Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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PSMN4R0-60YS,115 NEXPERIA
Trans MOSFET N-CH 60V 74A 5-Pin(4+Tab) LFPAK
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Item available on a request
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PSMN4R2-80YSEX Nexperia USA Inc.
PSMN4R2-80YSE/SOT1023/4 LEADS Transistors - FETs, MOSFETs - Single
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Item available on a request
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PSMNR55-40SSHJ Nexperia USA Inc.
PSMNR55-40SSH/SOT1235/LFPAK88 transistors - fets, mosfets - single
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Item available on a request
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PTL03N10 SOT-23
Trans MOSFET N-CH 100V 2.6A SOT-23 Odpowiednik: AOSS62934; FDN8601;
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Item available on a request
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PTQ6002 PDFN3333 (=SIS438DN-T1-GE3)
Podobny do SIS438DN-T1-GE3; (PTQ6002 RDS smaller)
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Item available on a request
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R6015KNX Rohm Semiconductor
NCH 600V 15A POWER MOSFET TO-220-3 Full Pack
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N-MOSFET | 600V | 30V | 290mOhm | 15A | 60W | THT | -55°C ~ 150°C | TO220FP | ROHM | ||||
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Item available on a request
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RD01MUS2B-T113
Transistor Mitsubishi
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N-MOSFET | 25V | 10V | 600mA | 3,6W | SMD | -40°C ~ 125°C | SOT89 | Mitsubishi Electric | |||||
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Item available on a request
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RFD14N05L
N-MOSFET 14A 50V 48W 0.1Ω
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N-MOSFET | 50V | 50V | 10V | 100mOhm | 14A | 48W | THT | -55°C ~ 175°C | TO251 (IPACK) | ON SEMICONDUCTOR | |||
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Item available on a request
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RQ3E100BNTB Rohm Semiconductor
MOSFET N-CH 30V 10A HSMT8 8-PowerVDFN
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Item available on a request
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RV8C010UNHZGG2CR 3-Pin DFN-W ROHM
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN-W
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Item available on a request
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RV8L002SNHZGG2CR DFN1010-3W ROHM
N-Channel 60 V 250mA (Ta) 1W (Ta) Surface Mount DFN1010-3W
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Item available on a request
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SI1330EDL-T1-E3 VISHAY
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70
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Item available on a request
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SI1902DL-T1-E3
2N-MOSFET 20V 660mA 270mW
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2xN-MOSFET | 20V | 12V | 630mOhm | 660mA | 270mW | SMD | -55°C ~ 150°C | SC70-6 | VISHAY | ||||
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Item available on a request
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TPM2301LS3 SOT23
SI2301; YFW2301B; TPM2301LS3;
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Item available on a request
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KSI2302CDS-T1-GE3 KUU
Tranzystor N-MOSFET; 20V; 10V; 59mOhm; 2,9A; 1W; -55°C ~ 150°C; KSI2302CDS-T1-GE3;
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N-MOSFET | 20V | 10V | 59mOhm | 2,9A | 1W | SMD | -55°C ~ 150°C | SOT23 | KUU | ||||
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Item available on a request
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G29
Transistor MOSFET; SOT-23; P-Channel; NO ESD; -15V; -4.1A; 1.05W; -0.55V; ; 24mΩ SI2305-TP;
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Item available on a request
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SI2306-TP
Transistor N-Channel MOSFET; 30V; 20V; 65mOhm; 20A; 620mW; -55°C~150°C;
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N-MOSFET | 30V | 20V | 65mOhm | 20A | 620mW | SMD | -55°C ~ 150°C | SOT23 | MCC | ||||
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Item available on a request
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G05P06L
Transistor P-MOSFET; 60V; 20V; 450mOhm; 1,6A; 1,7W; -55°C ~ 150°C; Substitute: SI2309CDS-T1-GE3; SI2309CDS-T1-E3;
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Item available on a request
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SI2329DS-T1-GE3 VISHAY
Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23
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Item available on a request
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SI2342DS Vishay
N-MOSFET 8V 6A 17mΩ 2.5W
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N-MOSFET | 8V | 5V | 17mOhm | 6A | 2,5W | SMD | -55°C ~ 150°C | SOT23 | VISHAY | ||||
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Item available on a request
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SI2392ADS-T1-GE3 VISHAY
Trans MOSFET N-CH 100V 2.2A 3-Pin TO-236
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Item available on a request
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SI2399DS
P-MOSFET 5.1A 20V 1.25W 0.034Ω
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P-MOSFET | |||||||||||||
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Item available on a request
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AS3401
Transistor P-Channel MOSFET; 30V; 12V; 96mOhm; 4,4A; 1,2W; -55°C~150°C;
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P-MOSFET | 30V | 12V | 96mOhm | 4,4A | 1,2W | SMD | -55°C ~ 150°C | SOT23 | AnBon | ||||
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Item available on a request
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LGE3415ES
P-CHANNEL MOSFET, SOT-23 Substitute: SI3415B-TP;
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P-MOSFET | -20V | 10V | 50mOhm | -4A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | LGE | ||||
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Item available on a request
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SI3483DDV-T1-GE3
P-CHANNEL 30-V (D-S) MOSFET TSOP Transistors - FETs, MOSFETs - Single
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Item available on a request
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SI3900DV
Trans MOSFET N-CH 20V 2A 6-Pin TSOP Subsitute: SI3900DV-T1-E3; SI3900DV-T1; SI3900DV;
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2xN-MOSFET | 20V | 12V | 200mOhm | 2A | 830mW | SMD | -55°C ~ 150°C | TSOP06 | VISHAY | ||||
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Item available on a request
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SI4143DY-T1-GE3 VISHAY
Trans MOSFET P-CH 30V 17.7A 8-Pin SOIC N
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Item available on a request
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SI4410BDY-T1-E3
N-MOSFET 7,5A 30V 1,4W
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N-MOSFET | 30V | 20V | 20mOhm | 7,5A | 1,4W | SMD | -55°C ~ 150°C | SOP08 | VISHAY | ||||
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Item available on a request
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SI4410DY
N-MOSFET 10A 30V 2.5W 0.0135Ω
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N-MOSFET | 30V | 20V | 20mOhm | 10A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | International Rectifier | ||||
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Item available on a request
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SI4435BDY
P-MOSFET -9.1A -30V 2.5W 0.02Ohm;
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P-MOSFET | -30V | 20V | 20mOhm | -9,1A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | VISHAY | ||||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.