Unipolar Transistors (results: 5467)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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G48N03D3 Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G50N03J Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
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Item available on a request
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G50N03K Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
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Item available on a request
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G60N04K Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
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Item available on a request
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G60N10T Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G65P06F Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G65P06K Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3. Transistors - FETs, MOSFETs - Single
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Item available on a request
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G65P06T Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Transistors - FETs, MOSFETs - Single
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Item available on a request
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G6P06 Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G70N04T Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
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Item available on a request
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G70P02K Goford Semiconductor
P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)< Transistors - FETs, MOSFETs - Single
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Item available on a request
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G75P04K Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Transistors - FETs, MOSFETs - Single
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Item available on a request
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G7P03L Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G7P03S Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G86N06K Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Transistors - FETs, MOSFETs - Single
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Item available on a request
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GC11N65F Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single
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Item available on a request
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GC11N65K Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single
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Item available on a request
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GC11N65T Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT007N04TL
Transistor MOSFET; TOLL-8L; N-Channel; NO ESD; 40V; 150A; 156W; 1.5V; 1.2mΩ; 1.6mΩ
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Item available on a request
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GT025N06D5 Goford Semiconductor
N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT035N06T Goford Semiconductor
N-CH, 60V,170A, RD(MAX)<3.5M@10V Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT045N10M
Transistor MOSFET; TO-263; N-Channel; NO ESD; 100V; 120A; 180W; 3V; 3.8mΩ;
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Item available on a request
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GT045N10T
Transistor MOSFET; TO-220; N-Channel; NO ESD; 100V; 150A; 156W; 3V; 4.3mΩ
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Item available on a request
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GT060N04D3 Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT090N06D52 Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Transistors - FETs, MOSFETs - Arrays
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Item available on a request
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GT095N10D5 Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15 Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT095N10K Goford Semiconductor
N100V, RD(MAX)<10.5M@10V,RD(MAX) Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT100N12D5 Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT100N12T Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT105N10F Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.