Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
FDA50N50 N-MOSFET 48A 500V 625W 0.105Ω
FDA50N50 TO 3P
  N-MOSFET 500V 20V 105mOhm 48A 625W THT -55°C ~ 150°C TO 3P ON SEMICONDUCTOR
 
Item available on a request
                     
FDB070AN06A0 N-MOSFET 80A 60V 175W 0.007Ω
FDB070AN06A0 D2PAK
  N-MOSFET 60V 20V 7mOhm 80A 175W SMD -55°C ~ 175°C D2PAK Fairchild
 
Item available on a request
                     
FDC5614P 60V 3A 105m?@10V,3A 1.6W 3V@250uA 1 Piece P-Channel MOSFET YFW3P06LI
FDC5614P SSOT6L
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-28
Quantity of pieces: 1000
                     
FDC637AN Trans MOSFET N-CH 20V 6.2A 6-Pin SuperSOT T/R ONSEMI
FDC637AN  
 
 
Item available on a request
                     
FDC6420C SSOT6 TECH PUBLIC Transistor N/P-Channel MOSFET; 20V; 12V; 106mOhm/184mOhm; 3A/2,2A; 960mW; -55°C
FDC6420C SSOT6 TECH PUBLIC SSOT6L
 
 
Item available on a request
                     
FDC658P P-MOSFET 4A 30V 0.8W 0.05Ω
FDC658P TSOT23-6
  P-MOSFET 30V 20V 50mOhm 4A 800mW SMD -55°C ~ 150°C TSOT23-6 Fairchild
 
Item available on a request
                     
FDD3682 N-MOSFET 32A 100V 95mW 0.032Ω
FDD3682 TO252
  N-MOSFET 100V 20V 90mOhm 32A 95W SMD -55°C ~ 175°C TO252 Fairchild
 
Item available on a request
                     
18N10 Transistor MOSFET; TO-252; N-Channel; NO ESD; 100V; 25A; 62.5W; 2V; 37mΩ; 42mΩ FDD3690
18N10 TO252
 
 
Item available on a request
                     
FDD5612 ON Semiconductor N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
FDD5612 ON Semiconductor DPAK
  N-MOSFET 60V 20V 103mOhm 18A 42W SMD -55°C ~ 175°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD6N25TM ON Semicondutor N-Channel 250V 4.4A (Tc) 50W (Tc) Surface Mount D-Pak
FDD6N25TM ON Semicondutor DPAK
  N-MOSFET 250V 30V 1,1Ohm 4,4A 50W SMD -55°C ~ 150°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD8424H ON Semiconductor Mosfet Array N and P-Channel 40V 9A, 6.5A 1.3W Surface Mount TO-252-4L
FDD8424H ON Semiconductor DPAK
  N/P-MOSFET 40V 20V 80mOhm 26A 35W SMD -55°C ~ 150°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD8896 ON Semiconductor N-Channel 30V 17A (Ta), 94A (Tc) 80W (Tc) Surface Mount TO-252AA
FDD8896 ON Semiconductor DPAK
  N-MOSFET 30V 20V 9,2mOhm 94A 80W SMD -55°C ~ 175°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD8896 TO-252 TECH PUBLIC TO252
 
 
Item available on a request
                     
FDG1024NZ Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70
FDG1024NZ SC70-6
 
 
Item available on a request
                     
FDG6303N Mosfet Array 2 N-Channel (Dual) 25V 500mA 300mW Surface Mount SC-88 (SC-70-6)
FDG6303N SC70-6
 
 
Item available on a request
                     
FDG6308P Trans MOSFET P-CH 20V 0.6A 6-Pin SC-70 T/R ONSEMI
FDG6308P SC70-6
 
 
Item available on a request
                     
FDG6308P-P SOT-363 MOSFETs ROHS
FDG6308P-P SOT363
 
 
Item available on a request
                     
FDG6321C Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-70 T/R ONSEMI
FDG6321C SC70-6
 
 
Item available on a request
                     
GT700P08T Transistor MOSFET; TO-220; P-Channel; NO ESD; -80V; -25A; 125W; -2.5V; 58mΩ; FDMC86139P;
GT700P08T TO220
 
 
Item available on a request
                     
FDMS6681Z Fairchild P-MOSFET 30V 21.1A 3.2mΩ 2.5W
FDMS6681Z Fairchild Power56
  P-MOSFET 30V 25V 5mOhm 122A 73W SMD -55°C ~ 150°C Power56 ON SEMICONDUCTOR
 
Item available on a request
                     
FDMS86101DC Trans MOSFET N-CH 100V 14.5A 8-Pin Power 56 T/R ONSEMI
FDMS86101DC  
 
 
Item available on a request
                     
FDN338P SOT-23 MOSFETs ROHS
FDN338P SOT23
 
 
Item available on a request
                     
FDN338P-NL SOT23-3 VBsemi Elec Transistor N-Channel MOSFET; 20V; 12V; 35mOhm; 5A; 2,5W; -55°C~150°C;
FDN338P-NL SOT23-3 VBsemi Elec SOT23
  P-MOSFET 20V 10V 12V 35mOhm 5A 2,5W SMD -55°C ~ 150°C SOT23 VBS
 
Item available on a request
                     
FDN361BN N-MOSFET 1.4A 30V 0.5W 0.11Ω
FDN361BN SuperSOT3
 
 
Item available on a request
                     
G2003A Transistor MOSFET; SOT-23-3L; N-Channel; NO ESD; 190V; 3A; 1.8W; 1.7V; 430mΩ~540mΩ; 440mΩ~560mΩ FDN86246-D;
G2003A SOT23-3
 
 
Item available on a request
                     
FDP20N50 Fairchild N-MOSFET 500V 20A 230mΩ 250W FDP20N50F FDP20N50 CSD18532KCS
FDP20N50 Fairchild TO220
  N-MOSFET 500V 30V 230mOhm 20A 250W THT -55°C ~ 150°C TO220 ON SEMICONDUCTOR
 
Item available on a request
                     
FDP8860 Fairchild N-MOSFET 30V 80A 2.5mΩ 254W
FDP8860 Fairchild TO220AB
  N-MOSFET 30V 20V 3,8mOhm 80A 254W SMD -55°C ~ 175°C TO220AB ON SEMICONDUCTOR
 
Item available on a request
                     
FDS3890 2x N-MOSFET 4.7A 80V 2W 0.044Ω
FDS3890 SOP08
  2xN-MOSFET
 
Item available on a request
                     
FDS9934C N/P-MOSFET 20V 6.5A/5A
FDS9934C SOP08
  N/P-MOSFET 20V 12V 90mOhm 6,5A 2W SMD -55°C ~ 150°C SOP08 ON SEMICONDUCTOR
 
Item available on a request
                     
FDT434P Fairchild P-MOSFET 20V 6A 50mΩ 1.1W
FDT434P Fairchild SOT223
  P-MOSFET 20V 8V 83mOhm 6A 3W SMD -55°C ~ 150°C SOT223 Fairchild
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.