Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
|
Max. drain-source voltage
|
Max. drain-gate voltage
|
Max. gate-source Voltage
|
Open channel resistance
|
Max. drain current
|
Max. power loss
|
Mounting
|
Operating temperature (range)
|
Case
|
Manufacturer
|
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF7307
N/P-MOSFET 5,2A/-4,3A +20V/-20V 2W 0.05/0.09Ω
|
|||||||||||||
2xN/P-MOSFET | 20V | 12V | 140mOhm | 5,2A | 2W | SMD | -55°C ~ 150°C | SOP08 | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRF7314TR
Tranzystor 2xP-Channel MOSFET; 20V; 12V; 95mOhm; 5,3A; 2W; -55°C ~ 150°C; Odpowiednik: IRF7314PBF; IRF7314TRPBF; SP001562198; SP001570224;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
CJQ4953/SOP8
Transistor 2xP-Channel MOSFET; 30V; 20V; 98mOhm; 4,9A; 2W; -55°C ~ 150°C; Replacement: IRF7316TRPBF; IRF7316PBF-GURT; IRF7316; CJQ4953; CJQ4953/SOP8;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
|
Item in delivery
Estimated time: 2025-04-24
Quantity of pieces: 1000
|
||||||||||||
IRF7380Q
N-MOSFET HEXFET 3.6A 80V 2W 0.073Ω
|
|||||||||||||
N-MOSFET | 80V | 20V | 73mOhm | 3,6A | 2W | SMD | -55°C ~ 150°C | SOP08 | Infineon Technologies | ||||
|
Item available on a request
|
||||||||||||
G18P03S
Transistor MOSFET; SOP-8; P-Channel; NO ESD; -30V; -15A; 3.1W; -1.6V; 8.1mΩ; 10.5mΩ IRF7425; AOSP21307
|
|||||||||||||
|
Item available on a request
|
||||||||||||
IRF7425TRPBF SOP8 TECH PUBLIC
Tranzystor P-Channel MOSFET; 20V; 12V; 13mOhm; 15A; 2,5W; -55°C ~ 150°C; Odpowiednik: IRF7220; IRF7220PBF; IRF7425TRPBF; IRF7425PBF; IRF7425PBF-GURT;
|
|||||||||||||
|
Item available on a request
|
||||||||||||
IRF7458
N-MOSFET 12A 30V 2.5W 0.009Ω
|
|||||||||||||
N-MOSFET | |||||||||||||
|
Item available on a request
|
||||||||||||
IRF7476
N-MOSFET HEXFET 15A 12V 2.5W 0.008Ω
|
|||||||||||||
N-MOSFET | 12V | 12V | 30mOhm | 15A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRF7478TRPBF
Transistor N-Channel MOSFET; 60V; 20V; 30mOhm; 7A; 2,5W; -55°C ~ 150°C; Replacement: IRF7478PBF; IRF7478TRPBF; IRF7478PBF-GURT; Obsolete; IRF7478;
|
|||||||||||||
N-MOSFET | 60V | 20V | 30mOhm | 7A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | |||||
|
Item available on a request
|
||||||||||||
IRF7507TR MICRO8
N/P-MOSFET HEXFET 2.4A, 1.7A 20V 1.25W 0.14Ω
|
|||||||||||||
N/P-MOSFET | |||||||||||||
|
Item available on a request
|
||||||||||||
IRF7580MTRPBF
Trans MOSFET N-CH 60V 114A 10-Pin Direct-FET ME
|
|||||||||||||
|
Item available on a request
|
||||||||||||
IRF820 TO220 LGE
N-MOSFET 3A 500V 50W 3Ω
|
|||||||||||||
N-MOSFET | 500V | 20V | 3Ohm | 2,5A | 50W | THT | -55°C ~ 150°C | TO220 | LGE | ||||
|
Item available on a request
|
||||||||||||
IRF830PBF JSMICRO
Transistor N-Channel MOSFET; 550V; 30V; 2,6Ohm; 4A; 33W; -55°C ~ 150°C; Equivalent: IRF830PBF; IRF830PBF-BE3;
|
|||||||||||||
N-MOSFET | 550V | 30V | 2,6Ohm | 4A | 33W | THT | -55°C ~ 150°C | TO220 | JSMICRO | ||||
|
Item available on a request
|
||||||||||||
IRF830PBF-ML MOSLEADER
Transistor N-Channel MOSFET; 500V; 30V; 1,2Ohm; 5A; 83W; -55°C ~ 150°C; Equivalent: IRF830PBF; IRF830PBF-BE3;
|
|||||||||||||
N-MOSFET | 500V | 30V | 1,2Ohm | 5A | 83W | THT | -55°C ~ 150°C | TO220 | MOSLEADER | ||||
|
Item available on a request
|
||||||||||||
IRF840PBF-ML MOSLEADER
Transistor N-Channel MOSFET; 500V; 30V; 695mOhm; 10A; 178W; -55°C ~ 150°C; Equivalent: IRF840PBF; IRF840PBF-BE3;
