Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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AON7230
Trans MOSFET N-CH 100V 47A 8-Pin DFN EP T/R
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N-MOSFET | 100V | 20V | 22mOhm | 47A | 54W | SMD | -55°C ~ 150°C | DFN08 | ALPHA&OMEGA | ||||
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Item available on a request
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AONR21117
P-MOSFET 20V 34A
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Item available on a request
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Item available on a request
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AONS21357
Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
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P-MOSFET | 30V | 25V | 7,8mOhm | 36A | 19W | SMD | -55°C ~ 150°C | DFN08 | ALPHA&OMEGA | ||||
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Item available on a request
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Item available on a request
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AOT12N50
Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C;
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Item available on a request
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N-MOSFET | 500V | 30V | 520mOhm | 12A | 250W | THT | -55°C ~ 150°C | TO220 | ALPHA&OMEGA | ||
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Item in delivery
Estimated time: 2025-12-30
Quantity of pieces: 50
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AOT2500L
N-MOSFET 152A 150V 375W 0.0065Ω
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N-MOSFET | |||||||||||||
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Item available on a request
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AOTF11S65L
N-MOSFET 650V 11A
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Item available on a request
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G90P04F
Transistor MOSFET; TO-220F; P-Channel; NO ESD; -40V; -68A; 83W; -1.5V; 6mΩ; 8mΩ AOTF4185;
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Item available on a request
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AOTF4N90
N-MOSFET 4A 900V 37W 3.6Ω
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N-MOSFET | 900V | 30V | 3,6Ohm | 4A | 37W | THT | -55°C ~ 150°C | TO220iso | ALPHA&OMEGA | ||||
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Item available on a request
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AOTF8N80
Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-220F
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N-MOSFET | 800V | 30V | 1,63Ohm | 7,4A | 50W | THT | -55°C ~ 150°C | TO220iso | ALPHA&OMEGA | ||||
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Item available on a request
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AOTL66810
Transistor N-Channel MOSFET; 80V; +/-20V; 1,25mOhm; 420A; 425W; -55°C~175°C;
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N-MOSFET | 80V | 20V | 1,25mOhm | 420A | 425W | SMD | -55°C ~ 175°C | 8-PowerSFN | ALPHA&OMEGA | ||||
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Item available on a request
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AOY2610E
Transistor N-Channel MOSFET; 60V; 20V; 9,5mOhm; 36,5A; 23,5W; -55°C~150°C;
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N-MOSFET | 60V | 20V | 9,5mOhm | 36A | 23,5W | THT | -55°C ~ 150°C | TO251 (IPACK) | ALPHA&OMEGA | ||||
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Item available on a request
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AP0704GMT
AP0704GMT-HF AP0704GMT-HF-3
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Item available on a request
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AP2310GN SOT23 TECH PUBLIC
SOT-23 MOSFETs RoHS Podobny do: AP2310GN-HF-3; VBsemi AP2310GN-VB;
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Item available on a request
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AP2311GN
SOT-23-3 MOSFETs ROHS
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Item available on a request
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AP2311GN JGSEMI
Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 2A; 1,56W; -55°C ~ 125°C; Equivalent: AP2311GN-HF-3;
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P-MOSFET | 60V | 20V | 240mOhm | 2A | 1,56W | SMD | -55°C ~ 125°C | SOT23 | JGSEMI | ||||
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Item available on a request
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AP9477GK-HF-3 ADVANCED POWER
N-MOSFET 60V 4.1A 2.8W
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N-MOSFET | 60V | 20V | 110mOhm | 4,1A | 2,8W | SMD | -55°C ~ 150°C | SOT223 | Advanced Power Electronics Corp. | ||||
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Item available on a request
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APT68GA60LD40
Transistor IGBT; PT; 600V; 300V; 198nC; 68A; 520W; -55°C~150°C;
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IGBT | 600V | 30V | 4,7Ohm | 68A | 520W | THT | -55°C ~ 150°C | TO264 | MICROCHIP | ||||
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Item available on a request
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AUIRF3805S-7P International Rectifier
MOSFET N-CH 55V 240A Automotive
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N-MOSFET | 55V | 20V | 2,6mOhm | 240A | 300W | SMD | -55°C ~ 175°C | D2PAK/7 | Infineon Technologies | ||||
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Item available on a request
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AUIRF7103Q IR
N-MOSFET 50V 3A Automotive
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Item available on a request
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AUIRF7313QTR
Transistor 2xN-Channel MOSFET; 30V; 20V; 46mOhm; 6,9A; 2,4W; -55°C ~ 175°C;
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2xN-MOSFET | 30V | 20V | 46mOhm | 6,9A | 2,4W | SMD | -55°C ~ 175°C | SOP08 | International Rectifier | ||||
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Item available on a request
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AUIRFS8409-7P International Rectifier
N-MOSFET 40V 240A 0.75mΩ 375W
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N-MOSFET | 40V | 20V | 0,75mOhm | 522A | 375W | SMD | -55°C ~ 175°C | D2PAK/7 | International Rectifier | ||||
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Item available on a request
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AUIRGDC0250 INFINEON
Trans IGBT Chip N-CH 1200V 141A 543000mW Automotive 3-Pin(3+Tab) TO-220 Tube
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Item available on a request
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AUIRL7732S2TR INFINEON
Trans MOSFET N-CH Si 40V 14A Automotive 7-Pin Direct-FET SC T/R
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Item available on a request
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AUIRLR2905Z International Rectifier
Tranzystor N-Channel MOSFET; 55V; 16V; 22,5mOhm; 60A; 110W; -55°C ~ 175°C; OBSOLETE; Odpowiednik: AUIRLR2905ZTR; AUIRLR2905ZTRL; TUBE AUIRLR2905Z; TAPE&REEL AUIRLR2905ZTRL;
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N-MOSFET | 55V | 16V | 22,5mOhm | 60A | 110W | SMD | -55°C ~ 175°C | TO252 (DPACK) | International Rectifier | ||||
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Item available on a request
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AUIRLR3636 International Rectifier
MOSFET N-CH 60V 99A Automotive
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Item available on a request
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BF245B
N-FET 15mA 30V 350mW *OBSOLETE
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N-FET | 30V | 30V | 30V | 15mA | 300mW | THT | -65°C ~ 150°C | TO92 | |||||
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Item available on a request
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BF998 smd
N-MOSFET 2gate 1mA 12V 1GHz
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N-MOSFET | 12V | 20V | 30mA | 200mW | SMD | -65°C ~ 150°C | SOT143 | Infineon Technologies | |||||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.