Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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G2K8P15S
Transistor MOSFET; SOP-8; P-Channel; NO ESD; -150V; -2.2A; 2.5W; -2.2V; 277mΩ Si4455DY;
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Item available on a request
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SI4463BDY
P-MOSFET -13.7A -20V 3W 0.011Ω
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P-MOSFET | -20V | 12V | 11mOhm | -13,7A | 3W | SMD | -55°C ~ 150°C | SOP08 | VISHAY | ||||
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Item available on a request
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Item available on a request
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SI4948EY-T1-E3
P-MOSFET 3.1A 60V 2.4W
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2xP-MOSFET | 60V | 20V | 150mOhm | 3,1A | 2,4W | SMD | -55°C ~ 175°C | SOP08 | VISHAY | ||||
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Item available on a request
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SI4963DY VISHAY
2xP-MOSFET 20V 12V ID6.2A obsolete; Substitute: SI4963DY-T1-E3
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Item available on a request
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SI5618-TP
P-CHANNEL MOSFET, SOT-23 PACKAGE Transistors - FETs, MOSFETs - Single
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Item available on a request
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SI6954ADQ-T1-E3 VISHAY
Trans MOSFET N-CH Si 30V 3.1A 8-Pin TSSOP
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Item available on a request
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SI7315DN-T1-GE3 VISHAY
Trans MOSFET P-CH 150V 2.4A 8-Pin PowerPAK 1212
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Item available on a request
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SI7812DN-T1-E3 VISHAY
Trans MOSFET N-CH 75V 7.2A 8-Pin PowerPAK 1212
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Item available on a request
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SI7818DN-T1-E3
Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 SI7818DN; SI7818DN-T1-GE3;
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Item available on a request
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SI7998DP-T1-GE3 VISHAY
Trans MOSFET N-CH 30V 15A/21A 8-Pin PowerPAK SO
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Item available on a request
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G180N06S2
Transistor MOSFET; SOP-8; DUAL; N-Channel; NO ESD; 60V; 8A; 2W; 1.5V; 16.5mΩ; 18mΩ Si4946CDY; Si9945BDY; Si9634DY; G05N06S2 GOFORD; G06N06S2 GOFORD; G09N06S2 GOFORD
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Item available on a request
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SIA431DJ-T1-GE3
Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70
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Item available on a request
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SIA441DJ-T1-GE3
Trans MOSFET P-CH 40V 6.6A 6-Pin PowerPAK SC-70
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Item available on a request
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SIA906EDJ-T1-GE3
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70
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Item available on a request
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SIDR870ADP VISHAY
Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R SIDR870ADP-T1-GE3
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Item available on a request
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SIR632DP-T1-RE3 Vishay Siliconix
MOSFET N-CH 150V 29A POWERPAKSO
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Item available on a request
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SIR872DP-T1-GE3 Vishay Siliconix
MOSFET N-CH 150V 53.7A PPAK SO-8
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Item available on a request
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SIRA06DP-T1-GE3 Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
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Item available on a request
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SIRA50ADP-T1-RE3 Vishay Siliconix
MOSFET N-CHAN 40V PPAK SO-8
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Item available on a request
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SISS52DN-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE Transistors - FETs, MOSFETs - Single
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Item available on a request
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SISS76LDN-T1-GE3
P-CHANNEL 70 V (D-S) MOSFET POWE Transistors - FETs, MOSFETs - Single
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Item available on a request
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SPA16N50C3XKSA1
Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-220FP SPA16N50C3XKSA1; SPA16N50C3;
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Item available on a request
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SPD02N80C3
N-MOSFET 2A 800V 42W 2.7Ω SPD02N80C3ATMA1, SPD02N80C3BTMA1
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N-MOSFET | 800V | 20V | 6,5Ohm | 2A | 42W | SMD | -55°C ~ 150°C | TO252 (DPACK) | Infineon Technologies | ||||
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Item available on a request
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SPW20N60CFD
Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-247
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Item available on a request
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SQ2319ADS-T1
Transistor MOSFET, P-Channel, -4.6 A, 40 V, 0.068 ohm, 10 V, 2 V VISHAY SQ2319ADS-T1_BE3; SQ2319ADS-T1_GE3;
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P-MOSFET | -40V | 20V | 68mOhm | -4,6A | 2,5W | SMD | -55°C ~ 150°C | SC-59 | VISHAY | ||||
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Item available on a request
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SQD40081EL_GE3 Vishay Siliconix
P-Channel MOSFET; 40V; 20V; 13,1mOhm; 50A; 71W; -55°C ~ 175°C;
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P-MOSFET | 40V | 20V | 13,1mOhm | 50A | 71W | SMD | -55°C ~ 175°C | TO252 | VISHAY | ||||
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Item available on a request
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SQD50034EL_GE3
AUTOMOTIVE N-CHANNEL 250 V (D-S) Transistors - FETs, MOSFETs - Single
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Item available on a request
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SQJ409EP-T1-GE3
Trans MOSFET P-CH 40V 60A Automotive 5-Pin(4+Tab) PowerPAK SO
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P-MOSFET | 40V | 20V | 12,6mOhm | 60A | 68W | SMD | -55°C ~ 175°C | PPAK-SO8 | VISHAY | ||||
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Item available on a request
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SQM120P06-07L
Transistor P-MOSFET; 60V; 20V; 13mOhm; 120A; 375W; -55°C ~ 175°C; Substitute: SQM120P06-07L_GE3; SQM120P06-07L-GE3;
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P-MOSFET | 60V | 20V | 13mOhm | 120A | 375W | SMD | -55°C ~ 175°C | TO263 | VISHAY | ||||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.