Unipolar Transistors (results: 5467)

1    165  166  167  168  169  170  171  172  173    183
Product Cart
Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
G08P06D3 Goford Semiconductor P60V,RD(MAX)<52M@-10V,VTH-2V~-3. Transistors - FETs, MOSFETs - Single
G08P06D3 Goford Semiconductor  
 
 
Item available on a request
                     
G09P02L Goford Semiconductor P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3 Transistors - FETs, MOSFETs - Single
G09P02L Goford Semiconductor  
 
 
Item available on a request
                     
G1002L Goford Semiconductor N100V,RD(MAX)<250M@10V,VTH1.2V~2 Transistors - FETs, MOSFETs - Single
G1002L Goford Semiconductor  
 
 
Item available on a request
                     
G1003A Goford Semiconductor N100V,RD(MAX)<210M@10V,RD(MAX)<2 Transistors - FETs, MOSFETs - Single
G1003A Goford Semiconductor  
 
 
Item available on a request
                     
G1006LE Goford Semiconductor N100V,RD(MAX)<150M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
G1006LE Goford Semiconductor  
 
 
Item available on a request
                     
G10N03S Goford Semiconductor N30V,RD(MAX)<12M@10V,RD(MAX)<16M Transistors - FETs, MOSFETs - Single
G10N03S Goford Semiconductor  
 
 
Item available on a request
                     
G110N06K Goford Semiconductor N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Transistors - FETs, MOSFETs - Single
G110N06K Goford Semiconductor  
 
 
Item available on a request
                     
G110N06T Goford Semiconductor N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Transistors - FETs, MOSFETs - Single
G110N06T Goford Semiconductor  
 
 
Item available on a request
                     
G12P04K Goford Semiconductor P40V,RD(MAX)<35M@-10V,RD(MAX)<45 Transistors - FETs, MOSFETs - Single
G12P04K Goford Semiconductor  
 
 
Item available on a request
                     
G12P10K Goford Semiconductor P100V,RD(MAX)<200M@-10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
G12P10K Goford Semiconductor  
 
 
Item available on a request
                     
G15N06K Goford Semiconductor N-CH, 60V,15A,RD(MAX)<45M@10V,RD Transistors - FETs, MOSFETs - Single
G15N06K Goford Semiconductor  
 
 
Item available on a request
                     
G16P03D3 Goford Semiconductor P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Transistors - FETs, MOSFETs - Single
G16P03D3 Goford Semiconductor  
 
 
Item available on a request
                     
G16P03S Goford Semiconductor P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Transistors - FETs, MOSFETs - Single
G16P03S Goford Semiconductor  
 
 
Item available on a request
                     
G18P03D3 Goford Semiconductor P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Transistors - FETs, MOSFETs - Single
G18P03D3 Goford Semiconductor  
 
 
Item available on a request
                     
G2014 Goford Semiconductor N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M Transistors - FETs, MOSFETs - Single
G2014 Goford Semiconductor  
 
 
Item available on a request
                     
G20N03D2 Goford Semiconductor N30V,RD(MAX)<24M@10V,RD(MAX)<29M Transistors - FETs, MOSFETs - Single
G20N03D2 Goford Semiconductor  
 
 
Item available on a request
                     
G20N03K Goford Semiconductor N30V,RD(MAX)<20M@10V,RD(MAX)<24M Transistors - FETs, MOSFETs - Single
G20N03K Goford Semiconductor  
 
 
Item available on a request
                     
G20N06D52 Goford Semiconductor N60V,RD(MAX)<30M@10V,RD(MAX)<40M Transistors - FETs, MOSFETs - Arrays
G20N06D52 Goford Semiconductor  
 
 
Item available on a request
                     
G20P08K Goford Semiconductor P-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Transistors - FETs, MOSFETs - Single
G20P08K Goford Semiconductor  
 
 
Item available on a request
                     
G20P10KE Goford Semiconductor P-CH, -100V, 20A, RD(MAX)<116M@- Transistors - FETs, MOSFETs - Single
G20P10KE Goford Semiconductor  
 
 
Item available on a request
                     
G2304 Transistor MOSFET; SOT-23; N-Channel; NO ESD; 30V; 3.6A; 1.7W; 1.5V; 47mΩ~58mΩ; 61mΩ~73mΩ;
G2304 SOT23
 
 
Item available on a request
                     
G26P04D5 Goford Semiconductor P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Transistors - FETs, MOSFETs - Single
G26P04D5 Goford Semiconductor  
 
 
Item available on a request
                     
G28N03D3 Goford Semiconductor N30V,RD(MAX)<12M@10V,RD(MAX)<18M Transistors - FETs, MOSFETs - Single
G28N03D3 Goford Semiconductor  
 
 
Item available on a request
                     
G30N02T Goford Semiconductor N20V,RD(MAX)<13M@4.5V,VTH0.5V~1. Transistors - FETs, MOSFETs - Single
G30N02T Goford Semiconductor  
 
 
Item available on a request
                     
G30N03D3 Goford Semiconductor N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
G30N03D3 Goford Semiconductor  
 
 
Item available on a request
                     
G3404B Goford Semiconductor N30V,RD(MAX)<22M@10V,RD(MAX)<35M Transistors - FETs, MOSFETs - Single
G3404B Goford Semiconductor  
 
 
Item available on a request
                     
G3404LL Goford Semiconductor N30V,RD(MAX)<22M@10V,RD(MAX)<35M Transistors - FETs, MOSFETs - Single
G3404LL Goford Semiconductor  
 
 
Item available on a request
                     
G40P03D5 Transistor MOSFET; DFN5*6-8L; P-Channel; NO ESD; -30V; -35A; 48W; -1.4V; 8.5mΩ; 11.5mΩ
G40P03D5 DFN08(5x6)
 
 
Item available on a request
                     
G40P03K Goford Semiconductor P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
G40P03K Goford Semiconductor  
 
 
Item available on a request
                     
G45P02D3 Goford Semiconductor P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)< Transistors - FETs, MOSFETs - Single
G45P02D3 Goford Semiconductor  
 
 
Item available on a request
                     
1    165  166  167  168  169  170  171  172  173    183

Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.