Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
|
Max. drain-source voltage
|
Max. drain-gate voltage
|
Max. gate-source Voltage
|
Open channel resistance
|
Max. drain current
|
Max. power loss
|
Mounting
|
Operating temperature (range)
|
Case
|
Manufacturer
|
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G70P04K
Transistor MOSFET; TO-252; P-Channel; NO ESD; -40V; -70A; 156W; -1.4V; 7mΩ; 9mΩ SUD50P04-08;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
SUD50P04-09L-E3
Single P-Channel MOSFET 40V 0.0094 Ohm
|
|||||||||||||
|
Item available on a request
|
||||||||||||
SUM90140E-GE3
Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK
|
|||||||||||||
|
Item available on a request
|
||||||||||||
SUP57N20-33-E3 VISHAY
Transistor; N-MOSFET; unipolar; 200V; 57A; 300W
|
|||||||||||||
N-MOSFET | 200V | 20V | 93mOhm | 57A | 300W | THT | -55°C ~ 175°C | TO220 | VISHAY | ||||
|
Item available on a request
|
||||||||||||
GT080N10T
Transistor MOSFET; TO-220; N-Channel; NO ESD; 100V; 70A; 100W; 1.5V; 6mΩ; 8mΩ SUP70090E;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TC6320TG-G
N/P-MOSFET 2A 200V 7/8Ω
|
|||||||||||||
N/P-MOSFET | SMD | -55°C ~ 150°C | SOP08 | MICROCHIP | |||||||||
|
Item available on a request
|
||||||||||||
TK100E08N1,S1X(S
Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TK110P10PL,RQ(S2
Mosfet, N-ch, 100V, 40A, TO-252
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TK25A60X,S5X(M
Silicon N-Channel MOS (DTMOSIV)
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TK40E06N1,S1X(S
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220 Magazine
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TPC8124 SOP8 TOSHIBA
Trans MOSFET P-CH Si 40V 12A 8-Pin SOP T/R TPC8124(TE12L,Q,M); TPC8124(TE12L,V); TPC8124(TE12L,V,M);
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TPH2R608NH,L1Q
Trans MOSFET N-CH Si 75V 168A 8-Pin SOP Advance TPH2R608NH,L1Q(M
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TPN8R903NL
Trans MOSFET N-CH Si 30V 37A 8-Pin TSON Advance T/R TPN8R903NL,LQ(S
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TSM1N60CP
N-MOSFET 1A 600V 50W RDS=8 TSM1N60LCP
|
|||||||||||||
N-MOSFET | 600V | 30V | 8Ohm | 1A | 50W | SMD | -55°C ~ 150°C | TO252 (DPACK) | TAI-SEM | ||||
|
Item available on a request
|
||||||||||||
TSM2301ACX RFG
P-Ch 20V 2,8A 0,7W 0,13R SOT23 TSM2301ACX ; TSM2301ACX RFG ; TSM2301ACX RF-VB;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TSM2301CX
Transistor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Substitute: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; LGE2301; TSM2301CX RF-VB;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
PT2301B SOT23(T/R) HT SEMI
ODPOWIEDNIK: TSM2301ACX RFG;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
TSM2302CX
Transistor N-MOSFET; 20V; 12V; 55mOhm; 4A; 1,56W; -55°C ~ 125°C; Substitute:TSM2302CX RFG;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-04-24
Quantity of pieces: 1000
|
||||||||||||
G2305
Transistor MOSFET; SOT-23; P-Channel; NO ESD; -20V; -4.8A; 1.7W; -0.7V; ; 45mΩ~52mΩ TSM650P02CXRFG;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
UJ4SC075006K4S
750V/6MOHM, SIC, STACKED CASCODE Transistors - FETs, MOSFETs - Single
|
|||||||||||||
|
Item available on a request
|
||||||||||||
UT6K3TCR DFN2020-8 ROHM
Transistor MOSFET Array Dual N-CH 30V 5.5A
|
|||||||||||||
|
Item available on a request
|
||||||||||||
YJD20N06A-F1-0000HF
N-CH MOSFET 60V 20A TO-252
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 2500
|
||||||||||||
YJL02N10A-F2-0000HF
N-CH MOSFET 100V 2A SOT-23-3L YJL02N10A; YJL02N10A-YAN;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech
N-CH MOSFET 60V 3A SOT-23-3L Odpowiednik 03N06 (Goford), RHK003N06FRAT146 (Rohm); YJL03N06A IS EOL; REPLACEMENT: YJL03N06C
|
|||||||||||||
|
Item available on a request
|
||||||||||||
YJL03N06C
YJL03N06A IS EOL; REPLACEMENT: YJL03N06C.
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 3000
|
||||||||||||
YJL05N04A-F2-0000HF
N-CH MOSFET 40V 5A SOT-23-3L YJL05N04A IS EOL; REPLACEMENT: YJL05N04C.
|
|||||||||||||
|
Item available on a request
|
||||||||||||
YJL05N04C
YJL05N04A IS EOL; REPLACEMENT: YJL05N04C.
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 3000
|
||||||||||||
YJM04N10A
Trans; N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 16A, 2.5W; +-20V; 0.12Oh YJM04N10A-YAN
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 2500
|
||||||||||||
ZVN4206GTC
Trans MOSFET N-CH 60V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R
|
|||||||||||||
|
Item available on a request
|
||||||||||||
ZXM61N02FTA
SOT-23-3 MOSFETs ROHS
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 5
|
Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.