Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
FDMT80080DC Trans MOSFET N-CH Si 80V 36A 8-Pin QFN EP
FDMT80080DC || FDMT80080DC QFN-08
Manufacturer:
Fairchild
Manufacturer part number:
FDMT80080DC
Case style:
QFN-08
 
External warehouse:
3000 pcs.
Quantity of pieces 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,5732
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
IPL65R230C7AUMA1 Transistor N-Channel MOSFET; 650V; 20V; 230mOhm; 10A; 67W; -40°C~150°C;
IPL65R230C7AUMA1 || IPL65R230C7AUMA1 VSON04
Manufacturer:
Infineon
Manufacturer part number:
IPL65R230C7AUMA1
Case style:
VSON04
 
External warehouse:
3000 pcs.
Quantity of pieces 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,0214
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
N-MOSFET 650V 20V 230mOhm 10A 67W SMD -40°C ~ 150°C VSON04 INFINEON
IPN80R2K4P7ATMA1 Transistor N-Channel MOSFET; 800V; +/-20V; 2,4Ohm; 2,4A; 6,3W; -55°C~150°C;
IPN80R2K4P7ATMA1 || IPN80R2K4P7ATMA1 SOT223
Manufacturer:
Infineon
Manufacturer part number:
IPN80R2K4P7ATMA1
Case style:
SOT223
 
External warehouse:
27000 pcs.
Quantity of pieces 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2629
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
N-MOSFET 800V 20V 2,4Ohm 2,4A 6,3W SMD -55°C ~ 150°C SOT223 INFINEON
IPP50R280CEXKSA1 Transistor N-Channel MOSFET; 500V; 20V; 280mOhm; 13A; 92W; -55°C~150°C;
IPP50R280CEXKSA1 || IPP50R280CEXKSA1 TO220
Manufacturer:
Infineon
Manufacturer part number:
IPP50R280CEXKSA1
Case style:
TO220
 
External warehouse:
500 pcs.
Quantity of pieces 500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4197
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Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
N-MOSFET 500V 13V 20V 280mOhm 13A 92W THT -55°C ~ 150°C TO220 INFINEON
IPT029N08N5ATMA1 Transistor N-Channel MOSFET; 80V; 20V; 2,9mOhm; 52A; 168W; -55°C~175°C;
IPT029N08N5ATMA1 || IPT029N08N5ATMA1 HSOF8
Manufacturer:
Infineon
Manufacturer part number:
IPT029N08N5ATMA1
Case style:
HSOF8
 
External warehouse:
2000 pcs.
Quantity of pieces 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,7674
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
N-MOSFET 80V 6V 20V 2,9mOhm 52A 168W SMD -55°C ~ 175°C HSOF8 INFINEON
IPU80R900P7AKMA1 Transistor N-Channel MOSFET; 800V; 20V; 900mOhm; 6A; 45W; -55°C~150°C;
IPU80R900P7AKMA1 || IPU80R900P7AKMA1 TO251 (IPACK)
Manufacturer:
Infineon
Manufacturer part number:
IPU80R900P7AKMA1
Case style:
TO251 (IPACK)
 
External warehouse:
1500 pcs.
Quantity of pieces 1500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4766
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Packaging:
1500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
N-MOSFET 800V 10V 20V 900mOhm 6A 45W THT -55°C ~ 150°C TO251 (IPACK) INFINEON
STB100N10F7 N-channel 100 V 0.0068 Ohm Surface Mount Power Mosfet - D2PAK-3
STB100N10F7 || STB100N10F7  
Manufacturer:
ST
Manufacturer part number:
STB100N10F7
Case style:
D2PAK
 
External warehouse:
2000 pcs.
Quantity of pieces 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,2381
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
 
Manufacturer:
ST
Manufacturer part number:
STB100N10F7
Case style:
D2PAK
 
External warehouse:
1000 pcs.
Quantity of pieces 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,2382
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
 
Manufacturer:
ST
Manufacturer part number:
STB100N10F7
Case style:
D2PAK
 
External warehouse:
895 pcs.
Quantity of pieces 5+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,5693
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Packaging:
5
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
STF100N6F7 Trans MOSFET N-CH 60V 46A 3-Pin(3+Tab) TO-220FP
STF100N6F7 || STF100N6F7  
Manufacturer:
ST
Manufacturer part number:
STF100N6F7
Case style:
 
 
External warehouse:
950 pcs.
Quantity of pieces 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6796
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
 
Manufacturer:
ST
Manufacturer part number:
STF100N6F7
Case style:
 
 
External warehouse:
1000 pcs.
Quantity of pieces 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6915
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
BSC12DN20NS3G Transistor N-Channel MOSFET; 200V; +/-20V; 125mOhm; 11,3A; 50W; -55°C~150°C; Substitute: BSC12DN20NS3GATMA1;
BSC12DN20NS3GATMA1 || BSC12DN20NS3G TDSON08
Manufacturer:
Infineon
Manufacturer part number:
BSC12DN20NS3GATMA1
Case style:
TDSON08
 
