Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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BSC010N04LS6
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP OptiMOS 6 BSC010N04LS6ATMA1
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N-MOSFET | 40V | 20V | 1,4mOhm | 285A | 150W | SMD | -55°C ~ 175°C | TDSON08 | Infineon Technologies | ||||
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Item available on a request
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BSC011N03LS Infineon
N-MOSFET 30V 100A 1.1mΩ
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BSC014N03MS INFINEON
N-MOSFET 30V 100A
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N-MOSFET | 30V | 20V | 1,75mOhm | 100A | 139W | SMD | -55°C ~ 150°C | TDSON-8 | Infineon Technologies | ||||
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Item available on a request
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BSC014NE2LSI
N-MOSFET 100A 25V 74W 0.0014Ω
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BSC020N03LSGATMA1
Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
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BSC022N04LS
Trans MOSFET N-CH 40V 25A BSC022N04LSATMA1;
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BSC027N10NS5
Trans MOSFET N-CH 100V 23A 8-Pin TSON EP BSC027N10NS5ATMA1
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BSC084P03NS3EGATMA1 INFINEON
Trans MOSFET P-CH 30V 14.9A Automotive 8-Pin TDSON EP
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Item available on a request
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BSC084P03NS3GATMA1
P-Channel MOSFET; 30V; 25V; 14mOhm; 14,9A; 2,5W; -55°C ~ 150°C;
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P-MOSFET | 30V | 25V | 14mOhm | 14,9A | 2,5W | SMD | -55°C ~ 150°C | TDSON08 | Infineon Technologies | ||||
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Item available on a request
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BSC093N15NS5ATMA1
Trans MOSFET N-CH 150V 87A 8-Pin TDSON EP
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BSL205NH6327 Infineon
2N-MOSFET 20V 2.5A 50mΩ 500mW BSL205NH6327XTSA1
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Item available on a request
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LBSS123LT1G SOT23 LRC
N-Channel 100V 170mA 2V @ 1mA 6? @ 100mA,10V 225mW SOT-23(SOT-23-3) MOSFET
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Item available on a request
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BSS123 UMW
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP;
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N-MOSFET | 100V | 20V | 10Ohm | 170mA | 350mW | SMD | -55°C ~ 150°C | SOT23 | UMW | ||||
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Item available on a request
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BSS123K-TP
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
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BSS123W
100V 200mA 3Ω@10V,200mA 150mW 1.8V@250uA 7pF@50V; N Channel; 32pF@50V;; -55C~+150C; SOT-323 MOSFETs
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N-MOSFET | 100V | 3Ohm | 200mA | 150mW | SMD | -55°C ~ 150°C | SOT323 | Yangzhou Yangjie Electronic Technology Co., Ltd. | |||||
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Item available on a request
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BSS126
SOT-23 MOSFETs ROHS
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BSS83P
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;
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Item available on a request
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BSS83PH6327-HXY SOT23 HXY MOSFET
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;
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Item available on a request
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BSS84 SOT23 LGE
Tranzystor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C;
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Item in delivery
Estimated time: 2025-08-20
Quantity of pieces: 12000
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BSS84 MLCCBASE
Transistor P-Channel MOSFET; 50V; 20V; 10Ohm; 130mA; 225mW; -55°C ~ 150°C; Equivalent: BSS84,215; BSS84LT1G; BSS84LT7G; BSS84PH6327XTSA2; BSS84PH6433XTMA1; BSS84-7-F; BSS84-TP;
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P-MOSFET | 50V | 20V | 10Ohm | 130mA | 225mW | SMD | -55°C ~ 150°C | SOT23 | MLCCBASE | ||||
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Item available on a request
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BSS84A-TP
Trans MOSFET P-CH 60V 0.17A 3-Pin SOT-23
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BSS84 SOT323 DIOTEC
P-MOSFET 50V 0.13A BSS84PW H6327XT, BSS84PWL6327XT (60V 0.15A), BSS84W-7-F BSS84PW H6327
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BSS84T116
PCH -60V -0.23A SMALL SIGNAL MOS Transistors - FETs, MOSFETs - Single
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BSS84XHZGG2CR 3-Pin DFN-W ROHM
Trans MOSFET P-CH 60V 0.23A Automotive 3-Pin DFN-W
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.