|
|||||||||||||
N-MOSFET | 500V | 30V | 695mOhm | 10A | 178W | THT | -55°C ~ 150°C | TO220 | MOSLEADER | ||||
|
Item available on a request
|
||||||||||||
IRF9310
P-MOSFET 30V 20A 2.5W
|
|||||||||||||
P-MOSFET | 30V | 20V | 6,8mOhm | 20A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | Infineon Technologies | ||||
|
Item available on a request
|
||||||||||||
IRF9310
Transistor P-Channel MOSFET; 30V; 20A; 2,8Ohm; 20V; 2,5W; -55°C~150°C; Substitute: IRF9310TR UMW; IRF9310TRPBF&-9-VB VBSEMI; AS30P15S;
|
|||||||||||||
|
Item available on a request
|
P-MOSFET | 30V | 10V | 20V | 2,8Ohm | 20A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | UMW | |
|
Item in delivery
Estimated time: 2025-04-24
Quantity of pieces: 1000
|
||||||||||||
IRF9510SPBF
P-MOSFET 4A 100V IRF9510SPBF IRF9510STRRPBF IRF9510STRLPBF
|
|||||||||||||
P-MOSFET | 100V | 20V | 1,2Ohm | 4A | 43W | SMD | -55°C ~ 175°C | D2PAK | VISHAY | ||||
|
Item available on a request
|
||||||||||||
IRF9540N TO220
100V 23A 140W 0.117?@10V,11A 2V@250uA 1 Piece P-Channel TO-220-3 MOSFETs ROHS
|
|||||||||||||
|
Item available on a request
|
||||||||||||
IRFB20N50KPBF
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
|
|||||||||||||
N-MOSFET | 500V | 30V | 250mOhm | 20A | 280W | THT | -55°C ~ 150°C | TO220 | VISHAY | ||||
|
Item available on a request
|
||||||||||||
IRFB23N15DPBF Infineon
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB
|
|||||||||||||
N-MOSFET | 150V | 30V | 90mOhm | 23A | 136W | THT | -55°C ~ 175°C | TO220AB | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRFB3256PBF
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
|
|||||||||||||
N-MOSFET | 60V | 20V | 3,4mOhm | 206A | 300W | THT | -55°C ~ 175°C | TO220 | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRFB4110 UMW
Transistor N-Channel MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFB4110PBF; IRFB4110GPBF; SP001570598; SP001556050;
|
|||||||||||||
N-MOSFET | 100V | 20V | 4,5mOhm | 180A | 370W | THT | -55°C ~ 175°C | TO220 | UMW | ||||
|
Item available on a request
|
||||||||||||
IRFB41N15D
N-MOSFET 41A 150V 200W 0.045Ω
|
|||||||||||||
N-MOSFET | 150V | 30V | 45mOhm | 41A | 200W | THT | -55°C ~ 175°C | TO220 | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRFB7540PBF
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFETR Power Mosfet - TO-220-3
|
|||||||||||||
|
Item available on a request
|
||||||||||||
IRFB7740PBF
Trans MOSFET N-CH 75V 87A 3-Pin(3+Tab) TO-220AB Tube
|
|||||||||||||
|
Item available on a request
|
||||||||||||
IRFHM9331 Infineon
P-MOSFET 30V 14,6mΩ 2.8W IRFM9331TRPBF
|
|||||||||||||
P-MOSFET | 30V | 25V | 10mOhm | 11A | 2,8W | SMD | -55°C ~ 150°C | PQFN08 (6x5mm) | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRFI4410ZPBF Infineon
N-MOSFET 100V 43A 47W
|
|||||||||||||
N-MOSFET | 100V | 30V | 9,3mOhm | 43A | 47W | THT | -55°C ~ 175°C | TO220FP | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRFI4510GPBF Infineon
N-MOSFET 100V 35A 42W
|
|||||||||||||
N-MOSFET | 100V | 20V | 13,5mOhm | 35A | 42W | THT | -55°C ~ 175°C | TO220 | Infineon (IRF) | ||||
|
Item available on a request
|
||||||||||||
IRFIZ48NPBF Infineon
N-MOSFET 55V 40A 54W
|
|||||||||||||
N-MOSFET | 55V | 20V | 16mOhm | 40A | 54W | THT | -55°C ~ 175°C | TO220FP | Infineon (IRF) | ||||
|
Item available on a request
|
Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.