Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
IRF7307 N/P-MOSFET 5,2A/-4,3A +20V/-20V 2W 0.05/0.09Ω
IRF7307 SOP08
  2xN/P-MOSFET 20V 12V 140mOhm 5,2A 2W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
IRF7314TR Tranzystor 2xP-Channel MOSFET; 20V; 12V; 95mOhm; 5,3A; 2W; -55°C ~ 150°C; Odpowiednik: IRF7314PBF; IRF7314TRPBF; SP001562198; SP001570224;
IRF7314TR SOP08
 
 
Item available on a request
                     
CJQ4953/SOP8 Transistor 2xP-Channel MOSFET; 30V; 20V; 98mOhm; 4,9A; 2W; -55°C ~ 150°C; Replacement: IRF7316TRPBF; IRF7316PBF-GURT; IRF7316; CJQ4953; CJQ4953/SOP8;
CJQ4953/SOP8 SOP08
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-24
Quantity of pieces: 1000
                     
IRF7380Q N-MOSFET HEXFET 3.6A 80V 2W 0.073Ω
IRF7380Q SOP08
  N-MOSFET 80V 20V 73mOhm 3,6A 2W SMD -55°C ~ 150°C SOP08 Infineon Technologies
 
Item available on a request
                     
G18P03S Transistor MOSFET; SOP-8; P-Channel; NO ESD; -30V; -15A; 3.1W; -1.6V; 8.1mΩ; 10.5mΩ IRF7425; AOSP21307
G18P03S SOP08
 
 
Item available on a request
                     
IRF7425TRPBF SOP8 TECH PUBLIC Tranzystor P-Channel MOSFET; 20V; 12V; 13mOhm; 15A; 2,5W; -55°C ~ 150°C; Odpowiednik: IRF7220; IRF7220PBF; IRF7425TRPBF; IRF7425PBF; IRF7425PBF-GURT;
IRF7425TRPBF SOP8 TECH PUBLIC SOP08
 
 
Item available on a request
                     
IRF7458 N-MOSFET 12A 30V 2.5W 0.009Ω
IRF7458 SOP08
  N-MOSFET
 
Item available on a request
                     
IRF7476 N-MOSFET HEXFET 15A 12V 2.5W 0.008Ω
IRF7476 SOP08
  N-MOSFET 12V 12V 30mOhm 15A 2,5W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
IRF7478TRPBF Transistor N-Channel MOSFET; 60V; 20V; 30mOhm; 7A; 2,5W; -55°C ~ 150°C; Replacement: IRF7478PBF; IRF7478TRPBF; IRF7478PBF-GURT; Obsolete; IRF7478;
IRF7478TRPBF SOP08
  N-MOSFET 60V 20V 30mOhm 7A 2,5W SMD -55°C ~ 150°C SOP08
 
Item available on a request
                     
IRF7507TR MICRO8 N/P-MOSFET HEXFET 2.4A, 1.7A 20V 1.25W 0.14Ω
IRF7507TR MICRO8 MICRO8
  N/P-MOSFET
 
Item available on a request
                     
IRF7580MTRPBF Trans MOSFET N-CH 60V 114A 10-Pin Direct-FET ME
IRF7580MTRPBF DirectFET
 
 
Item available on a request
                     
IRF820 TO220 LGE N-MOSFET 3A 500V 50W 3Ω
IRF820 TO220 LGE TO220
  N-MOSFET 500V 20V 3Ohm 2,5A 50W THT -55°C ~ 150°C TO220 LGE
 
Item available on a request
                     
IRF830PBF JSMICRO Transistor N-Channel MOSFET; 550V; 30V; 2,6Ohm; 4A; 33W; -55°C ~ 150°C; Equivalent: IRF830PBF; IRF830PBF-BE3;
IRF830PBF JSMICRO TO220
  N-MOSFET 550V 30V 2,6Ohm 4A 33W THT -55°C ~ 150°C TO220 JSMICRO
 
Item available on a request
                     
IRF830PBF-ML MOSLEADER Transistor N-Channel MOSFET; 500V; 30V; 1,2Ohm; 5A; 83W; -55°C ~ 150°C; Equivalent: IRF830PBF; IRF830PBF-BE3;
IRF830PBF-ML MOSLEADER TO220
  N-MOSFET 500V 30V 1,2Ohm 5A 83W THT -55°C ~ 150°C TO220 MOSLEADER
 
