Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
BSC010N04LS6 Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP OptiMOS 6 BSC010N04LS6ATMA1
BSC010N04LS6 TDSON08
  N-MOSFET 40V 20V 1,4mOhm 285A 150W SMD -55°C ~ 175°C TDSON08 Infineon Technologies
 
Item available on a request
                     
BSC011N03LS Infineon N-MOSFET 30V 100A 1.1mΩ
BSC011N03LS Infineon TDSON08
 
 
Item available on a request
                     
BSC014N03MS INFINEON N-MOSFET 30V 100A
BSC014N03MS INFINEON TDSON-8
  N-MOSFET 30V 20V 1,75mOhm 100A 139W SMD -55°C ~ 150°C TDSON-8 Infineon Technologies
 
Item available on a request
                     
BSC014NE2LSI N-MOSFET 100A 25V 74W 0.0014Ω
BSC014NE2LSI TDSON08
  N-MOSFET
 
Item available on a request
                     
BSC020N03LSGATMA1 Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
BSC020N03LSGATMA1 TDSON08
 
 
Item available on a request
                     
BSC022N04LS Trans MOSFET N-CH 40V 25A BSC022N04LSATMA1;
BSC022N04LS TDSON-8
 
 
Item available on a request
                     
BSC027N10NS5 Trans MOSFET N-CH 100V 23A 8-Pin TSON EP BSC027N10NS5ATMA1
BSC027N10NS5 PowerTDFN8(5x6)
 
 
Item available on a request
                     
BSC084P03NS3EGATMA1 INFINEON Trans MOSFET P-CH 30V 14.9A Automotive 8-Pin TDSON EP
BSC084P03NS3EGATMA1 INFINEON TDSON-8
 
 
Item available on a request
                     
BSC084P03NS3GATMA1 P-Channel MOSFET; 30V; 25V; 14mOhm; 14,9A; 2,5W; -55°C ~ 150°C;
BSC084P03NS3GATMA1 TDSON08
  P-MOSFET 30V 25V 14mOhm 14,9A 2,5W SMD -55°C ~ 150°C TDSON08 Infineon Technologies
 
Item available on a request
                     
BSC093N15NS5ATMA1 Trans MOSFET N-CH 150V 87A 8-Pin TDSON EP
BSC093N15NS5ATMA1 TDSON-8
 
 
Item available on a request
                     
BSL205NH6327 Infineon 2N-MOSFET 20V 2.5A 50mΩ 500mW BSL205NH6327XTSA1
BSL205NH6327 Infineon TSOP06
 
 
Item available on a request
                     
LBSS123LT1G SOT23 LRC N-Channel 100V 170mA 2V @ 1mA 6? @ 100mA,10V 225mW SOT-23(SOT-23-3) MOSFET
LBSS123LT1G SOT23 LRC SOT23
 
 
Item available on a request
                     
BSS123 UMW Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP;
BSS123 UMW SOT23
  N-MOSFET 100V 20V 10Ohm 170mA 350mW SMD -55°C ~ 150°C SOT23 UMW
 
Item available on a request
                     
BSS123K-TP Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
BSS123K-TP SOT23
 
 
Item available on a request
                     
BSS123W 100V 200mA 3Ω@10V,200mA 150mW 1.8V@250uA 7pF@50V; N Channel; 32pF@50V;; -55C~+150C; SOT-323 MOSFETs
BSS123W SOT323
  N-MOSFET 100V 3Ohm 200mA 150mW SMD -55°C ~ 150°C SOT323 Yangzhou Yangjie Electronic Technology Co., Ltd.
 
Item available on a request
                     
BSS126 SOT-23 MOSFETs ROHS
BSS126 SOT23
 
 
Item available on a request
                     
BSS138LT1G-MS SOT23 MSKSEMI SOT23
 
 
Item available on a request
                     
BSS138BK SOT23-3 SOT23
 
 
Item available on a request
                     
BSS138BKS SOT363
 
 
Item available on a request
                     
BKS138BKW SOT323
 
 
Item available on a request
                     
BSS83P Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;
BSS83P SOT23
 
 
Item available on a request
                     
BSS83PH6327-HXY SOT23 HXY MOSFET Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;
BSS83PH6327-HXY SOT23 HXY MOSFET SOT23
 
 
Item available on a request
                     
BSS84 SOT23 LGE Tranzystor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C;
BSS84 SOT23 LGE SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-08-20
Quantity of pieces: 12000
                     
BSS84 MLCCBASE Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP;
BSS84 MLCCBASE SOT23
  P-MOSFET 50V 20V 10Ohm 130mA 225mW SMD -55°C ~ 150°C SOT23 MLCCBASE
 
Item available on a request
                     
BSS84A-TP Trans MOSFET P-CH 60V 0.17A 3-Pin SOT-23
BSS84A-TP SOT23
 
 
Item available on a request
                     
BSS84 SOT323 DIOTEC P-MOSFET 50V 0.13A BSS84PW H6327XT, BSS84PWL6327XT (60V 0.15A), BSS84W-7-F BSS84PW H6327
BSS84 SOT323   DIOTEC SOT323
  P-MOSFET
 
Item available on a request
                     
BSS84PW SOT323
 
 
Item available on a request
                     
BSS84PW SOT323
 
 
Item available on a request
                     
BSS84T116 PCH -60V -0.23A SMALL SIGNAL MOS Transistors - FETs, MOSFETs - Single
BSS84T116 SOT23-3
 
 
Item available on a request
                     
BSS84XHZGG2CR 3-Pin DFN-W ROHM Trans MOSFET P-CH 60V 0.23A Automotive 3-Pin DFN-W
BSS84XHZGG2CR 3-Pin DFN-W ROHM DFN1010-3W
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.