Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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MMFTP3401 DIOTEC
Trans MOSFET P-CH 30V 4A 3-Pin SOT-23 ODPOWIEDNIK: MMFTP3401-DIO;
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Item available on a request
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MSJPF11N65-BP
N-CHANNEL MOSFET, TO-220F PACKAG Transistors - FETs, MOSFETs - Single
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Item available on a request
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MTD3055VL
Logic N-MOSFET 12A 60V 48W 0.18Ω
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N-MOSFET | 60V | 60V | 15V | 180mOhm | 12A | 48W | SMD | -55°C ~ 175°C | TO252 (DPACK) | ON SEMICONDUCTOR | |||
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Item available on a request
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NDT456P SOT223
P-MOSFET 30V 7.5A 1.1W
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P-MOSFET | 30V | 20V | 54mOhm | 7,5A | 3W | SMD | -65°C ~ 150°C | SOT223 | ON SEMICONDUCTOR | ||||
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Item available on a request
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NTD25P03LG DPAK UMW
NTD25P03LG(UMW); NTD25P03LG-HXY; NTD25P03LG-VB;
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Item available on a request
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NTD2955-1G
P-MOSFET 12A 60V 55W NTD2955T4G, NTD2955G
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P-MOSFET | 60V | 20V | 180mOhm | 12A | 55W | THT | -55°C ~ 175°C | TO251 (IPACK) | ON SEMICONDUCTOR | ||||
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Item available on a request
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NTD5862NT4G
Trans MOSFET N-CH 60V 98A 3-Pin(2+Tab) DPAK
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Item available on a request
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Item available on a request
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NTD5867NLT4G
Tranzystor N-MOSFET; 60V; 20V; 50mOhm; 20A; 36W; -55°C ~ 150°C; OBSOLETE;
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N-MOSFET | 60V | 20V | 50mOhm | 20A | 36W | SMD | -55°C ~ 150°C | TO252 (DPACK) | ON SEMICONDUCTOR | ||||
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Item available on a request
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NTLUS3A18PZTAG
P-MOSFET 20V 8.2A 18mΩ 700mW Tranz. NTLUS3A18PZTAG UDFN06
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P-MOSFET | -20V | 8V | 18mOhm | -8,2A | 700mW | SMD | -55°C ~ 150°C | UDFN6 | ON SEMICONDUCTOR | ||||
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Item available on a request
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G33N03D52
Transistor MOSFET; DFN5*6-8L; DUAL; N+N-Channel; NO ESD; 30V; 33A; 29W; 1.85V; 8mΩ; 26mΩ NTMFD4C20NT1G; NTMFD4C20NT3G
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Item available on a request
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10N65
Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F 10N65-LGE
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Item available on a request
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NVBG015N065SC1 onsemi
SIC MOS D2PAK-7L 650V Transistors - FETs, MOSFETs - Single
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Item available on a request
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NVD5C648NLT4G
Trans MOSFET Single N-Channel Power; 60V; 18A; Automotive;
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Item available on a request
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NVH4L015N065SC1 onsemi
SIC MOS TO247-4L 650V Transistors - FETs, MOSFETs - Single
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Item available on a request
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NVMFS6B14NLT1G
Trans MOSFET N-CH 100V 11A Automotive 5-Pin(4+Tab) SO-FL
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Item available on a request
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NVMFWS014P04M8LT1G
P-Channel 40 V 12.5A (Ta), 52.1A (Tc) 3.6W (Ta), 60W (Tc) Surface Mount 5-DFN (5
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Item available on a request
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NVTFS5116PLWFTAG
Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP
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Item available on a request
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NXH010P120MNF1PG onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays
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Item available on a request
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NXH010P120MNF1PNG onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays
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Item available on a request
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NXH010P120MNF1PTNG onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays
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Item available on a request
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PD20015-E STMicroelectronics
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
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Item available on a request
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PE537BA
PDFN3x3 MOSFETs ROHS
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Item available on a request
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PJA3404_R1_00001
SOT-23, MOSFET Transistors - FETs, MOSFETs - Single
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Item available on a request
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PJA3415A_R1_00001
SOT-23, MOSFET Transistors - FETs, MOSFETs - Single
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Item available on a request
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PJA3461_R1_00001
SOT-23, MOSFET Transistors - FETs, MOSFETs - Single
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Item available on a request
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PMV30ENEAR
PMV30ENEA/SOT23/TO-236AB Transistors - FETs, MOSFETs - Single
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Item available on a request
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PMXB65UPEZ
Trans MOSFET P-CH 12V 3.2A 3-Pin DFN-D EP
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Item available on a request
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PSMN2R4-30MLDX
Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP PSMN2R4-30MLDX
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Item available on a request
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PSMN3R7-100BSE NEXPERIA
Transistor MOSFET, TN-channel 100 V, 3.95 mOhm, D2PAK
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N-MOSFET | 100V | 100V | 20V | 10,7mOhm | 120A | 405W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | NXP | |||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.