Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
BSZ025N04LSATMA1 INFINEON Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP
BSZ025N04LSATMA1 INFINEON  
 
 
Item available on a request
                     
BSZ037N06LS5ATMA1 Infineon Technologies Trans MOSFET N-CH 60V 18A T/R BSZ037N06LS5ATMA1
BSZ037N06LS5ATMA1 Infineon Technologies  
 
 
Item available on a request
                     
BSZ075N08NS5ATMA1 INFINEON Transistor N-Channel MOSFET; 80V; 20V; 7.5mOhm; 40A; 69W; -55°C~150°C;
BSZ075N08NS5ATMA1 INFINEON TSDSON08
  N-MOSFET 80V 20V 7,5mOhm 40A 69W SMD -55°C ~ 150°C TSDSON08 INFINEON
 
Item available on a request
                     
BUB323ZG ON Semiconductor Trans Darlington NPN 350V 10A 150000mW 3-Pin(2+Tab) D2PAK
BUB323ZG   ON Semiconductor  
 
 
Item available on a request
                     
BUK6D120-40EX BUK6D120-40E/SOT1220/SOT1220 Transistors - FETs, MOSFETs - Single
BUK6D120-40EX DFN2020MD-6
 
 
Item available on a request
                     
BXS1150N10M Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W;
BXS1150N10M SOT23-3
 
 
Item available on a request
                     
C2M0080120D Cree/Wolfspeed N-MOSFET 1200V 36A
C2M0080120D Cree/Wolfspeed TO247
  N-MOSFET 1200V 20V 128mOhm 36A 192W THT -55°C ~ 150°C TO247 Cree
 
Item available on a request
                     
CJ3400S3 30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs ROHS Podobny do: RTR040N03TL;
CJ3400S3 SOT23
 
 
Item available on a request
                     
DH105N07 DONGHAI N-MOSFET 60A 68V 110W 15Ω Similar to: IRFZ44NPBF;
DH105N07 DONGHAI TO220
  N-MOSFET 68V 20V 15mOhm 60A 110W THT -55°C ~ 175°C TO220 Donghai
 
Item available on a request
                     
DH240N06LD DONGHAI Transistor N-Channel MOSFET; 60V; 20V; 35mOhm; 30A; 50W; -55°C ~ 175°C; Similar to: IRLR024NPBF, IRLR024NTRPBF, IRLR024NTRLPBF, IRLR024NTRLPBF;
DH240N06LD DONGHAI TO252 (DPACK)
  N-MOSFET 60V 20V 35mOhm 30A 50W THT -55°C ~ 175°C TO252 (DPACK) Donghai
 
Item available on a request
                     
DHD12N10 DONGHAI Transistor N-Channel MOSFET; 100V; 20V; 110mOhm; 12A; 28W; -55°C ~ 175°C; Similar to: IRLR120NPBF, IRLR120NTRPBF, IRLR120NTRLPBF
DHD12N10 DONGHAI TO252 (DPACK)
  N-MOSFET 100V 20V 110mOhm 12A 28W SMD -55°C ~ 175°C TO252 (DPACK) Donghai
 
Item available on a request
                     
F10N60 DONGHAI Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP
F10N60 DONGHAI TO220iso
  N-MOSFET 600V 30V 900mOhm 10A 40W THT -55°C ~ 150°C TO220iso Donghai
 
Item available on a request
                     
DI020N06D1 Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R ODPOWIEDNIK: DI020N06D1-DIO;
DI020N06D1 TO252
 
 
Item available on a request
                     
DI110N15PQ DComponents MOSFET, 150V, 110A, 56W transistors - fets, mosfets - single
DI110N15PQ DComponents  
 
 
Item available on a request
                     
DMG1012UW SOT323 MOSFETs ROHS
DMG1012UW SOT323
 
 
Item available on a request
                     
DMG4800LK3-13 Trans MOSFET N-CH 30V 10A Automotive 3-Pin(2+Tab) DPAK T/R
DMG4800LK3-13  
 
 
Item available on a request
                     
DMN6140L-7 Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R
DMN6140L-7 SOT23
 
 
Item available on a request
                     
3415A Transistor MOSFET; SOT-23; P-Channel; YES ESD; -20V; -4A; 1.4W; -0.7V; ; 28mΩ AO3415A; DMP1045U
3415A SOT23
 
 
Item available on a request
                     
DMP2018LFK-7 Trans MOSFET P-CH 20V 9.2A Automotive 6-Pin UDFN EP T/R
DMP2018LFK-7 UDFN2523-6
  P-MOSFET 20V 12V 25mOhm 9,2A 2,1W SMD -55°C ~ 150°C UDFN2523-6 DIODES
 
Item available on a request
                     
DMP2305U SOT-23 MOSFETs ROHS
DMP2305U SOT23
 
 
Item available on a request
                     
3401 Transistor MOSFET; SOT-23; P-Channel; NO ESD; -30V; -4.2A; 1W; -0.8v; 39mΩ; 44mΩ DMP3056L; AO3406; G3401L SOT23-3L GOFORD
3401 SOT23
 
 
Item available on a request
                     
G35P04D5 Transistor MOSFET; DFN5*6-8L; P-Channel; NO ESD; -40V; -35A; 35W; -1.5V; 11mΩ; 15mΩ DMP4015SPSQ;
G35P04D5 DFN08(5x6)
 
 
Item available on a request
                     
DMP4051LK3-13 P-MOSFET 40V 7.2A 51mΩ 2.14W
DMP4051LK3-13 TO252
 
 
Item available on a request
                     
GT090N06S Transistor MOSFET; SOP-8; N-Channel; NO ESD; 60V; 14A; 3.1W; 1.6V; 6.5mΩ; 8.5mΩ DMT4008LSS-13; AO4484; G13N04 GOFORD
GT090N06S SOP08
 
 
Item available on a request
                     
G30N04D3 Transistor MOSFET; DFN3*3-8L; N-Channel; NO ESD; 40V; 30A; 50W; 1.8V; 6.5mΩ; 8mΩ DMTH48M3SFVW; DMT4011LFG
G30N04D3 DFN08(3x3)
 
 
Item available on a request
                     
DN2450N8-G Microchip N-MOSFET 500V 230mA 10Ω 1.6W
DN2450N8-G Microchip SOT89
  N-MOSFET 500V 500V 20V 10Ohm 230mA 1,6W SMD -55°C ~ 150°C SOT89 MICROCHIP
 
Item available on a request
                     
EPC2067 TRANS GAN .0015OHM 40V 14LGA
EPC2067 DIE
 
 
Item available on a request
                     
EPC2070 TRANS GAN DIE 100V .022OHM
EPC2070 DIE
 
 
Item available on a request
                     
FCP7N60 N-MOSFET 7A 600V 83W 0.60Ω
FCP7N60 TO220
  N-MOSFET 600V 30V 600mOhm 7A 83W THT -55°C ~ 150°C TO220 Fairchild
 
Item available on a request
                     
FDA20N50_F109 N-MOSFET 22A 500V 280W 0.23Ω
FDA20N50_F109 TO 3P
  N-MOSFET 500V 30V 230mOhm 22A 280W THT -55°C ~ 150°C TO 3P Fairchild
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.