External warehouse:
5000 pcs.
Quantity of pieces 5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5178
Packaging:
5000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
N-MOSFET 200V 10V 20V 125mOhm 11,3A 50W SMD -55°C ~ 150°C TDSON08 INFINEON
IPW65R080CFDA Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1 || IPW65R080CFDA  
Manufacturer:
Infineon
Manufacturer part number:
IPW65R080CFDAFKSA1
Case style:
 
 
External warehouse:
480 pcs.
Quantity of pieces 240+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 4,0180
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Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
IPD50N06S4L12ATMA1 Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK
IPD50N06S4L12ATMA2 || IPD50N06S4L12ATMA1  
Manufacturer:
Infineon
Manufacturer part number:
IPD50N06S4L12ATMA2
Case style:
 
 
External warehouse:
2500 pcs.
Quantity of pieces 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2858
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
IPA040N06NXKSA1 Trans MOSFET N-CH 60V 69A 3-Pin(3+Tab) TO-220FP
IPA040N06NXKSA1 || IPA040N06NXKSA1  
Manufacturer:
Infineon
Manufacturer part number:
IPA040N06NXKSA1
Case style:
TO220FP
 
External warehouse:
500 pcs.
Quantity of pieces 250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5312
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
IPB065N15N3GATMA1 Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK
IPB065N15N3GATMA1 || IPB065N15N3GATMA1  
Manufacturer:
Infineon
Manufacturer part number:
IPB065N15N3GATMA1
Case style:
D2PAK
 
External warehouse:
3000 pcs.
Quantity of pieces 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,2227
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
                     
SOT523
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
                     
LM1012T SOT523 LEIDITECH Tranzystor N-Channel MOSFET; 20V; 8V; 150mOhm; 800mA; 150mW; -55°C ~ 150°C; ODPOWIEDNIK: DMG1012T-7, RE1C002UNTCL;
LM1012T SOT523 LEIDITECH SOT523
 
 
Item available on a request
                     
LMTL2N02 SOT23 LEIDITECH Tranzystor N-Channel MOSFET; 20V; 12V; 40mOhm; 6A; 1,25W; -55°C ~ 150°C; ODPOWIEDNIK: IRLML2502PBF; Si2302CDS-T1-E3; FDN327N; FDN337N;
LMTL2N02 SOT23 LEIDITECH SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
                     
SE3401 SOT23 LEIDITECH Tranzystor P-Channel MOSFET; 30V; 12V; 90mOhm; 4,2A; 1,2W; -55°C ~ 150°C; ODPOWIEDNIK: IRLML5203PBF; AO3401A; IRLML5203TR; IRLML5203TRPBF; SQ2303ES; NVTR4502P; IRLML9303; STR2P3LLH6; DMP3099L-7; DMG3401LSN-7;
SE3401 SOT23 LEIDITECH SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 3000
                     
DI040N03PT DIOTEC SEMICONDUCTOR Tranzystor: N-MOSFET; unipolarny; 30V; 40A; Idm: 120A; 25W; QFN3X3
DI040N03PT DIOTEC SEMICONDUCTOR  
 
 
Item available on a request
                     
CMF75NF75 TO220F CMOS TO220F
 
 
Item available on a request
                     
CMB75NF75 TO263 CMOS TO263
 
 
Item available on a request
                     
IRLML2244 SOT23
 
 
Item available on a request
                     
GT700P08D3 Transistor MOSFET; DFN3*3-8L; P-Channel; NO ESD; -80V; -16A; 69W; -2.5V; 57mΩ
GT700P08D3 DFN08(3x3)
 
 
Item available on a request
                     
03N06 N-Channel 60V 3A 1.4V @ 250uA 105m? @ 3A,10V 1.7W SOT-23-3L MOSFET
03N06 SOT23-3
 
 
Item available on a request
                     
20N06 N-MOSFET 20A 60V 40W 0.037Ω TO-252
20N06 TO252
  N-MOSFET
 
Item available on a request
                     
2302 N-MOSFET 4.3A 20V 1W 0.27Ω SOT-23
2302 SOT23
  N-MOSFET
 
Item available on a request
                     
2N6039G ONS Transistor Darlington NPN 80V 4A
2N6039G ONS TO225 (=TO126-3)
 
 
Item available on a request
                     
2N6040G Trans Darlington PNP 60V 8A 75W
2N6040G TO220
  PNP 8A 75W THT -65°C ~ 150°C TO220 ONSEMI
 
Item available on a request
                     
2N7000 TO92(BULK) TO92
 
 
Item available on a request
                     
2N7002 SOT23 CJ Transistor N-Channel MOSFET; 60V; 7,5Ohm; 115mA; 225mW; -55°C ~ 150°C;
2N7002 SOT23 CJ SOT23
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.