Unipolar Transistors (results: 5467)

1    175  176  177  178  179  180  181  182  183    183
Product Cart
Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
PSMN4R0-60YS,115 NEXPERIA Trans MOSFET N-CH 60V 74A 5-Pin(4+Tab) LFPAK
PSMN4R0-60YS,115 NEXPERIA  
 
 
Item available on a request
                     
PSMN4R2-80YSEX Nexperia USA Inc. PSMN4R2-80YSE/SOT1023/4 LEADS Transistors - FETs, MOSFETs - Single
PSMN4R2-80YSEX Nexperia USA Inc. LFPAK56 (SOT669)
 
 
Item available on a request
                     
PSMNR55-40SSHJ Nexperia USA Inc. PSMNR55-40SSH/SOT1235/LFPAK88 transistors - fets, mosfets - single
PSMNR55-40SSHJ Nexperia USA Inc.  
 
 
Item available on a request
                     
PTL03N10 SOT-23 Trans MOSFET N-CH 100V 2.6A SOT-23 Odpowiednik: AOSS62934; FDN8601;
PTL03N10 SOT-23 SOT23
 
 
Item available on a request
                     
PTQ6002 PDFN3333 (=SIS438DN-T1-GE3) Podobny do SIS438DN-T1-GE3; (PTQ6002 RDS smaller)
PTQ6002 PDFN3333 (=SIS438DN-T1-GE3)  
 
 
Item available on a request
                     
R6015KNX Rohm Semiconductor NCH 600V 15A POWER MOSFET TO-220-3 Full Pack
R6015KNX Rohm Semiconductor TO220FP
  N-MOSFET 600V 30V 290mOhm 15A 60W THT -55°C ~ 150°C TO220FP ROHM
 
Item available on a request
                     
RD01MUS2B-T113 Transistor Mitsubishi
RD01MUS2B-T113 SOT89
  N-MOSFET 25V 10V 600mA 3,6W SMD -40°C ~ 125°C SOT89 Mitsubishi Electric
 
Item available on a request
                     
RFD14N05L N-MOSFET 14A 50V 48W 0.1Ω
RFD14N05L TO251 (IPACK)
  N-MOSFET 50V 50V 10V 100mOhm 14A 48W THT -55°C ~ 175°C TO251 (IPACK) ON SEMICONDUCTOR
 
Item available on a request
                     
RQ3E100BNTB Rohm Semiconductor MOSFET N-CH 30V 10A HSMT8 8-PowerVDFN
RQ3E100BNTB Rohm Semiconductor HSMT8 (3.2x3)
 
 
Item available on a request
                     
RV8C010UNHZGG2CR 3-Pin DFN-W ROHM Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN-W
RV8C010UNHZGG2CR 3-Pin DFN-W ROHM SOT883
 
 
Item available on a request
                     
RV8L002SNHZGG2CR DFN1010-3W ROHM N-Channel 60 V 250mA (Ta) 1W (Ta) Surface Mount DFN1010-3W
RV8L002SNHZGG2CR DFN1010-3W ROHM DFN1010-3W
 
 
Item available on a request
                     
SI1330EDL-T1-E3 VISHAY Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70
SI1330EDL-T1-E3 VISHAY SC70-3
 
 
Item available on a request
                     
SI1902DL-T1-E3 2N-MOSFET 20V 660mA 270mW
SI1902DL-T1-E3 SC70-6
  2xN-MOSFET 20V 12V 630mOhm 660mA 270mW SMD -55°C ~ 150°C SC70-6 VISHAY
 
Item available on a request
                     
TPM2301LS3 SOT23 SI2301; YFW2301B; TPM2301LS3;
TPM2301LS3 SOT23 SOT23
 
 
Item available on a request
                     
KSI2302CDS-T1-GE3 KUU Tranzystor N-MOSFET; 20V; 10V; 59mOhm; 2,9A; 1W; -55°C ~ 150°C; KSI2302CDS-T1-GE3;
KSI2302CDS-T1-GE3 KUU SOT23
  N-MOSFET 20V 10V 59mOhm 2,9A 1W SMD -55°C ~ 150°C SOT23 KUU
 
