Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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FDA50N50
N-MOSFET 48A 500V 625W 0.105Ω
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N-MOSFET | 500V | 20V | 105mOhm | 48A | 625W | THT | -55°C ~ 150°C | TO 3P | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDB070AN06A0
N-MOSFET 80A 60V 175W 0.007Ω
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N-MOSFET | 60V | 20V | 7mOhm | 80A | 175W | SMD | -55°C ~ 175°C | D2PAK | Fairchild | ||||
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Item available on a request
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FDC5614P
60V 3A 105m?@10V,3A 1.6W 3V@250uA 1 Piece P-Channel MOSFET YFW3P06LI
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Item available on a request
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Item in delivery
Estimated time: 2025-04-28
Quantity of pieces: 1000
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FDC637AN
Trans MOSFET N-CH 20V 6.2A 6-Pin SuperSOT T/R ONSEMI
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Item available on a request
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FDC6420C SSOT6 TECH PUBLIC
Transistor N/P-Channel MOSFET; 20V; 12V; 106mOhm/184mOhm; 3A/2,2A; 960mW; -55°C
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Item available on a request
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FDC658P
P-MOSFET 4A 30V 0.8W 0.05Ω
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P-MOSFET | 30V | 20V | 50mOhm | 4A | 800mW | SMD | -55°C ~ 150°C | TSOT23-6 | Fairchild | ||||
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Item available on a request
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FDD3682
N-MOSFET 32A 100V 95mW 0.032Ω
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N-MOSFET | 100V | 20V | 90mOhm | 32A | 95W | SMD | -55°C ~ 175°C | TO252 | Fairchild | ||||
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Item available on a request
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18N10
Transistor MOSFET; TO-252; N-Channel; NO ESD; 100V; 25A; 62.5W; 2V; 37mΩ; 42mΩ FDD3690
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Item available on a request
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FDD5612 ON Semiconductor
N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
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N-MOSFET | 60V | 20V | 103mOhm | 18A | 42W | SMD | -55°C ~ 175°C | DPAK | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDD6N25TM ON Semicondutor
N-Channel 250V 4.4A (Tc) 50W (Tc) Surface Mount D-Pak
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N-MOSFET | 250V | 30V | 1,1Ohm | 4,4A | 50W | SMD | -55°C ~ 150°C | DPAK | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDD8424H ON Semiconductor
Mosfet Array N and P-Channel 40V 9A, 6.5A 1.3W Surface Mount TO-252-4L
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N/P-MOSFET | 40V | 20V | 80mOhm | 26A | 35W | SMD | -55°C ~ 150°C | DPAK | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDD8896 ON Semiconductor
N-Channel 30V 17A (Ta), 94A (Tc) 80W (Tc) Surface Mount TO-252AA
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N-MOSFET | 30V | 20V | 9,2mOhm | 94A | 80W | SMD | -55°C ~ 175°C | DPAK | ON SEMICONDUCTOR | ||||
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Item available on a request
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Item available on a request
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FDG1024NZ
Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70
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Item available on a request
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FDG6303N
Mosfet Array 2 N-Channel (Dual) 25V 500mA 300mW Surface Mount SC-88 (SC-70-6)
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Item available on a request
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FDG6308P
Trans MOSFET P-CH 20V 0.6A 6-Pin SC-70 T/R ONSEMI
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Item available on a request
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FDG6308P-P
SOT-363 MOSFETs ROHS
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Item available on a request
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FDG6321C
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-70 T/R ONSEMI
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Item available on a request
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GT700P08T
Transistor MOSFET; TO-220; P-Channel; NO ESD; -80V; -25A; 125W; -2.5V; 58mΩ; FDMC86139P;
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Item available on a request
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FDMS6681Z Fairchild
P-MOSFET 30V 21.1A 3.2mΩ 2.5W
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P-MOSFET | 30V | 25V | 5mOhm | 122A | 73W | SMD | -55°C ~ 150°C | Power56 | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDMS86101DC
Trans MOSFET N-CH 100V 14.5A 8-Pin Power 56 T/R ONSEMI
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Item available on a request
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FDN338P
SOT-23 MOSFETs ROHS
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Item available on a request
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FDN338P-NL SOT23-3 VBsemi Elec
Transistor N-Channel MOSFET; 20V; 12V; 35mOhm; 5A; 2,5W; -55°C~150°C;
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P-MOSFET | 20V | 10V | 12V | 35mOhm | 5A | 2,5W | SMD | -55°C ~ 150°C | SOT23 | VBS | |||
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Item available on a request
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FDN361BN
N-MOSFET 1.4A 30V 0.5W 0.11Ω
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Item available on a request
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G2003A
Transistor MOSFET; SOT-23-3L; N-Channel; NO ESD; 190V; 3A; 1.8W; 1.7V; 430mΩ~540mΩ; 440mΩ~560mΩ FDN86246-D;
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Item available on a request
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FDP20N50 Fairchild
N-MOSFET 500V 20A 230mΩ 250W FDP20N50F FDP20N50 CSD18532KCS
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N-MOSFET | 500V | 30V | 230mOhm | 20A | 250W | THT | -55°C ~ 150°C | TO220 | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDP8860 Fairchild
N-MOSFET 30V 80A 2.5mΩ 254W
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N-MOSFET | 30V | 20V | 3,8mOhm | 80A | 254W | SMD | -55°C ~ 175°C | TO220AB | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDS3890
2x N-MOSFET 4.7A 80V 2W 0.044Ω
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2xN-MOSFET | |||||||||||||
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Item available on a request
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FDS9934C
N/P-MOSFET 20V 6.5A/5A
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N/P-MOSFET | 20V | 12V | 90mOhm | 6,5A | 2W | SMD | -55°C ~ 150°C | SOP08 | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDT434P Fairchild
P-MOSFET 20V 6A 50mΩ 1.1W
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P-MOSFET | 20V | 8V | 83mOhm | 6A | 3W | SMD | -55°C ~ 150°C | SOT223 | Fairchild | ||||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.