Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
FDY301NZ Trans MOSFET N-CH 20V 0.2A 3-Pin SOT-523F T/R
FDY301NZ SOT523
  N-MOSFET 20V 12V 10Ohm 200mA 625mW SMD -55°C ~ 150°C SOT523 ON SEMICONDUCTOR
 
Item available on a request
                     
FDY302NZ Trans MOSFET N-CH 20V 0.6A 3-Pin SC-89 T/R
FDY302NZ SC89-3
 
 
Item available on a request
                     
FQA11N90C_F109 N-MOSFET 11A 900V 300W 1.1Ω
FQA11N90C_F109 TO 3P
  N-MOSFET 900V 30V 1,1Ohm 11A 300W THT -55°C ~ 150°C TO 3P ON SEMICONDUCTOR
 
Item available on a request
                     
FQA30N40 Fairchild Trans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Rail
FQA30N40 Fairchild TO 3P
  N-MOSFET 400V 30V 140mOhm 30A 290W THT -55°C ~ 150°C TO 3P ON SEMICONDUCTOR
 
Item available on a request
                     
FQA36P15 N-MOSFET 36A 150V 294W 0.09Ω
FQA36P15 TO 3P
  P-MOSFET 150V 30V 90mOhm 36A 294W THT -55°C ~ 175°C TO 3P Fairchild
 
Item available on a request
                     
FQA6N90C Fairchild N-MOSFET 900V 6A 198W FQA6N90C_F109
FQA6N90C Fairchild TO 3P
  N-MOSFET 900V 30V 2,3Ohm 6,4A 198W THT -55°C ~ 150°C TO 3P Fairchild
 
Item available on a request
                     
FQA70N15 Fairchild N-MOSFET 150V 70A 330W
FQA70N15 Fairchild TO 3P
  N-MOSFET 150V 25V 28mOhm 70A 330W THT -55°C ~ 175°C TO 3P ON SEMICONDUCTOR
 
Item available on a request
                     
FQA9N90C Transistor: N-MOSFET; unipolar; 900V; 5.7A; 280W; TO3PN FQA9N90C-F109 FQA9N90C_F109
FQA9N90C TO-3P
  N-MOSFET 900V 30V 1,4Ohm 9A 280W THT -55°C ~ 150°C TO-3P ON SEMICONDUCTOR
 
Item available on a request
                     
FQB27P06TM P-MOSFET 27A 60V 120W 0.07Ω
FQB27P06TM TO263 (D2PAK)
  P-MOSFET 60V 25V 70mOhm 27A 120W SMD -55°C ~ 175°C TO263 (D2PAK) Fairchild
 
Item available on a request
                     
FQB6N80TM N-MOSFET 5.8A 800V 158W 1.95Ω
FQB6N80TM TO263 (D2PAK)
  N-MOSFET 800V 30V 1,95Ohm 5,8A 158W SMD -55°C ~ 150°C TO263 (D2PAK) ON SEMICONDUCTOR
 
Item available on a request
                     
FQD2N100TM N-MOSFET 1.6A 1000V 50W 9Ω
FQD2N100TM TO252 (DPACK)
  N-MOSFET 1000V 30V 9Ohm 1,6A 50W SMD -55°C ~ 150°C TO252 (DPACK) ON SEMICONDUCTOR
 
Item available on a request
                     
FQD4P40TM ON Semiconductor MOSFET P-CH 400V 2.7A DPAK
FQD4P40TM ON Semiconductor DPAK
 
 
Item available on a request
                     
FQD5P20TM Trans. P-Channel MOSFET; 200V; 30V; 1,4Ohm; 3,7A; 45W; -55°C ~ 150°C
FQD5P20TM TO252 (DPACK)
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 1
                     
FQP13N06L Logic N-MOSFET 13.6A 60V 45W 0.11Ω
FQP13N06L TO220
  N-MOSFET 60V 20V 140mOhm 13,6A 45W THT -55°C ~ 175°C TO220 Fairchild
 