Item available on a request
                     
G29 Transistor MOSFET; SOT-23; P-Channel; NO ESD; -15V; -4.1A; 1.05W; -0.55V; ; 24mΩ SI2305-TP;
G29 SOT23
 
 
Item available on a request
                     
SI2306-TP Transistor N-Channel MOSFET; 30V; 20V; 65mOhm; 20A; 620mW; -55°C~150°C;
SI2306-TP SOT23
  N-MOSFET 30V 20V 65mOhm 20A 620mW SMD -55°C ~ 150°C SOT23 MCC
 
Item available on a request
                     
G05P06L Transistor P-MOSFET; 60V; 20V; 450mOhm; 1,6A; 1,7W; -55°C ~ 150°C; Substitute: SI2309CDS-T1-GE3; SI2309CDS-T1-E3;
G05P06L SOT23
 
 
Item available on a request
                     
SI2329DS-T1-GE3 VISHAY Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23
SI2329DS-T1-GE3 VISHAY  
 
 
Item available on a request
                     
SI2342DS Vishay N-MOSFET 8V 6A 17mΩ 2.5W
SI2342DS Vishay SOT23
  N-MOSFET 8V 5V 17mOhm 6A 2,5W SMD -55°C ~ 150°C SOT23 VISHAY
 
Item available on a request
                     
SI2392ADS-T1-GE3 VISHAY Trans MOSFET N-CH 100V 2.2A 3-Pin TO-236
SI2392ADS-T1-GE3 VISHAY  
 
 
Item available on a request
                     
SI2399DS P-MOSFET 5.1A 20V 1.25W 0.034Ω
SI2399DS SOT23
  P-MOSFET
 
Item available on a request
                     
AS3401 Transistor P-Channel MOSFET; 30V; 12V; 96mOhm; 4,4A; 1,2W; -55°C~150°C;
AS3401 SOT23
  P-MOSFET 30V 12V 96mOhm 4,4A 1,2W SMD -55°C ~ 150°C SOT23 AnBon
 
Item available on a request
                     
LGE3415ES P-CHANNEL MOSFET, SOT-23 Substitute: SI3415B-TP;
LGE3415ES SOT23
  P-MOSFET -20V 10V 50mOhm -4A 1,4W SMD -55°C ~ 150°C SOT23 LGE
 
Item available on a request
                     
SI3483DDV-T1-GE3 P-CHANNEL 30-V (D-S) MOSFET TSOP Transistors - FETs, MOSFETs - Single
SI3483DDV-T1-GE3 TSOP06
 
 
Item available on a request
                     
SI3900DV Trans MOSFET N-CH 20V 2A 6-Pin TSOP Subsitute: SI3900DV-T1-E3; SI3900DV-T1; SI3900DV;
SI3900DV TSOP06
  2xN-MOSFET 20V 12V 200mOhm 2A 830mW SMD -55°C ~ 150°C TSOP06 VISHAY
 
Item available on a request
                     
SI4143DY-T1-GE3 VISHAY Trans MOSFET P-CH 30V 17.7A 8-Pin SOIC N
SI4143DY-T1-GE3 VISHAY SOP08
 
 
Item available on a request
                     
SI4410BDY-T1-E3 N-MOSFET 7,5A 30V 1,4W
SI4410BDY-T1-E3 SOP08
  N-MOSFET 30V 20V 20mOhm 7,5A 1,4W SMD -55°C ~ 150°C SOP08 VISHAY
 
Item available on a request
                     
SI4410DY N-MOSFET 10A 30V 2.5W 0.0135Ω
SI4410DY SOP08
  N-MOSFET 30V 20V 20mOhm 10A 2,5W SMD -55°C ~ 150°C SOP08 International Rectifier
 
Item available on a request
                     
SI4435BDY P-MOSFET -9.1A -30V 2.5W 0.02Ohm;
SI4435BDY SOP08
  P-MOSFET -30V 20V 20mOhm -9,1A 2,5W SMD -55°C ~ 150°C SOP08 VISHAY
 
Item available on a request
                     
1    175  176  177  178  179  180  181  182  183    183

Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.