Unipolar Transistors (results: 5467)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
G48N03D3 Goford Semiconductor N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4 Transistors - FETs, MOSFETs - Single
G48N03D3 Goford Semiconductor  
 
 
Item available on a request
                     
G50N03J Goford Semiconductor N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
G50N03J Goford Semiconductor  
 
 
Item available on a request
                     
G50N03K Goford Semiconductor N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
G50N03K Goford Semiconductor  
 
 
Item available on a request
                     
G60N04K Goford Semiconductor N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
G60N04K Goford Semiconductor  
 
 
Item available on a request
                     
G60N10T Goford Semiconductor N100V,RD(MAX)<25M@10V,RD(MAX)<30 Transistors - FETs, MOSFETs - Single
G60N10T Goford Semiconductor  
 
 
Item available on a request
                     
G65P06F Goford Semiconductor P-CH, -60V, 65A, RD(MAX)<18M@-10 Transistors - FETs, MOSFETs - Single
G65P06F Goford Semiconductor  
 
 
Item available on a request
                     
G65P06K Goford Semiconductor P60V,RD(MAX)<18M@-10V,VTH-2V~-3. Transistors - FETs, MOSFETs - Single
G65P06K Goford Semiconductor  
 
 
Item available on a request
                     
G65P06T Goford Semiconductor P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Transistors - FETs, MOSFETs - Single
G65P06T Goford Semiconductor  
 
 
Item available on a request
                     
G6P06 Goford Semiconductor P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Transistors - FETs, MOSFETs - Single
G6P06 Goford Semiconductor  
 
 
Item available on a request
                     
G70N04T Goford Semiconductor N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
G70N04T Goford Semiconductor  
 
 
Item available on a request
                     
G70P02K Goford Semiconductor P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)< Transistors - FETs, MOSFETs - Single
G70P02K Goford Semiconductor  
 
 
Item available on a request
                     
G75P04K Goford Semiconductor P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Transistors - FETs, MOSFETs - Single
G75P04K Goford Semiconductor  
 
 
Item available on a request
                     
G7P03L Goford Semiconductor P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Transistors - FETs, MOSFETs - Single
G7P03L Goford Semiconductor  
 
 
Item available on a request
                     
G7P03S Goford Semiconductor P30V,RD(MAX)<22M@-10V,RD(MAX)<33 Transistors - FETs, MOSFETs - Single
G7P03S Goford Semiconductor  
 
 
Item available on a request
                     
G86N06K Goford Semiconductor N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Transistors - FETs, MOSFETs - Single
G86N06K Goford Semiconductor  
 
 
Item available on a request
                     
GC11N65F Goford Semiconductor N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single
GC11N65F Goford Semiconductor  
 
 
Item available on a request
                     
GC11N65K Goford Semiconductor N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single
GC11N65K Goford Semiconductor  
 
 
Item available on a request
                     
GC11N65T Goford Semiconductor N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single
GC11N65T Goford Semiconductor  
 
 
Item available on a request
                     
GT007N04TL Transistor MOSFET; TOLL-8L; N-Channel; NO ESD; 40V; 150A; 156W; 1.5V; 1.2mΩ; 1.6mΩ
GT007N04TL  
 
 
Item available on a request
                     
GT025N06D5 Goford Semiconductor N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Transistors - FETs, MOSFETs - Single
GT025N06D5 Goford Semiconductor  
 
 
Item available on a request
                     
GT035N06T Goford Semiconductor N-CH, 60V,170A, RD(MAX)<3.5M@10V Transistors - FETs, MOSFETs - Single
GT035N06T Goford Semiconductor  
 
 
Item available on a request
                     
GT045N10M Transistor MOSFET; TO-263; N-Channel; NO ESD; 100V; 120A; 180W; 3V; 3.8mΩ;
GT045N10M TO263
 
 
Item available on a request
                     
GT045N10T Transistor MOSFET; TO-220; N-Channel; NO ESD; 100V; 150A; 156W; 3V; 4.3mΩ
GT045N10T TO220
 
 
Item available on a request
                     
GT060N04D3 Goford Semiconductor N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Transistors - FETs, MOSFETs - Single
GT060N04D3 Goford Semiconductor  
 
 
Item available on a request
                     
GT090N06D52 Goford Semiconductor N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Transistors - FETs, MOSFETs - Arrays
GT090N06D52 Goford Semiconductor  
 
 
Item available on a request
                     
GT095N10D5 Goford Semiconductor N100V,RD(MAX)<11M@10V,RD(MAX)<15 Transistors - FETs, MOSFETs - Single
GT095N10D5 Goford Semiconductor  
 
 
Item available on a request
                     
GT095N10K Goford Semiconductor N100V, RD(MAX)<10.5M@10V,RD(MAX) Transistors - FETs, MOSFETs - Single
GT095N10K Goford Semiconductor  
 
 
Item available on a request
                     
GT100N12D5 Goford Semiconductor N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
GT100N12D5 Goford Semiconductor  
 
 
Item available on a request
                     
GT100N12T Goford Semiconductor N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
GT100N12T Goford Semiconductor  
 
 
Item available on a request
                     
GT105N10F Goford Semiconductor N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
GT105N10F Goford Semiconductor  
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.