Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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FDY301NZ
Trans MOSFET N-CH 20V 0.2A 3-Pin SOT-523F T/R
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N-MOSFET | 20V | 12V | 10Ohm | 200mA | 625mW | SMD | -55°C ~ 150°C | SOT523 | ON SEMICONDUCTOR | ||||
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Item available on a request
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FDY302NZ
Trans MOSFET N-CH 20V 0.6A 3-Pin SC-89 T/R
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Item available on a request
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FQA11N90C_F109
N-MOSFET 11A 900V 300W 1.1Ω
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N-MOSFET | 900V | 30V | 1,1Ohm | 11A | 300W | THT | -55°C ~ 150°C | TO 3P | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQA30N40 Fairchild
Trans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Rail
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N-MOSFET | 400V | 30V | 140mOhm | 30A | 290W | THT | -55°C ~ 150°C | TO 3P | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQA36P15
N-MOSFET 36A 150V 294W 0.09Ω
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P-MOSFET | 150V | 30V | 90mOhm | 36A | 294W | THT | -55°C ~ 175°C | TO 3P | Fairchild | ||||
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Item available on a request
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FQA6N90C Fairchild
N-MOSFET 900V 6A 198W FQA6N90C_F109
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N-MOSFET | 900V | 30V | 2,3Ohm | 6,4A | 198W | THT | -55°C ~ 150°C | TO 3P | Fairchild | ||||
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Item available on a request
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FQA70N15 Fairchild
N-MOSFET 150V 70A 330W
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N-MOSFET | 150V | 25V | 28mOhm | 70A | 330W | THT | -55°C ~ 175°C | TO 3P | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQA9N90C
Transistor: N-MOSFET; unipolar; 900V; 5.7A; 280W; TO3PN FQA9N90C-F109 FQA9N90C_F109
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N-MOSFET | 900V | 30V | 1,4Ohm | 9A | 280W | THT | -55°C ~ 150°C | TO-3P | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQB27P06TM
P-MOSFET 27A 60V 120W 0.07Ω
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P-MOSFET | 60V | 25V | 70mOhm | 27A | 120W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | Fairchild | ||||
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Item available on a request
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FQB6N80TM
N-MOSFET 5.8A 800V 158W 1.95Ω
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N-MOSFET | 800V | 30V | 1,95Ohm | 5,8A | 158W | SMD | -55°C ~ 150°C | TO263 (D2PAK) | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQD2N100TM
N-MOSFET 1.6A 1000V 50W 9Ω
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N-MOSFET | 1000V | 30V | 9Ohm | 1,6A | 50W | SMD | -55°C ~ 150°C | TO252 (DPACK) | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQD4P40TM ON Semiconductor
MOSFET P-CH 400V 2.7A DPAK
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Item available on a request
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FQD5P20TM
Trans. P-Channel MOSFET; 200V; 30V; 1,4Ohm; 3,7A; 45W; -55°C ~ 150°C
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Item available on a request
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Item in delivery
Estimated time: 2025-04-30
Quantity of pieces: 1
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FQP13N06L
Logic N-MOSFET 13.6A 60V 45W 0.11Ω
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N-MOSFET | 60V | 20V | 140mOhm | 13,6A | 45W | THT | -55°C ~ 175°C | TO220 | Fairchild | ||||
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Item available on a request
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FQP17N40
N-MOSFET 16A 400V 170W 0.27Ω
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N-MOSFET | 400V | 30V | 270mOhm | 16A | 170W | THT | -55°C ~ 150°C | TO220 | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQP3P50 Fairchild
Trans MOSFET P-CH 500V 2.7A 3-Pin(3+Tab) TO-220AB Tube
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P-MOSFET | 500V | 30V | 4,9Ohm | 2,7A | 85W | THT | -55°C ~ 150°C | TO220 | Fairchild | ||||
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Item available on a request
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FQP4P40
P-MOSFET 3.5A 400V 85W 3.1Ω
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P-MOSFET | 400V | 30V | 3,1Ohm | 3,5A | 85W | THT | -55°C ~ 150°C | TO220 | Fairchild | ||||
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Item available on a request
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FQP85N06 Fairchild
N-MOSFET 60V 85A 10mΩ 160W
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N-MOSFET | 60V | 25V | 10mOhm | 85A | 160W | THT | -55°C ~ 175°C | TO220 | Fairchild | ||||
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Item available on a request
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FQPF20N06 Fairchild
Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) TO-220FP Rail
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N-MOSFET | 60V | 25V | 60mOhm | 15A | 30W | THT | -55°C ~ 175°C | TO220 | Fairchild | ||||
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Item available on a request
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FQPF47P06-YDTU TO220-FORMED LEADS
P-MOSFET 60V 30A 62W
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P-MOSFET | 60V | 25V | 26mOhm | 30A | 62W | THT | -55°C ~ 175°C | TO220/3Q iso | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQS4901TF
2x N-MOSFET 0.45A 400V 2W 4.2Ω
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2xN-MOSFET | 400V | 25V | 4,2Ohm | 450mA | 2W | SMD | -55°C ~ 150°C | SOP08 | ON SEMICONDUCTOR | ||||
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Item available on a request
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FQU13N06LTU
Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Rail
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N-MOSFET | 60V | 20V | 145mOhm | 11A | 28W | THT | -55°C ~ 150°C | IPAK | ON SEMICONDUCTOR | ||||
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Item available on a request
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G01N20LE Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G01N20RE
Transistor MOSFET; TO-92; N-Channel; YES ESD; 200V; 1.7A; 3W; 1.8V; 0.58Ω; 0.62Ω
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Item available on a request
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G02P06 Goford Semiconductor
P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G06N06S Goford Semiconductor
N60V,RD(MAX)<22M@10V,RD(MAX)<35M Transistors - FETs, MOSFETs - Single
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Item available on a request
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G06N10 Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G06P01E Goford Semiconductor
P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G07P04S Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G08N06S Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40 Transistors - FETs, MOSFETs - Single
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.