ~ 175°C | TO263/7 | INFINEON | |||||
IPB026N10NF2SATMA1 Infineon Technologies
TRENCH >=100V Transistors - FETs, MOSFETs - Single
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Manufacturer:
Infineon Manufacturer part number: IPB026N10NF2SATMA1 Case style: |
External warehouse:
800 pcs. |
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Packaging: 800 Minimum order amount must exceed 20 Euro. |
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IPB027N10N3G Infineon
N-MOSFET 100V 120A 300W 2.7mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB027N10N3GATMA1 Case style: TO263/3 |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB029N06N3GATMA1
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK
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Manufacturer:
Infineon Manufacturer part number: IPB029N06N3GATMA1 Case style: D2PAK |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
N-MOSFET | 60V | 20V | 3,2mOhm | 120A | 188W | SMD | -55°C ~ 175°C | D2PAK | Infineon Technologies | |||||
Manufacturer:
Infineon Manufacturer part number: IPB029N06N3GATMA1 Case style: D2PAK |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
N-MOSFET | 60V | 20V | 3,2mOhm | 120A | 188W | SMD | -55°C ~ 175°C | D2PAK | Infineon Technologies | |||||
IPB030N08N3GATMA1
Trans MOSFET N-CH 80V 160A Automotive 7-Pin(6+Tab) D2PAK
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Manufacturer:
Infineon Manufacturer part number: IPB030N08N3GATMA1 Case style: D2PAK |
External warehouse:
4000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB034N06N3G
MOSFET N-CH 60V 100A TO263-7 IPB034N06N3G
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Manufacturer:
Infineon Manufacturer part number: IPB034N06N3GATMA2 Case style: |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB037N06N3G INFINEON
N-MOSFET 60V 90A 188W 3.7mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB037N06N3GATMA1 Case style: TO263/3 |
External warehouse:
2000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB039N10N3G INFINEON
N-MOSFET 100V 160A 214W 3.9mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB039N10N3GATMA1 Case style: TO263/7 |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB042N10N3G Infineon
N-MOSFET 100V 100A 214W 4.2mΩ IPB042N10N3GATMA1 IPB042N10N3GATMA1 IPB042N10N3GE8187ATMA1
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Manufacturer:
Infineon Manufacturer part number: IPB042N10N3GATMA1 Case style: TO263/3 |
External warehouse:
107000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
N-MOSFET | 100V | 20V | 7,4mOhm | 137A | 214W | SMD | -55°C ~ 175°C | TO263/3 | Infineon Technologies | |||||
Manufacturer:
Infineon Manufacturer part number: IPB042N10N3GATMA1 Case style: TO263/3 |
External warehouse:
14000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
N-MOSFET | 100V | 20V | 7,4mOhm | 137A | 214W | SMD | -55°C ~ 175°C | TO263/3 | Infineon Technologies | |||||
IPB050N10NF2SATMA1 Infineon Technologies
TRENCH >=100V Transistors - FETs, MOSFETs - Single
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Manufacturer:
Infineon Manufacturer part number: IPB050N10NF2SATMA1 Case style: |
External warehouse:
800 pcs. |
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Packaging: 800 Minimum order amount must exceed 20 Euro. |
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IPB054N08N3G
Trans MOSFET N-CH 80V 80A Automotive IPB054N08N3GATMA1
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Manufacturer:
Infineon Manufacturer part number: IPB054N08N3GATMA1 Case style: D2PAK |
External warehouse:
14000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB060N15N5
MOSFET N-CH 150V 136A TO263-7 IPB060N15N5ATMA1
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Manufacturer:
Infineon Manufacturer part number: IPB060N15N5ATMA1 Case style: |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB108N15N3G
MOSFET N-CH 150V 83A TO263-3 IPB108N15N3GATMA1
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Manufacturer:
Infineon Manufacturer part number: IPB108N15N3GATMA1 Case style: |
External warehouse:
3000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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Manufacturer:
Infineon Manufacturer part number: IPB108N15N3GATMA1 Case style: |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB123N10N3G INFINEON
N-MOSFET 100V 58A 94W 12.3mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB123N10N3GATMA1 Case style: TO263/3 |
External warehouse:
2000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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Manufacturer:
Infineon Manufacturer part number: IPB123N10N3GATMA1 Case style: TO263/3 |
