Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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BSZ025N04LSATMA1 INFINEON
Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP
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Item available on a request
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BSZ037N06LS5ATMA1 Infineon Technologies
Trans MOSFET N-CH 60V 18A T/R BSZ037N06LS5ATMA1
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Item available on a request
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BSZ075N08NS5ATMA1 INFINEON
Transistor N-Channel MOSFET; 80V; 20V; 7.5mOhm; 40A; 69W; -55°C~150°C;
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N-MOSFET | 80V | 20V | 7,5mOhm | 40A | 69W | SMD | -55°C ~ 150°C | TSDSON08 | INFINEON | ||||
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Item available on a request
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BUB323ZG ON Semiconductor
Trans Darlington NPN 350V 10A 150000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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BUK6D120-40EX
BUK6D120-40E/SOT1220/SOT1220 Transistors - FETs, MOSFETs - Single
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Item available on a request
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BXS1150N10M
Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W;
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Item available on a request
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C2M0080120D Cree/Wolfspeed
N-MOSFET 1200V 36A
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N-MOSFET | 1200V | 20V | 128mOhm | 36A | 192W | THT | -55°C ~ 150°C | TO247 | Cree | ||||
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Item available on a request
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CJ3400S3
30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs ROHS Podobny do: RTR040N03TL;
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Item available on a request
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DH105N07 DONGHAI
N-MOSFET 60A 68V 110W 15Ω Similar to: IRFZ44NPBF;
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N-MOSFET | 68V | 20V | 15mOhm | 60A | 110W | THT | -55°C ~ 175°C | TO220 | Donghai | ||||
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Item available on a request
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DH240N06LD DONGHAI
Transistor N-Channel MOSFET; 60V; 20V; 35mOhm; 30A; 50W; -55°C ~ 175°C; Similar to: IRLR024NPBF, IRLR024NTRPBF, IRLR024NTRLPBF, IRLR024NTRLPBF;
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N-MOSFET | 60V | 20V | 35mOhm | 30A | 50W | THT | -55°C ~ 175°C | TO252 (DPACK) | Donghai | ||||
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Item available on a request
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DHD12N10 DONGHAI
Transistor N-Channel MOSFET; 100V; 20V; 110mOhm; 12A; 28W; -55°C ~ 175°C; Similar to: IRLR120NPBF, IRLR120NTRPBF, IRLR120NTRLPBF
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N-MOSFET | 100V | 20V | 110mOhm | 12A | 28W | SMD | -55°C ~ 175°C | TO252 (DPACK) | Donghai | ||||
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Item available on a request
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F10N60 DONGHAI
Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP
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N-MOSFET | 600V | 30V | 900mOhm | 10A | 40W | THT | -55°C ~ 150°C | TO220iso | Donghai | ||||
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Item available on a request
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DI020N06D1
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R ODPOWIEDNIK: DI020N06D1-DIO;
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Item available on a request
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DI110N15PQ DComponents
MOSFET, 150V, 110A, 56W transistors - fets, mosfets - single
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Item available on a request
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DMG1012UW
SOT323 MOSFETs ROHS
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Item available on a request
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DMG4800LK3-13
Trans MOSFET N-CH 30V 10A Automotive 3-Pin(2+Tab) DPAK T/R
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Item available on a request
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DMN6140L-7
Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R
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Item available on a request
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3415A
Transistor MOSFET; SOT-23; P-Channel; YES ESD; -20V; -4A; 1.4W; -0.7V; ; 28mΩ AO3415A; DMP1045U
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Item available on a request
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DMP2018LFK-7
Trans MOSFET P-CH 20V 9.2A Automotive 6-Pin UDFN EP T/R
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P-MOSFET | 20V | 12V | 25mOhm | 9,2A | 2,1W | SMD | -55°C ~ 150°C | UDFN2523-6 | DIODES | ||||
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Item available on a request
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DMP2305U
SOT-23 MOSFETs ROHS
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Item available on a request
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3401
Transistor MOSFET; SOT-23; P-Channel; NO ESD; -30V; -4.2A; 1W; -0.8v; 39mΩ; 44mΩ DMP3056L; AO3406; G3401L SOT23-3L GOFORD
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Item available on a request
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G35P04D5
Transistor MOSFET; DFN5*6-8L; P-Channel; NO ESD; -40V; -35A; 35W; -1.5V; 11mΩ; 15mΩ DMP4015SPSQ;
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Item available on a request
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DMP4051LK3-13
P-MOSFET 40V 7.2A 51mΩ 2.14W
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Item available on a request
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GT090N06S
Transistor MOSFET; SOP-8; N-Channel; NO ESD; 60V; 14A; 3.1W; 1.6V; 6.5mΩ; 8.5mΩ DMT4008LSS-13; AO4484; G13N04 GOFORD
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Item available on a request
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G30N04D3
Transistor MOSFET; DFN3*3-8L; N-Channel; NO ESD; 40V; 30A; 50W; 1.8V; 6.5mΩ; 8mΩ DMTH48M3SFVW; DMT4011LFG
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Item available on a request
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DN2450N8-G Microchip
N-MOSFET 500V 230mA 10Ω 1.6W
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N-MOSFET | 500V | 500V | 20V | 10Ohm | 230mA | 1,6W | SMD | -55°C ~ 150°C | SOT89 | MICROCHIP | |||
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Item available on a request
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EPC2067
TRANS GAN .0015OHM 40V 14LGA
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EPC2070
TRANS GAN DIE 100V .022OHM
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Item available on a request
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FCP7N60
N-MOSFET 7A 600V 83W 0.60Ω
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N-MOSFET | 600V | 30V | 600mOhm | 7A | 83W | THT | -55°C ~ 150°C | TO220 | Fairchild | ||||
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Item available on a request
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FDA20N50_F109
N-MOSFET 22A 500V 280W 0.23Ω
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N-MOSFET | 500V | 30V | 230mOhm | 22A | 280W | THT | -55°C ~ 150°C | TO 3P | Fairchild | ||||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.