Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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G3035L
Transistor MOSFET; SOT-23-3L; P-Channel; NO ESD; -30V; -4.1A; 1.4W; -1.5V; 48mΩ; 60mΩ AO3407; DMP3056L; G3035 GOFORD
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Item available on a request
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KO3407 SOT23 KEXIN
ODPOWIEDNIK: AO3407; DMP3056L; G3035 GOFORD; KO3407; YJL3407C;
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Item available on a request
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AO3407 SOT-23 XBLW
ODPOWIEDNIK: KO3407; YJL3407C; AO3407;
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Item available on a request
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AO3407A
Transistor P-Channel MOSFET; 30V; 20V; 87mOhm; 4,1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3407A Alpha&Omega Semiconductor AOS
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P-MOSFET | 30V | 20V | 87mOhm | 4,1A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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AO3407A
SOT-23 MOSFETs ROHS
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Item available on a request
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AO3409A
Transistor P-Channel MOSFET; 30V; 20V; 200mOhm; 2,6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3409 Alpha&Omega Semiconductor AOS;
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P-MOSFET | 30V | 20V | 200mOhm | 2,6A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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AO3413A
Transistor P-Channel MOSFET; 20V; 8V; 80mOhm; 3A; 1,4W; -55°C ~ 150°C; Equivalent: AO3413 Alpha&Omega Semiconductor AOS;
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P-MOSFET | 20V | 8V | 80mOhm | 3A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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AO3414A
Transistor N-Channel MOSFET; 20V; 8V; 57mOhm; 4,2A; 1,4W; -55°C ~ 150°C; Equivalent: AO3414 Alpha&Omega Semiconductor AOS;
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N-MOSFET | 20V | 8V | 57mOhm | 4,2A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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AO3415A
Transistor P-Channel MOSFET; 20V; 8V; 65mOhm; 5A; 1,5W; -55°C ~ 150°C;
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P-MOSFET | 20V | 8V | 65mOhm | 5A | 1,5W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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AO3416A
Transistor N-Channel MOSFET; 20V; 8V; 51mOhm; 6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3416 Alpha&Omega Semiconductor AOS;
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N-MOSFET | 20V | 8V | 51mOhm | 6A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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G2312
Transistor MOSFET; SOT-23; N-Channel; NO ESD; 20V; 5A; 1.25W; 0.7; V; 12mΩ; 13mΩ AO3420; DMG3414U
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Item available on a request
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AO3422
N-MOSFET 2.1A 55V
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N-MOSFET | 55V | 12V | 210mOhm | 2,1A | 1,25W | SMD | -55°C ~ 150°C | SOT23 | ALPHA&OMEGA | ||||
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Item available on a request
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AO3423A
Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 2A; 1,4W; -55°C ~ 150°C; Equivalent: AO3423 Alpha&Omega Semiconductor AOS;
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P-MOSFET | 20V | 12V | 150mOhm | 2A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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AO3442A
Transistor N-Channel MOSFET; 100V; 20V; 1,2Ohm; 1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3442 Alpha&Omega Semiconductor AOS;
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N-MOSFET | 100V | 20V | 1,2Ohm | 1A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | |||||
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Item available on a request
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4435
Transistor MOSFET; SOP-8; P-Channel; NO ESD; -30V; -11A; 2.5W; -1.4V; 12mΩ; 18mΩ AO4435; DMG4435SSS
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Item available on a request
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AO4485
Transistor P-Channel MOSFET; 40V; 10V; 15mOhm; 10A; 3,1W; -55°C~150°C;
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MOSFET | 40V | 10V | 20V | 15mOhm | 10A | 3,1W | SMD | -55°C ~ 150°C | SOIC08 | ALPHA&OMEGA | |||
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Item available on a request
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AO4629
Transistor N/P-Channel MOSFET; 30V; 20V; 48mOhm/74mOhm; 6A/5,5A; 2W; -55°C ~ 150°C;
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N/P-MOSFET | 30V | 20V | 74mOhm | 6A | 2W | SMD | -55°C ~ 150°C | SOP08 | ALPHA&OMEGA | ||||
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Item available on a request
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G170P03S2
Transistor MOSFET; SOP-8; DUAL; P+P-Channel; NO ESD; -30V; -9A; 1.4W; -1.4V; 15mΩ; 20mΩ AO4805; AO4813
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Item available on a request
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AO4832
Transistor 2xN-Channel MOSFET; 30V; 20V; 19mOhm; 10A; 2W; -55°C ~ 150°C;
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Item available on a request
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AO6602
Trans MOSFET N/P-CH 30V 3.5A/2.7A 6-Pin TSOP T/R
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N/P-MOSFET | 30V | 20V | 170mOhm | 3,5A | 1,15W | SMD | -55°C ~ 150°C | TSOP06 | ALPHA&OMEGA | ||||
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Item available on a request
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AO7401
Trans MOSFET P-CH 30V 1.4A 3-Pin SC-70
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Item available on a request
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AOB240L
Trans MOSFET N-CH 40V 105A 3-Pin(2+Tab) D2PAK T/R
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Item available on a request
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AOB2500L
Transistor N-Channel MOSFET; 150V; 20V; 12,3mOhm; 152A; 375W; -55°C ~ 175°C;
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N-MOSFET | 150V | 20V | 12,3Ohm | 152A | 375W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | ALPHA&OMEGA | ||||
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Item available on a request
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AOB260L
Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK
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Item available on a request
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18N20
Transistor MOSFET; N-Channel; TO252-2(DPAK); 200V; 18A; 65.8W; 160mΩ@10V,9A; 3V@250uA AOD2210;
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Item available on a request
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AOD2N60A
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
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Item available on a request
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AOK40B65M3
Trans IGBT Chip N-CH 650V 80A 300000mW 3-Pin(3+Tab) TO-247
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Item available on a request
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AOK60B65H2AL
Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
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Item available on a request
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G66
Transistor MOSFET; DFN2*2-6L; P-Channel; NO ESD; -16V; -5.8A; 1.7W; -0.7V; ; 32mΩ~45mΩ; AON2403; 1216D2 GOFORD; G69A GOFORD
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Item available on a request
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G12P03D3
Transistor MOSFET; DFN3*3-8L; P-Channel; NO ESD; -30V; -12A; 3W; -1.6V; 17mΩ; 24.5mΩ AON3419
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.