External warehouse:
5000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB156N22NFD
N-Channel 220V 72A (Tc) 300W (Tc) Surface Mount PG-TO263-3 IPB156N22NFDATMA1
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Manufacturer:
Infineon Manufacturer part number: IPB156N22NFDATMA1 Case style: TO263/3 |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB160N04S4H1 Infineon
N-MOSFET 40V 160A 167W 1.6mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB160N04S4H1ATMA1 Case style: TO263/7 |
External warehouse:
10000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB180N10S402 INFINEON
N-MOSFET 100V 180A 300W 2.5mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB180N10S402ATMA1 Case style: TO263/7 |
External warehouse:
2000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB180P04P4L02 Infineon
P-MOSFET 40V 180A 150W 2.4mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB180P04P4L02ATMA1 Case style: TO263/7 |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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Manufacturer:
Infineon Manufacturer part number: IPB180P04P4L02ATMA2 Case style: TO263/7 |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB200N15N3G Infineon
N-MOSFET 150V 50A 150W 20mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB200N15N3GATMA1 Case style: TO263/3 |
External warehouse:
4000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB200N25N3G Infineon
N-MOSFET 250V 64A 300W 20mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB200N25N3GATMA1 Case style: TO263/3 |
External warehouse:
111000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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Manufacturer:
Infineon Manufacturer part number: IPB200N25N3GATMA1 Case style: TO263/3 |
External warehouse:
2000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB320N20N3GATMA1
Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK
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Manufacturer:
Infineon Manufacturer part number: IPB320N20N3GATMA1 Case style: D2PAK |
External warehouse:
5000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB60R125CP
MOSFET N-CH 600V 25A TO263 IPB60R125CPATMA1
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Manufacturer:
Infineon Manufacturer part number: IPB60R125CPATMA1 Case style: |
External warehouse:
13000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB60R165CP Infineon
N-MOSFET 600V 21A 192W 165mΩ
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Manufacturer:
Infineon Manufacturer part number: IPB60R165CPATMA1 Case style: D2PAK |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPB65R065C7 Infineon
N-MOSFET 600V 7.3A 171mΩ 171W
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Manufacturer:
Infineon Manufacturer part number: IPB65R065C7ATMA2 Case style: TO263/3 |
External warehouse:
1000 pcs. |
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Packaging: 1000 Minimum order amount must exceed 20 Euro. |
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IPC313N10N3RX1SA2 Infineon Technologies
TRENCH >=100V transistors - fets, mosfets - single
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Manufacturer:
Infineon Manufacturer part number: IPC313N10N3RX1SA2 Case style: |
External warehouse:
46157 pcs. |
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Packaging: 1 Minimum order amount must exceed 20 Euro. |
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IPD025N06N Infineon
N-MOSFET 60V 90A 3W 2.5mΩ
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Manufacturer:
Infineon Manufacturer part number: IPD025N06NATMA1 Case style: TO252/3 (DPAK) |
External warehouse:
40000 pcs. |
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Packaging: 2500 Minimum order amount must exceed 20 Euro. |
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Manufacturer:
Infineon Manufacturer part number: IPD025N06NATMA1 Case style: TO252/3 (DPAK) |
External warehouse:
2500 pcs. |
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Packaging: 2500 Minimum order amount must exceed 20 Euro. |
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IPD031N06L3G Infineon
N-MOSFET 80V 100A 167W 3.1mΩ IPD031N06L3GATMA1
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Manufacturer:
Infineon Manufacturer part number: IPD031N06L3GATMA1 Case style: TO252/3 (DPAK) |
External warehouse:
2500 pcs. |
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Packaging: 2500 Minimum order amount must exceed 20 Euro. |
N-MOSFET | 60V | 20V | 5,2mOhm | 100A | 167W | SMD | -55°C ~ 175°C | TO252/3 (DPAK) | Infineon Technologies |
Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.