Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
G3035L Transistor MOSFET; SOT-23-3L; P-Channel; NO ESD; -30V; -4.1A; 1.4W; -1.5V; 48mΩ; 60mΩ AO3407; DMP3056L; G3035 GOFORD
G3035L SOT23-3
 
 
Item available on a request
                     
KO3407 SOT23 KEXIN ODPOWIEDNIK: AO3407; DMP3056L; G3035 GOFORD; KO3407; YJL3407C;
KO3407 SOT23 KEXIN SOT23
 
 
Item available on a request
                     
AO3407 SOT-23 XBLW ODPOWIEDNIK: KO3407; YJL3407C; AO3407;
AO3407 SOT-23 XBLW SOT23
 
 
Item available on a request
                     
AO3407A Transistor P-Channel MOSFET; 30V; 20V; 87mOhm; 4,1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3407A Alpha&Omega Semiconductor AOS
AO3407A SOT23
  P-MOSFET 30V 20V 87mOhm 4,1A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
AO3407A SOT-23 MOSFETs ROHS
AO3407A SOT23
 
 
Item available on a request
                     
AO3409A Transistor P-Channel MOSFET; 30V; 20V; 200mOhm; 2,6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3409 Alpha&Omega Semiconductor AOS;
AO3409A SOT23
  P-MOSFET 30V 20V 200mOhm 2,6A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
AO3413A Transistor P-Channel MOSFET; 20V; 8V; 80mOhm; 3A; 1,4W; -55°C ~ 150°C; Equivalent: AO3413 Alpha&Omega Semiconductor AOS;
AO3413A SOT23
  P-MOSFET 20V 8V 80mOhm 3A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
AO3414A Transistor N-Channel MOSFET; 20V; 8V; 57mOhm; 4,2A; 1,4W; -55°C ~ 150°C; Equivalent: AO3414 Alpha&Omega Semiconductor AOS;
AO3414A SOT23
  N-MOSFET 20V 8V 57mOhm 4,2A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
AO3415A Transistor P-Channel MOSFET; 20V; 8V; 65mOhm; 5A; 1,5W; -55°C ~ 150°C;
AO3415A SOT23
  P-MOSFET 20V 8V 65mOhm 5A 1,5W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
AO3416A Transistor N-Channel MOSFET; 20V; 8V; 51mOhm; 6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3416 Alpha&Omega Semiconductor AOS;
AO3416A SOT23
  N-MOSFET 20V 8V 51mOhm 6A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
G2312 Transistor MOSFET; SOT-23; N-Channel; NO ESD; 20V; 5A; 1.25W; 0.7; V; 12mΩ; 13mΩ AO3420; DMG3414U
G2312 SOT23
 
 
Item available on a request
                     
AO3422 N-MOSFET 2.1A 55V
AO3422 SOT23
  N-MOSFET 55V 12V 210mOhm 2,1A 1,25W SMD -55°C ~ 150°C SOT23 ALPHA&OMEGA
 
Item available on a request
                     
AO3423A Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 2A; 1,4W; -55°C ~ 150°C; Equivalent: AO3423 Alpha&Omega Semiconductor AOS;
AO3423A SOT23
  P-MOSFET 20V 12V 150mOhm 2A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
AO3442A Transistor N-Channel MOSFET; 100V; 20V; 1,2Ohm; 1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3442 Alpha&Omega Semiconductor AOS;
AO3442A SOT23
  N-MOSFET 100V 20V 1,2Ohm 1A 1,4W SMD -55°C ~ 150°C SOT23
 
Item available on a request
                     
4435 Transistor MOSFET; SOP-8; P-Channel; NO ESD; -30V; -11A; 2.5W; -1.4V; 12mΩ; 18mΩ AO4435; DMG4435SSS
4435 SOP08
 
 
Item available on a request
                     
AO4485 Transistor P-Channel MOSFET; 40V; 10V; 15mOhm; 10A; 3,1W; -55°C~150°C;
AO4485 SOIC08
  MOSFET 40V 10V 20V 15mOhm 10A 3,1W SMD -55°C ~ 150°C SOIC08 ALPHA&OMEGA
 
Item available on a request
                     
AO4629 Transistor N/P-Channel MOSFET; 30V; 20V; 48mOhm/74mOhm; 6A/5,5A; 2W; -55°C ~ 150°C;
AO4629 SOP08
  N/P-MOSFET 30V 20V 74mOhm 6A 2W SMD -55°C ~ 150°C SOP08 ALPHA&OMEGA
 
Item available on a request
                     
G170P03S2 Transistor MOSFET; SOP-8; DUAL; P+P-Channel; NO ESD; -30V; -9A; 1.4W; -1.4V; 15mΩ; 20mΩ AO4805; AO4813
G170P03S2 SOP08
 
 
Item available on a request
                     
AO4832 Transistor 2xN-Channel MOSFET; 30V; 20V; 19mOhm; 10A; 2W; -55°C ~ 150°C;
AO4832 SOP08
 
 
Item available on a request
                     
AO6602 Trans MOSFET N/P-CH 30V 3.5A/2.7A 6-Pin TSOP T/R
AO6602 TSOP06
  N/P-MOSFET 30V 20V 170mOhm 3,5A 1,15W SMD -55°C ~ 150°C TSOP06 ALPHA&OMEGA
 
Item available on a request
                     
AO7401 Trans MOSFET P-CH 30V 1.4A 3-Pin SC-70
AO7401 SC70-3
 
 
Item available on a request
                     
AOB240L Trans MOSFET N-CH 40V 105A 3-Pin(2+Tab) D2PAK T/R
AOB240L D2PAK
 
 
Item available on a request
                     
AOB2500L Transistor N-Channel MOSFET; 150V; 20V; 12,3mOhm; 152A; 375W; -55°C ~ 175°C;
AOB2500L TO263 (D2PAK)
  N-MOSFET 150V 20V 12,3Ohm 152A 375W SMD -55°C ~ 175°C TO263 (D2PAK) ALPHA&OMEGA
 
Item available on a request
                     
AOB260L Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK
AOB260L D2PAK
 
 
Item available on a request
                     
18N20 Transistor MOSFET; N-Channel; TO252-2(DPAK); 200V; 18A; 65.8W; 160mΩ@10V,9A; 3V@250uA AOD2210;
18N20 TO252
 
 
Item available on a request
                     
AOD2N60A Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
AOD2N60A  
 
 
Item available on a request
                     
AOK40B65M3 Trans IGBT Chip N-CH 650V 80A 300000mW 3-Pin(3+Tab) TO-247
AOK40B65M3 TO247
 
 
Item available on a request
                     
AOK60B65H2AL Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
AOK60B65H2AL  TO247
 
 
Item available on a request
                     
G66 Transistor MOSFET; DFN2*2-6L; P-Channel; NO ESD; -16V; -5.8A; 1.7W; -0.7V; ; 32mΩ~45mΩ; AON2403; 1216D2 GOFORD; G69A GOFORD
G66 DFN06
 
 
Item available on a request
                     
G12P03D3 Transistor MOSFET; DFN3*3-8L; P-Channel; NO ESD; -30V; -12A; 3W; -1.6V; 17mΩ; 24.5mΩ AON3419
G12P03D3 DFN08(3x3)
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.