Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
AON7230 Trans MOSFET N-CH 100V 47A 8-Pin DFN EP T/R
AON7230 DFN08
  N-MOSFET 100V 20V 22mOhm 47A 54W SMD -55°C ~ 150°C DFN08 ALPHA&OMEGA
 
Item available on a request
                     
AONR21117 P-MOSFET 20V 34A
AONR21117 DFN08
 
 
Item available on a request
                     
AONR66820  
 
 
Item available on a request
                     
AONS21357 Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
AONS21357 DFN08
  P-MOSFET 30V 25V 7,8mOhm 36A 19W SMD -55°C ~ 150°C DFN08 ALPHA&OMEGA
 
Item available on a request
                     
AONS66811  
 
 
Item available on a request
                     
AOT12N50 Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C;
AOT12N50 TO220
                         
Item available on a request
N-MOSFET 500V 30V 520mOhm 12A 250W THT -55°C ~ 150°C TO220 ALPHA&OMEGA
                           
Item in delivery
Estimated time: 2025-12-30
Quantity of pieces: 50
                     
AOT2500L N-MOSFET 152A 150V 375W 0.0065Ω
AOT2500L TO220
  N-MOSFET
 
Item available on a request
                     
AOTF11S65L N-MOSFET 650V 11A
AOTF11S65L TO220FP
 
 
Item available on a request
                     
G90P04F Transistor MOSFET; TO-220F; P-Channel; NO ESD; -40V; -68A; 83W; -1.5V; 6mΩ; 8mΩ AOTF4185;
G90P04F TO220F
 
 
Item available on a request
                     
AOTF4N90 N-MOSFET 4A 900V 37W 3.6Ω
AOTF4N90 TO220iso
  N-MOSFET 900V 30V 3,6Ohm 4A 37W THT -55°C ~ 150°C TO220iso ALPHA&OMEGA
 
Item available on a request
                     
AOTF8N80 Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-220F
AOTF8N80 TO220iso
  N-MOSFET 800V 30V 1,63Ohm 7,4A 50W THT -55°C ~ 150°C TO220iso ALPHA&OMEGA
 
Item available on a request
                     
AOTL66810 Transistor N-Channel MOSFET; 80V; +/-20V; 1,25mOhm; 420A; 425W; -55°C~175°C;
AOTL66810  
  N-MOSFET 80V 20V 1,25mOhm 420A 425W SMD -55°C ~ 175°C 8-PowerSFN ALPHA&OMEGA
 
Item available on a request
                     
AOY2610E Transistor N-Channel MOSFET; 60V; 20V; 9,5mOhm; 36,5A; 23,5W; -55°C~150°C;
AOY2610E TO251 (IPACK)
  N-MOSFET 60V 20V 9,5mOhm 36A 23,5W THT -55°C ~ 150°C TO251 (IPACK) ALPHA&OMEGA
 
Item available on a request
                     
AP0704GMT AP0704GMT-HF AP0704GMT-HF-3
AP0704GMT PMPAK5x6
 
 
Item available on a request
                     
AP2310GN SOT23 TECH PUBLIC SOT-23 MOSFETs RoHS Podobny do: AP2310GN-HF-3; VBsemi AP2310GN-VB;
AP2310GN SOT23 TECH PUBLIC SOT23
 
 
Item available on a request
                     
AP2311GN SOT-23-3 MOSFETs ROHS
AP2311GN SOT23
 
 
Item available on a request
                     
AP2311GN JGSEMI Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 2A; 1,56W; -55°C ~ 125°C; Equivalent: AP2311GN-HF-3;
AP2311GN JGSEMI SOT23
  P-MOSFET 60V 20V 240mOhm 2A 1,56W SMD -55°C ~ 125°C SOT23 JGSEMI
 
Item available on a request
                     
AP9477GK-HF-3 ADVANCED POWER N-MOSFET 60V 4.1A 2.8W
AP9477GK-HF-3 ADVANCED POWER SOT223
  N-MOSFET 60V 20V 110mOhm 4,1A 2,8W SMD -55°C ~ 150°C SOT223 Advanced Power Electronics Corp.
 
Item available on a request
                     
APT68GA60LD40 Transistor IGBT; PT; 600V; 300V; 198nC; 68A; 520W; -55°C~150°C;
APT68GA60LD40 TO264
  IGBT 600V 30V 4,7Ohm 68A 520W THT -55°C ~ 150°C TO264 MICROCHIP
 
Item available on a request
                     
AUIRF3805S-7P International Rectifier MOSFET N-CH 55V 240A Automotive
AUIRF3805S-7P International Rectifier D2PAK/7
  N-MOSFET 55V 20V 2,6mOhm 240A 300W SMD -55°C ~ 175°C D2PAK/7 Infineon Technologies
 
Item available on a request
                     
AUIRF7103Q IR N-MOSFET 50V 3A Automotive
AUIRF7103Q IR SOP08
 
 
Item available on a request
                     
AUIRF7313QTR Transistor 2xN-Channel MOSFET; 30V; 20V; 46mOhm; 6,9A; 2,4W; -55°C ~ 175°C;
AUIRF7313QTR SOP08
  2xN-MOSFET 30V 20V 46mOhm 6,9A 2,4W SMD -55°C ~ 175°C SOP08 International Rectifier
 
Item available on a request
                     
AUIRFR9024NTRPBF-VB TO252 VBsemi Elec TO252
 
 
Item available on a request
                     
AUIRFS8409-7P International Rectifier N-MOSFET 40V 240A 0.75mΩ 375W
AUIRFS8409-7P International Rectifier D2PAK/7
  N-MOSFET 40V 20V 0,75mOhm 522A 375W SMD -55°C ~ 175°C D2PAK/7 International Rectifier
 
Item available on a request
                     
AUIRGDC0250 INFINEON Trans IGBT Chip N-CH 1200V 141A 543000mW Automotive 3-Pin(3+Tab) TO-220 Tube
AUIRGDC0250 INFINEON TO220
 
 
Item available on a request
                     
AUIRL7732S2TR INFINEON Trans MOSFET N-CH Si 40V 14A Automotive 7-Pin Direct-FET SC T/R
AUIRL7732S2TR INFINEON  
 
 
Item available on a request
                     
AUIRLR2905Z International Rectifier Tranzystor N-Channel MOSFET; 55V; 16V; 22,5mOhm; 60A; 110W; -55°C ~ 175°C; OBSOLETE; Odpowiednik: AUIRLR2905ZTR; AUIRLR2905ZTRL; TUBE AUIRLR2905Z; TAPE&REEL AUIRLR2905ZTRL;
AUIRLR2905Z International Rectifier TO252 (DPACK)
  N-MOSFET 55V 16V 22,5mOhm 60A 110W SMD -55°C ~ 175°C TO252 (DPACK) International Rectifier
 
Item available on a request
                     
AUIRLR3636 International Rectifier MOSFET N-CH 60V 99A Automotive
AUIRLR3636 International Rectifier DPAK
 
 
Item available on a request
                     
BF245B N-FET 15mA 30V 350mW *OBSOLETE
BF245B TO92
  N-FET 30V 30V 30V 15mA 300mW THT -65°C ~ 150°C TO92
 
Item available on a request
                     
BF998 smd N-MOSFET 2gate 1mA 12V 1GHz
BF998 smd SOT143
  N-MOSFET 12V 20V 30mA 200mW SMD -65°C ~ 150°C SOT143 Infineon Technologies
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.