Unipolar Transistors (results: 5467)
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Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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IRLML6244 SOT23
Transistor N-MOSFET; 20V; 12V; 27mOhm; 6,3A; 1,3W; -55°C ~ 150°C; Odpowiednik: IRLML6244TRPBF; IRLML6244PBF; IRLML6244; IRLML6244TR; IRLML6244TRPBF; IRLML6244TRPBF-HXY; YFW3416;
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Item in delivery
Estimated time: 2025-04-28
Quantity of pieces: 3000
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2300F
Transistor MOSFET; SOT-23; N-Channel; NO ESD; 20V; 6A; 1.25W; 0.65V; ; 20mΩ~27mΩ AO3414; IRLML6244
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Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
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IRLML6402 Yangjie
P-Channel MOSFET -3A -20V 120mΩ Substitute: IRLML6402 , SKML6402
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P-MOSFET | 20V | 10V | 75mOhm | 5,4A | 1,2W | SMD | -55°C ~ 150°C | SOT23 | YY | ||
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Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 3000
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FS2301S
Transistor P-Channel MOSFET; 20V; 12V; 95mOhm; 3,6A; 1,7W; -55°C~150°C; FS2301S; IRLML6402; FS2301S;
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P-MOSFET | 20V | 12V | 95mOhm | 3,6A | 1,7W | SMD | -55°C ~ 150°C | SOT23 | FUXINSEMI | ||||
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IRLML6402 (SKML6402) SHIKUES
Transistor P-Channel MOSFET; 20V; 10V; 150mOhm; 3A; Equivalent: IRLML6402TRPBF; IRLML6402GTRPBF; SP001552740; SP001578888;
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P-MOSFET | 20V | 10V | 150mOhm | 3A | SMD | SOT23 | SHIKUES | ||||||
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IRLML6402
Transistor P-MOSFET; 20V; 12V; 135mOhm; 3,7A; 1,3W; -55°C ~ 150°C; Substitute: IRLML6402TRPBF; IRLML6402PBF;
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P-MOSFET | 20V | 12V | 135mOhm | 3,7A | 1,3W | SMD | -55°C ~ 150°C | SOT23 | TECH PUBLIC | ||||
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IRLR120N TO-252
100V 10A 0.265?@4V,5A 48W 2V 1 N-channel DPAK MOSFETs ROHS VBSEMI IRLR120NTRPBF-VB; IRLR120NTRPBF;
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IRLR2905 DPAK
Transistor N-Channel MOSFET; 60V; 20V; 38mOhm; 30A; 34,7W; -55°C ~ 150°C; Substitute: IRLR2905PBF; IRLR2905TRLPBF; IRLR2905TRPBF; IRLR2905TRRPBF; SP0015;
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N-MOSFET | 60V | 20V | 38mOhm | 30A | 34,7W | SMD | -55°C ~ 150°C | TO252 (DPACK) | |||||
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IRLR2905TRPBF-ML MOSLEADER
Transistor N-Channel MOSFET; 60V; 20V; 20mOhm; 50A; 45W; -55°C ~ 150°C; Equivalent: IRLR2905PBF; IRLR2905TRLPBF; IRLR2905TRPBF; IRLR2905TRRPBF; SP001572902; SP001569030; SP001558410; SP001558420
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N-MOSFET | 60V | 20V | 20mOhm | 50A | 45W | SMD | -55°C ~ 150°C | TO252 (DPACK) | MOSLEADER | ||||
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IRLR3717
Tranzystor N-MOSFET; 20V; 20V; 5,5mOhm; 120A; 89W; -55°C ~ 175°C; Odpowiednik: IRLR3717TRPBF-VB; IRLR3717PBF; IRLR3717TRPBF; IRLR3717TRRPBF;
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N-MOSFET | 20V | 20V | 5,5mOhm | 120A | 89W | SMD | -55°C ~ 175°C | TO252 (DPACK) | VBsemi | ||||
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IRLR8729TR
TO-252 MOSFETs ROHS
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G80N03K
Transistor MOSFET; TO-252; N-Channel; NO ESD; 30V; 80A; 69W; 1.6V; 3.5mΩ; 5mΩ AOD4132; IRLR8743PbF
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IRLU3705Z
N-MOSFET HEXFET 42A 55V 130W 0.08Ω obsolete
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N-MOSFET | 55V | 16V | 12mOhm | 89A | 130W | THT | -55°C ~ 175°C | TO251 (IPACK) | Infineon (IRF) | ||||
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IRLZ44ZPBF
Tranzystor N-MOSFET; 55V; 16V; 22,5mOhm; 51A; 80W; -55°C ~ 175°C; Odpowiednik: IRLZ44ZPBF; IRLZ44ZLPBF; IRLZ44Z;
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N-MOSFET | 55V | 16V | 22,5mOhm | 51A | 80W | THT | -55°C ~ 175°C | TO220 | Infineon (IRF) | ||||
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IRLZ44ZS smd
N-MOSFET 51A 55V 80W 0.0135Ω
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N-MOSFET | 55V | 16V | 22,5mOhm | 51A | 80W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | Infineon (IRF) | ||||
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G04P10HE
Transistor MOSFET; SOT-223; P-Channel; YES ESD; -100V; -4A; 1.2W; -1.55V; 177mΩ; 190mΩ ISP16DP10LM;
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IXFZ520N075T2
Trans MOSFET N-CH 75V 465A 6-Pin Case DE-475
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IXTH120P065T
Single P-Channel 65 V 10 mOhm 185 nC 298 W Silicon Flange Mount Mosfet
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IXTQ22N50P
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P
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LND150N8-G Microchip
N-MOSFET 500V 30mA 1.6W 1000Ω
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N-MOSFET | 500V | 20V | 1000Ohm | 30mA | 1,6W | SMD | -55°C ~ 150°C | SOT89 | Supertex | ||||
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MMBF5458 ON Semiconductor
Trans JFET N-CH 25V 3-Pin SOT-23 T/R
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MMFTN6001
MOSFET, SOT-23, 60V, 0.440A, N, ODPOWIEDNIK: MMFTN6001-DIO;
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.