Unipolar Transistors (results: 5467)

1    169  170  171  172  173  174  175  176  177    183
Product Cart
Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
IRF3710 Tranzystor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C; Odpowiednik: IRF3710PBF; SP001551058; SKG45N10-T;
IRF3710 TO220
 
 
Item available on a request
                     
IRF3710PBF-ML MOSLEADER Transistor N-Channel MOSFET; 100V; 20V; 10mOhm; 80A; 125W; -55°C ~ 150°C; Equivalent: IRF3710PBF; SP001551058;
IRF3710PBF-ML MOSLEADER TO220
  N-MOSFET 100V 20V 10mOhm 80A 125W THT -55°C ~ 150°C TO220 MOSLEADER
 
Item available on a request
                     
IRF3711 Transistor N-Channel MOSFET; 20V; 20V; 8,5mOhm; 110A; 120W; -55°C ~ 150°C; IRF3711PBF
IRF3711 TO220
  N-MOSFET 20V 20V 8,5mOhm 110A 120W THT -55°C ~ 150°C TO220 International Rectifier
 
Item available on a request
                     
IRF3808PBF-ML MOSLEADER Transistor N-Channel MOSFET; 80V; 20V; 4.5mOhm; 130A; 192W; -55°C ~ 150°C; Equivalent: IRF3808PBF; SP001563250;
IRF3808PBF-ML MOSLEADER TO220
  N-MOSFET 80V 20V 4,5mOhm 130A 192W THT -55°C ~ 150°C TO220 MOSLEADER
 
Item available on a request
                     
IRF4104 N-MOSFET HEXFET 40V 75A 140W 0,0055Ω
IRF4104 TO220
  N-MOSFET
 
Item available on a request
                     
IRF4905 Transistor P-Channel MOSFET; 55V; 20V; 20mOhm; 74A; 200W; -55°C ~ 175°C; IRF4905PBF; IRF 4905 PBF;
IRF4905 TO220
 
 
Item available on a request
                     
IRF5210 TO220 110V 35A 26m?@10V,15A 180W 1 Piece P-Channel TO-220 MOSFETs ROHS IRF5210PBF-JSM; IRF5210PBF;
IRF5210 TO220 TO220
 
 
Item available on a request
                     
IRF530NS TO-263-2 VBsemi Elec 100V 20A 1V 1 N-channel TO-263-2 MOSFETs ROHS
IRF530NS TO-263-2 VBsemi Elec TO263
 
 
Item available on a request
                     
G45P40T Transistor MOSFET; TO-220; P-Channel; NO ESD; -40V; -45A; 80W; ; -1.5V; 10.5mΩ; 15mΩ IRF5305;
G45P40T TO220
 
 
Item available on a request
                     
IRF5305PBF JSMICRO Transistor P-Channel MOSFET; 60V; 20V; 55mOhm; 35A; 110W; -55°C ~ 150°C; Equivalent: IRF5305PBF; SP001564354;
IRF5305PBF JSMICRO TO220
  P-MOSFET 60V 20V 55mOhm 35A 110W THT -55°C ~ 150°C TO220 JSMICRO
 
Item available on a request
                     
IRF530N JSMICRO Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF530PBF; IRF530PBF-BE3; IRF530NPBF; SP001570120;
IRF530N JSMICRO TO220
  N-MOSFET 100V 20V 38mOhm 33A 110W THT -55°C ~ 150°C TO220 JSMICRO
 
Item available on a request
                     
IRF530N TO-220AB MOSFETs ROHS IRF530N-VB
IRF530N TO220
 
 
Item available on a request
                     
IRF540PBF N-MOSFET 27A 100V 125W 0.052Ω Replacement: STP30NF10; IRF540PBF; IRF540;
IRF540PBF TO220
  N-MOSFET 100V 20V 77mOhm 28A 150W THT -55°C ~ 175°C TO220
 
Item available on a request
                     
IRF540N 100V 35A 25m?@10V,12A 70W 2.3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
IRF540N TO220
 
 
Item available on a request
                     
IRF6215 Trans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) TO-220AB
IRF6215 TO220
 
 
Item available on a request
                     
IRF6218S Transistor P-Channel MOSFET; 150V; 20V; 150mOhm; 27A; 250W; -55°C ~ 175°C; IRF6218SPBF, IRF6218STRLPBF
IRF6218S TO263 (D2PAK)
  P-MOSFET 150V 20V 150mOhm 27A 250W SMD -55°C ~ 175°C TO263 (D2PAK) International Rectifier
 
Item available on a request
                     
IRF640NS D2PAK Tranzystor N-Channel MOSFET; 200V; 20V; 150mOhm; 18A; 150W; -55°C ~ 175°C; Odpowiednik: IRF640NSTRLPBF; IRF640NSPBF; IRF640NSPBF-GURT; IRF640NSTRRPBF;
IRF640NS D2PAK TO263 (D2PAK)
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 100
                     
TO263 (D2PAK)
 
 
Item available on a request
                     
IRF6668TRPBF INFINEON Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R IRF6668TRPBF
IRF6668TRPBF INFINEON  
 
 
Item available on a request
                     
IRF7103TRPBF SOIC8 TECH PUBLIC SOP08
 
 
Item available on a request
                     
IRF7103TR UMW Transistor 2xN-Channel MOSFET; 50V; 20V; 40mOhm; 3A; 2W; -55°C ~ 150°C; Equivalent: IRF7103PBF; IRF7103TRPBF; SP001563458; SP001562004;
IRF7103TR UMW SOP08
  2xN-MOSFET 50V 20V 40mOhm 3A 2W SMD -55°C ~ 150°C SOP08 UMW
 
Item available on a request
                     
IRF7103TR-VB SOP8 VBsemi Elec SOP08
 
 
Item available on a request
                     
IRF7204 smd P-MOSFET 5.3A 20V 2.5W 0.06Ω
IRF7204 smd SOP08
  P-MOSFET 20V 12V 100mOhm 5,3A 2,5W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
IRF7204TR UMW Transistor P-Channel MOSFET; 30V; 20V; 90mOhm; 5,1A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7204PBF; IRF7204TRPBF; SP001574762; SP001551198;
IRF7204TR UMW SOP08
  P-MOSFET 30V 20V 90mOhm 5,1A 2,5W SMD -55°C ~ 150°C SOP08 UMW
 
Item available on a request
                     
IRF7204TR 20V 13A 15mOhm@4.5V,13A P Channel SOP-8-4.0mm MOSFETs IRF7204TR-VB;
IRF7204TR SOP08
 
 
Item available on a request
                     
IRF7210 P-MOSFET -16A -12V 0.007Ω
IRF7210 SOP08
  P-MOSFET 12V 12V 10mOhm 16A 2,5W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
G13P04S Transistor MOSFET; SOP-8; P-Channel; NO ESD; -40V; -13A; 3W; -1.8V; 13mΩ IRF7240TRPBF; DMP4025LK3Q
G13P04S SOP08
 
 
Item available on a request
                     
PT9926 SOP-8 HT SEMI Tranzystor Dual N-Channel MOSFET; 20V; 12V; 19mOhm; 7,1A; 2W; -55°C~150°C; ODPOWIEDNIK: IRF7301TRPBF;
PT9926 SOP-8 HT SEMI SOP08
 
 
Item available on a request
                     
IRF7303 SOP08
 
 
Item available on a request
                     
IRF7304 Podobny do: IRF7304TR; IRF7304PBF; IRF7304TRPBF; IRF7304TRPBF-VB;
IRF7304 SOP08
 
 
Item available on a request
                     
1    169  170  171  172  173  174  175  176  177    183

Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.