Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
IRLML5103 SOT23 SOT23
 
 
Item available on a request
                     
IRLML5203 SOT23 SOT23
 
 
Item available on a request
                     
IRLML6244 SOT23 Transistor N-MOSFET; 20V; 12V; 27mOhm; 6,3A; 1,3W; -55°C ~ 150°C; Odpowiednik: IRLML6244TRPBF; IRLML6244PBF; IRLML6244; IRLML6244TR; IRLML6244TRPBF; IRLML6244TRPBF-HXY; YFW3416;
IRLML6244 SOT23 SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-28
Quantity of pieces: 3000
                     
2300F Transistor MOSFET; SOT-23; N-Channel; NO ESD; 20V; 6A; 1.25W; 0.65V; ; 20mΩ~27mΩ AO3414; IRLML6244
2300F SOT23
 
 
Item available on a request
                     
IRLML6246 SOT23 SOT23
 
 
Item available on a request
                     
IRLML6302 SOT23 SOT23
 
 
Item available on a request
                     
IRLML6346 SOT23 SOT23
 
 
Item available on a request
                     
BML6401 BORN SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
                     
IRLML6402 Yangjie P-Channel MOSFET -3A -20V 120mΩ Substitute: IRLML6402 , SKML6402
IRLML6402 Yangjie SOT23
                         
Item available on a request
P-MOSFET 20V 10V 75mOhm 5,4A 1,2W SMD -55°C ~ 150°C SOT23 YY
                           
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 3000
                     
FS2301S Transistor P-Channel MOSFET; 20V; 12V; 95mOhm; 3,6A; 1,7W; -55°C~150°C; FS2301S; IRLML6402; FS2301S;
FS2301S SOT23
  P-MOSFET 20V 12V 95mOhm 3,6A 1,7W SMD -55°C ~ 150°C SOT23 FUXINSEMI
 
Item available on a request
                     
IRLML6402 (SKML6402) SHIKUES Transistor P-Channel MOSFET; 20V; 10V; 150mOhm; 3A; Equivalent: IRLML6402TRPBF; IRLML6402GTRPBF; SP001552740; SP001578888;
IRLML6402 (SKML6402) SHIKUES SOT23
  P-MOSFET 20V 10V 150mOhm 3A SMD SOT23 SHIKUES
 
Item available on a request
                     
IRLML6402 Transistor P-MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Substitute: IRLML6402TRPBF; IRLML6402PBF;
IRLML6402 SOT23
  P-MOSFET 20V 12V 135mOhm 3,7A 1,3W SMD -55°C ~ 150°C SOT23 TECH PUBLIC
 
Item available on a request
                     
IRLML9301 SOT23 SOT23
 
 
Item available on a request
                     
IRLML9303 SOT23 SOT23
 
 
Item available on a request
                     
IRLR120N TO-252 100V 10A 0.265?@4V,5A 48W 2V 1 N-channel DPAK MOSFETs ROHS VBSEMI IRLR120NTRPBF-VB; IRLR120NTRPBF;
IRLR120N TO-252 TO252 (DPACK)
 
 
Item available on a request
                     
IRLR2905 DPAK Transistor N-Channel MOSFET; 60V; 20V; 38mOhm; 30A; 34,7W; -55°C ~ 150°C; Substitute: IRLR2905PBF; IRLR2905TRLPBF; IRLR2905TRPBF; IRLR2905TRRPBF; SP0015;
IRLR2905 DPAK TO252 (DPACK)
  N-MOSFET 60V 20V 38mOhm 30A 34,7W SMD -55°C ~ 150°C TO252 (DPACK)
 
Item available on a request
                     
IRLR2905TRPBF-ML MOSLEADER Transistor N-Channel MOSFET; 60V; 20V; 20mOhm; 50A; 45W; -55°C ~ 150°C; Equivalent: IRLR2905PBF; IRLR2905TRLPBF; IRLR2905TRPBF; IRLR2905TRRPBF; SP001572902; SP001569030; SP001558410; SP001558420
IRLR2905TRPBF-ML MOSLEADER TO252 (DPACK)
  N-MOSFET 60V 20V 20mOhm 50A 45W SMD -55°C ~ 150°C TO252 (DPACK) MOSLEADER
 
Item available on a request
                     
IRLR3717 Tranzystor N-MOSFET; 20V; 20V; 5,5mOhm; 120A; 89W; -55°C ~ 175°C; Odpowiednik: IRLR3717TRPBF-VB; IRLR3717PBF; IRLR3717TRPBF; IRLR3717TRRPBF;
IRLR3717 TO252 (DPACK)
  N-MOSFET 20V 20V 5,5mOhm 120A 89W SMD -55°C ~ 175°C TO252 (DPACK) VBsemi
 
Item available on a request
                     
IRLR8729TR TO-252 MOSFETs ROHS
IRLR8729TR TO252
 
 
Item available on a request
                     
G80N03K Transistor MOSFET; TO-252; N-Channel; NO ESD; 30V; 80A; 69W; 1.6V; 3.5mΩ; 5mΩ AOD4132; IRLR8743PbF
G80N03K TO252
 
 
Item available on a request
                     
IRLU3705Z N-MOSFET HEXFET 42A 55V 130W 0.08Ω obsolete
IRLU3705Z TO251 (IPACK)
  N-MOSFET 55V 16V 12mOhm 89A 130W THT -55°C ~ 175°C TO251 (IPACK) Infineon (IRF)
 
Item available on a request
                     
IRLZ44ZPBF Tranzystor N-MOSFET; 55V; 16V; 22,5mOhm; 51A; 80W; -55°C ~ 175°C; Odpowiednik: IRLZ44ZPBF; IRLZ44ZLPBF; IRLZ44Z;
IRLZ44ZPBF TO220
  N-MOSFET 55V 16V 22,5mOhm 51A 80W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRLZ44ZS smd N-MOSFET 51A 55V 80W 0.0135Ω
IRLZ44ZS smd TO263 (D2PAK)
  N-MOSFET 55V 16V 22,5mOhm 51A 80W SMD -55°C ~ 175°C TO263 (D2PAK) Infineon (IRF)
 
Item available on a request
                     
G04P10HE Transistor MOSFET; SOT-223; P-Channel; YES ESD; -100V; -4A; 1.2W; -1.55V; 177mΩ; 190mΩ ISP16DP10LM;
G04P10HE SOT223
 
 
Item available on a request
                     
IXFZ520N075T2 Trans MOSFET N-CH 75V 465A 6-Pin Case DE-475
IXFZ520N075T2  
 
 
Item available on a request
                     
IXTH120P065T Single P-Channel 65 V 10 mOhm 185 nC 298 W Silicon Flange Mount Mosfet
IXTH120P065T TO247
 
 
Item available on a request
                     
IXTQ22N50P Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P
IXTQ22N50P TO 3P
 
 
Item available on a request
                     
LND150N8-G Microchip N-MOSFET 500V 30mA 1.6W 1000Ω
LND150N8-G Microchip SOT89
  N-MOSFET 500V 20V 1000Ohm 30mA 1,6W SMD -55°C ~ 150°C SOT89 Supertex
 
Item available on a request
                     
MMBF5458 ON Semiconductor Trans JFET N-CH 25V 3-Pin SOT-23 T/R
MMBF5458 ON Semiconductor SOT23
 
 
Item available on a request
                     
MMFTN6001 MOSFET, SOT-23, 60V, 0.440A, N, ODPOWIEDNIK: MMFTN6001-DIO;
MMFTN6001 SOT23
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.