Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
G70P04K Transistor MOSFET; TO-252; P-Channel; NO ESD; -40V; -70A; 156W; -1.4V; 7mΩ; 9mΩ SUD50P04-08;
G70P04K TO252
 
 
Item available on a request
                     
SUD50P04-09L-E3 Single P-Channel MOSFET 40V 0.0094 Ohm
SUD50P04-09L-E3 TO252
 
 
Item available on a request
                     
SUM90140E-GE3 Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK
SUM90140E-GE3 D2PAK
 
 
Item available on a request
                     
SUP57N20-33-E3 VISHAY Transistor; N-MOSFET; unipolar; 200V; 57A; 300W
SUP57N20-33-E3 VISHAY TO220
  N-MOSFET 200V 20V 93mOhm 57A 300W THT -55°C ~ 175°C TO220 VISHAY
 
Item available on a request
                     
GT080N10T Transistor MOSFET; TO-220; N-Channel; NO ESD; 100V; 70A; 100W; 1.5V; 6mΩ; 8mΩ SUP70090E;
GT080N10T TO220
 
 
Item available on a request
                     
TC6320TG-G N/P-MOSFET 2A 200V 7/8Ω
TC6320TG-G SOP08
  N/P-MOSFET SMD -55°C ~ 150°C SOP08 MICROCHIP
 
Item available on a request
                     
TK100E08N1,S1X(S Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220
TK100E08N1,S1X(S TO220
 
 
Item available on a request
                     
TK110P10PL,RQ(S2 Mosfet, N-ch, 100V, 40A, TO-252
TK110P10PL,RQ(S2 TO252
 
 
Item available on a request
                     
TK25A60X,S5X(M Silicon N-Channel MOS (DTMOSIV)
TK25A60X,S5X(M  
 
 
Item available on a request
                     
TK40E06N1,S1X(S Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220 Magazine
TK40E06N1,S1X(S TO220
 
 
Item available on a request
                     
TPC8124 SOP8 TOSHIBA Trans MOSFET P-CH Si 40V 12A 8-Pin SOP T/R TPC8124(TE12L,Q,M); TPC8124(TE12L,V); TPC8124(TE12L,V,M);
TPC8124 SOP8 TOSHIBA SOP08
 
 
Item available on a request
                     
TPH2R608NH,L1Q Trans MOSFET N-CH Si 75V 168A 8-Pin SOP Advance TPH2R608NH,L1Q(M
TPH2R608NH,L1Q SOP08
 
 
Item available on a request
                     
TPN8R903NL Trans MOSFET N-CH Si 30V 37A 8-Pin TSON Advance T/R TPN8R903NL,LQ(S
TPN8R903NL  
 
 
Item available on a request
                     
TSM1N60CP N-MOSFET 1A 600V 50W RDS=8 TSM1N60LCP
TSM1N60CP TO252 (DPACK)
  N-MOSFET 600V 30V 8Ohm 1A 50W SMD -55°C ~ 150°C TO252 (DPACK) TAI-SEM
 
Item available on a request
                     
TSM2301ACX RFG P-Ch 20V 2,8A 0,7W 0,13R SOT23 TSM2301ACX ; TSM2301ACX RFG ; TSM2301ACX RF-VB;
TSM2301ACX RFG SOT23
 
 
Item available on a request
                     
TSM2301CX Transistor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Substitute: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; LGE2301; TSM2301CX RF-VB;
TSM2301CX SOT23
 
 
Item available on a request
                     
PT2301B SOT23(T/R) HT SEMI ODPOWIEDNIK: TSM2301ACX RFG;
PT2301B SOT23(T/R) HT SEMI SOT23
 
 
Item available on a request
                     
TSM2302CX Transistor N-MOSFET; 20V; 12V; 55mOhm; 4A; 1,56W; -55°C ~ 125°C; Substitute:TSM2302CX RFG;
TSM2302CX SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-24
Quantity of pieces: 1000
                     
G2305 Transistor MOSFET; SOT-23; P-Channel; NO ESD; -20V; -4.8A; 1.7W; -0.7V; ; 45mΩ~52mΩ TSM650P02CXRFG;
G2305 SOT23
 
 
Item available on a request
                     
UJ4SC075006K4S 750V/6MOHM, SIC, STACKED CASCODE Transistors - FETs, MOSFETs - Single
UJ4SC075006K4S  
 
 
Item available on a request
                     
UT6K3TCR DFN2020-8 ROHM Transistor MOSFET Array Dual N-CH 30V 5.5A
UT6K3TCR DFN2020-8 ROHM DFN08
 
 
Item available on a request
                     
YJD20N06A-F1-0000HF N-CH MOSFET 60V 20A TO-252
YJD20N06A-F1-0000HF TO252
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 2500
                     
YJL02N10A-F2-0000HF N-CH MOSFET 100V 2A SOT-23-3L YJL02N10A; YJL02N10A-YAN;
YJL02N10A-F2-0000HF SOT23
 
 
Item available on a request
                     
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech N-CH MOSFET 60V 3A SOT-23-3L Odpowiednik 03N06 (Goford), RHK003N06FRAT146 (Rohm); YJL03N06A IS EOL; REPLACEMENT: YJL03N06C
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech SOT23-3
 
 
Item available on a request
                     
YJL03N06C YJL03N06A IS EOL; REPLACEMENT: YJL03N06C.
YJL03N06C SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 3000
                     
YJL05N04A-F2-0000HF N-CH MOSFET 40V 5A SOT-23-3L YJL05N04A IS EOL; REPLACEMENT: YJL05N04C.
YJL05N04A-F2-0000HF SOT23
 
 
Item available on a request
                     
YJL05N04C YJL05N04A IS EOL; REPLACEMENT: YJL05N04C.
YJL05N04C SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 3000
                     
YJM04N10A Trans; N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 16A, 2.5W; +-20V; 0.12Oh YJM04N10A-YAN
YJM04N10A SOT223
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 2500
                     
ZVN4206GTC Trans MOSFET N-CH 60V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R
ZVN4206GTC  
 
 
Item available on a request
                     
ZXM61N02FTA SOT-23-3 MOSFETs ROHS
ZXM61N02FTA SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 5
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.