Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
ZXMN10A25GTA Trans MOSFET N-CH 100V 4A Automotive 4-Pin(3+Tab) SOT-223
ZXMN10A25GTA SOT223
 
 
Item available on a request
                     
ZXMS6008FFQ-7 N-Channel Self Protected Enhancement Mode Mosfet Automotive AEC-Q101
ZXMS6008FFQ-7  
 
 
Item available on a request
                     
AUIR3313S INTERNATIONAL RECTIFIER Power Switch Hi Side 7A AUIR3313STRL(800pcs/reel) ; AUIR3313S(50pcs/Tube)
AUIR3313S INTERNATIONAL RECTIFIER TO263/5(D2PAK)
  THT -40°C ~ 150°C TO263/5(D2PAK) International Rectifier
 
Item available on a request
                     
BSS138 BORN Transistor N-Channel MOSFET; 50V; 50V; 20V; 3,5Ohm; 200mA; 300mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG;
BSS138 BORN SOT23
                         
Item available on a request
N-MOSFET 50V 50V 20V 3,5Ohm 200mA 300mW SMD -55°C ~ 150°C SOT23 BORN
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
                     
2N7000 Transistor N-Channel MOSFET; 60V; 60V; 20V; 9Ohm; 200mA; 400mW; -55°C ~ 150°C; Substitute: 2N7000-DIO;
2N7000 TO92
  N-MOSFET 60V 60V 20V 9Ohm 200mA 400mW THT -55°C ~ 150°C TO92 CJ
 
Item available on a request
                     
2N7000 TO92(ammo, formed PIN) CJ N-MOSFET 190mA 60V 250mW
2N7000 TO92(ammo, formed PIN) CJ TO92ammoformed
  N-MOSFET 60V 60V 20V 5,3Ohm 200mA 400mW THT -55°C ~ 150°C TO92ammoformed CJ
 
Item available on a request
                     
YJL3401A-F2-0000HF P-CH MOSFET 30V 4.4A SOT-23-3L
YJL3401A-F2-0000HF SOT23
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.