Item available on a request
                     
IRF840PBF-ML MOSLEADER Transistor N-Channel MOSFET; 500V; 30V; 695mOhm; 10A; 178W; -55°C ~ 150°C; Equivalent: IRF840PBF; IRF840PBF-BE3;
IRF840PBF-ML MOSLEADER TO220
  N-MOSFET 500V 30V 695mOhm 10A 178W THT -55°C ~ 150°C TO220 MOSLEADER
 
Item available on a request
                     
IRF9310 P-MOSFET 30V 20A 2.5W
IRF9310 SOP08
  P-MOSFET 30V 20V 6,8mOhm 20A 2,5W SMD -55°C ~ 150°C SOP08 Infineon Technologies
 
Item available on a request
                     
IRF9310 Transistor P-Channel MOSFET; 30V; 20A; 2,8Ohm; 20V; 2,5W; -55°C~150°C; Substitute: IRF9310TR UMW; IRF9310TRPBF&-9-VB VBSEMI; AS30P15S;
IRF9310 SOP08
                         
Item available on a request
P-MOSFET 30V 10V 20V 2,8Ohm 20A 2,5W SMD -55°C ~ 150°C SOP08 UMW
                           
Item in delivery
Estimated time: 2025-04-24
Quantity of pieces: 1000
                     
IRF9510SPBF P-MOSFET 4A 100V IRF9510SPBF IRF9510STRRPBF IRF9510STRLPBF
IRF9510SPBF D2PAK
  P-MOSFET 100V 20V 1,2Ohm 4A 43W SMD -55°C ~ 175°C D2PAK VISHAY
 
Item available on a request
                     
IRF9540N TO220 100V 23A 140W 0.117?@10V,11A 2V@250uA 1 Piece P-Channel TO-220-3 MOSFETs ROHS
IRF9540N TO220 TO220
 
 
Item available on a request
                     
IRFB20N50KPBF Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
IRFB20N50KPBF TO220
  N-MOSFET 500V 30V 250mOhm 20A 280W THT -55°C ~ 150°C TO220 VISHAY
 
Item available on a request
                     
IRFB23N15DPBF Infineon Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB
IRFB23N15DPBF Infineon TO220AB
  N-MOSFET 150V 30V 90mOhm 23A 136W THT -55°C ~ 175°C TO220AB Infineon (IRF)
 
Item available on a request
                     
IRFB3256PBF Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
IRFB3256PBF TO220
  N-MOSFET 60V 20V 3,4mOhm 206A 300W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRFB4110 UMW Transistor N-Channel MOSFET; 100V; 20V; 4,5mOhm; 180A; 370W; -55°C ~ 175°C; Equivalent: IRFB4110PBF; IRFB4110GPBF; SP001570598; SP001556050;
IRFB4110 UMW TO220
  N-MOSFET 100V 20V 4,5mOhm 180A 370W THT -55°C ~ 175°C TO220 UMW
 
Item available on a request
                     
IRFB41N15D N-MOSFET 41A 150V 200W 0.045Ω
IRFB41N15D TO220
  N-MOSFET 150V 30V 45mOhm 41A 200W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRFB7540PBF Single N-Channel 60 V 5.1 mOhm 88 nC HEXFETR Power Mosfet - TO-220-3
IRFB7540PBF TO220
 
 
Item available on a request
                     
IRFB7740PBF Trans MOSFET N-CH 75V 87A 3-Pin(3+Tab) TO-220AB Tube
IRFB7740PBF TO220
 
 
Item available on a request
                     
IRFHM9331 Infineon P-MOSFET 30V 14,6mΩ 2.8W IRFM9331TRPBF
IRFHM9331 Infineon PQFN08 (6x5mm)
  P-MOSFET 30V 25V 10mOhm 11A 2,8W SMD -55°C ~ 150°C PQFN08 (6x5mm) Infineon (IRF)
 
Item available on a request
                     
IRFI4410ZPBF Infineon N-MOSFET 100V 43A 47W
IRFI4410ZPBF Infineon TO220FP
  N-MOSFET 100V 30V 9,3mOhm 43A 47W THT -55°C ~ 175°C TO220FP Infineon (IRF)
 
Item available on a request
                     
IRFI4510GPBF Infineon N-MOSFET 100V 35A 42W
IRFI4510GPBF Infineon TO220
  N-MOSFET 100V 20V 13,5mOhm 35A 42W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRFIZ48NPBF Infineon N-MOSFET 55V 40A 54W
IRFIZ48NPBF Infineon TO220FP
  N-MOSFET 55V 20V 16mOhm 40A 54W THT -55°C ~ 175°C TO220FP Infineon (IRF)
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.