Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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IRF3710
Tranzystor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C; Odpowiednik: IRF3710PBF; SP001551058; SKG45N10-T;
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Item available on a request
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IRF3710PBF-ML MOSLEADER
Transistor N-Channel MOSFET; 100V; 20V; 10mOhm; 80A; 125W; -55°C ~ 150°C; Equivalent: IRF3710PBF; SP001551058;
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N-MOSFET | 100V | 20V | 10mOhm | 80A | 125W | THT | -55°C ~ 150°C | TO220 | MOSLEADER | ||||
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Item available on a request
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IRF3711
Transistor N-Channel MOSFET; 20V; 20V; 8,5mOhm; 110A; 120W; -55°C ~ 150°C; IRF3711PBF
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N-MOSFET | 20V | 20V | 8,5mOhm | 110A | 120W | THT | -55°C ~ 150°C | TO220 | International Rectifier | ||||
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Item available on a request
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IRF3808PBF-ML MOSLEADER
Transistor N-Channel MOSFET; 80V; 20V; 4.5mOhm; 130A; 192W; -55°C ~ 150°C; Equivalent: IRF3808PBF; SP001563250;
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N-MOSFET | 80V | 20V | 4,5mOhm | 130A | 192W | THT | -55°C ~ 150°C | TO220 | MOSLEADER | ||||
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Item available on a request
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IRF4104
N-MOSFET HEXFET 40V 75A 140W 0,0055Ω
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Item available on a request
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IRF4905
Transistor P-Channel MOSFET; 55V; 20V; 20mOhm; 74A; 200W; -55°C ~ 175°C; IRF4905PBF; IRF 4905 PBF;
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Item available on a request
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IRF5210 TO220
110V 35A 26m?@10V,15A 180W 1 Piece P-Channel TO-220 MOSFETs ROHS IRF5210PBF-JSM; IRF5210PBF;
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IRF530NS TO-263-2 VBsemi Elec
100V 20A 1V 1 N-channel TO-263-2 MOSFETs ROHS
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Item available on a request
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G45P40T
Transistor MOSFET; TO-220; P-Channel; NO ESD; -40V; -45A; 80W; ; -1.5V; 10.5mΩ; 15mΩ IRF5305;
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Item available on a request
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IRF5305PBF JSMICRO
Transistor P-Channel MOSFET; 60V; 20V; 55mOhm; 35A; 110W; -55°C ~ 150°C; Equivalent: IRF5305PBF; SP001564354;
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P-MOSFET | 60V | 20V | 55mOhm | 35A | 110W | THT | -55°C ~ 150°C | TO220 | JSMICRO | ||||
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Item available on a request
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IRF530N JSMICRO
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF530PBF; IRF530PBF-BE3; IRF530NPBF; SP001570120;
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N-MOSFET | 100V | 20V | 38mOhm | 33A | 110W | THT | -55°C ~ 150°C | TO220 | JSMICRO | ||||
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Item available on a request
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IRF530N
TO-220AB MOSFETs ROHS IRF530N-VB
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IRF540PBF
N-MOSFET 27A 100V 125W 0.052Ω Replacement: STP30NF10; IRF540PBF; IRF540;
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N-MOSFET | 100V | 20V | 77mOhm | 28A | 150W | THT | -55°C ~ 175°C | TO220 | |||||
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Item available on a request
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IRF540N
100V 35A 25m?@10V,12A 70W 2.3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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IRF6215
Trans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) TO-220AB
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Item available on a request
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IRF6218S
Transistor P-Channel MOSFET; 150V; 20V; 150mOhm; 27A; 250W; -55°C ~ 175°C; IRF6218SPBF, IRF6218STRLPBF
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P-MOSFET | 150V | 20V | 150mOhm | 27A | 250W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | International Rectifier | ||||
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Item available on a request
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IRF640NS D2PAK
Tranzystor N-Channel MOSFET; 200V; 20V; 150mOhm; 18A; 150W; -55°C ~ 175°C; Odpowiednik: IRF640NSTRLPBF; IRF640NSPBF; IRF640NSPBF-GURT; IRF640NSTRRPBF;
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Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 100
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IRF6668TRPBF INFINEON
Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R IRF6668TRPBF
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IRF7103TR UMW
Transistor 2xN-Channel MOSFET; 50V; 20V; 40mOhm; 3A; 2W; -55°C ~ 150°C; Equivalent: IRF7103PBF; IRF7103TRPBF; SP001563458; SP001562004;
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2xN-MOSFET | 50V | 20V | 40mOhm | 3A | 2W | SMD | -55°C ~ 150°C | SOP08 | UMW | ||||
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IRF7204 smd
P-MOSFET 5.3A 20V 2.5W 0.06Ω
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P-MOSFET | 20V | 12V | 100mOhm | 5,3A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | Infineon (IRF) | ||||
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Item available on a request
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IRF7204TR UMW
Transistor P-Channel MOSFET; 30V; 20V; 90mOhm; 5,1A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7204PBF; IRF7204TRPBF; SP001574762; SP001551198;
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P-MOSFET | 30V | 20V | 90mOhm | 5,1A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | UMW | ||||
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Item available on a request
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IRF7204TR
20V 13A 15mOhm@4.5V,13A P Channel SOP-8-4.0mm MOSFETs IRF7204TR-VB;
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IRF7210
P-MOSFET -16A -12V 0.007Ω
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P-MOSFET | 12V | 12V | 10mOhm | 16A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | Infineon (IRF) | ||||
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Item available on a request
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G13P04S
Transistor MOSFET; SOP-8; P-Channel; NO ESD; -40V; -13A; 3W; -1.8V; 13mΩ IRF7240TRPBF; DMP4025LK3Q
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PT9926 SOP-8 HT SEMI
Tranzystor Dual N-Channel MOSFET; 20V; 12V; 19mOhm; 7,1A; 2W; -55°C~150°C; ODPOWIEDNIK: IRF7301TRPBF;
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IRF7304
Podobny do: IRF7304TR; IRF7304PBF; IRF7304TRPBF; IRF7304TRPBF-VB;
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.