Item available on a request
                     
FQP17N40 N-MOSFET 16A 400V 170W 0.27Ω
FQP17N40 TO220
  N-MOSFET 400V 30V 270mOhm 16A 170W THT -55°C ~ 150°C TO220 ON SEMICONDUCTOR
 
Item available on a request
                     
FQP3P50 Fairchild Trans MOSFET P-CH 500V 2.7A 3-Pin(3+Tab) TO-220AB Tube
FQP3P50 Fairchild TO220
  P-MOSFET 500V 30V 4,9Ohm 2,7A 85W THT -55°C ~ 150°C TO220 Fairchild
 
Item available on a request
                     
FQP4P40 P-MOSFET 3.5A 400V 85W 3.1Ω
FQP4P40 TO220
  P-MOSFET 400V 30V 3,1Ohm 3,5A 85W THT -55°C ~ 150°C TO220 Fairchild
 
Item available on a request
                     
FQP85N06 Fairchild N-MOSFET 60V 85A 10mΩ 160W
FQP85N06 Fairchild TO220
  N-MOSFET 60V 25V 10mOhm 85A 160W THT -55°C ~ 175°C TO220 Fairchild
 
Item available on a request
                     
FQPF20N06 Fairchild Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) TO-220FP Rail
FQPF20N06 Fairchild TO220
  N-MOSFET 60V 25V 60mOhm 15A 30W THT -55°C ~ 175°C TO220 Fairchild
 
Item available on a request
                     
FQPF47P06-YDTU TO220-FORMED LEADS TO220/3Q iso
  P-MOSFET 60V 25V 26mOhm 30A 62W THT -55°C ~ 175°C TO220/3Q iso ON SEMICONDUCTOR
 
Item available on a request
                     
FQS4901TF 2x N-MOSFET 0.45A 400V 2W 4.2Ω
FQS4901TF SOP08
  2xN-MOSFET 400V 25V 4,2Ohm 450mA 2W SMD -55°C ~ 150°C SOP08 ON SEMICONDUCTOR
 
Item available on a request
                     
FQU13N06LTU Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Rail
FQU13N06LTU IPAK
  N-MOSFET 60V 20V 145mOhm 11A 28W THT -55°C ~ 150°C IPAK ON SEMICONDUCTOR
 
Item available on a request
                     
G01N20LE Goford Semiconductor N200V,RD(MAX)<850M@10V,RD(MAX)<9 Transistors - FETs, MOSFETs - Single
G01N20LE Goford Semiconductor  
 
 
Item available on a request
                     
G01N20RE Transistor MOSFET; TO-92; N-Channel; YES ESD; 200V; 1.7A; 3W; 1.8V; 0.58Ω; 0.62Ω
G01N20RE TO92
 
 
Item available on a request
                     
G02P06 Goford Semiconductor P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Transistors - FETs, MOSFETs - Single
G02P06 Goford Semiconductor  
 
 
Item available on a request
                     
G06N06S Goford Semiconductor N60V,RD(MAX)<22M@10V,RD(MAX)<35M Transistors - FETs, MOSFETs - Single
G06N06S Goford Semiconductor  
 
 
Item available on a request
                     
G06N10 Goford Semiconductor N100V,RD(MAX)<240M@10V,VTH1.2V~3 Transistors - FETs, MOSFETs - Single
G06N10 Goford Semiconductor  
 
 
Item available on a request
                     
G06P01E Goford Semiconductor P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4 Transistors - FETs, MOSFETs - Single
G06P01E Goford Semiconductor  
 
 
Item available on a request
                     
G07P04S Goford Semiconductor P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Transistors - FETs, MOSFETs - Single
G07P04S Goford Semiconductor  
 
 
Item available on a request
                     
G08N06S Goford Semiconductor N60V, RD(MAX)<30M@10V,RD(MAX)<40 Transistors - FETs, MOSFETs - Single
G08N06S Goford Semiconductor  
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.