Unipolar Transistors (results: 2045)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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STB75NF75LT4
Transistor N-Channel MOSFET; 80V; 20V; 10mOhm; 120A; 370W; -55°C~175°C; STB75NF75LT4-VB; CMB75NF75; HT75NF75;
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Item available on a request
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N-MOSFET | 80V | 20V | 10mOhm | 120mA | 370mW | THT | -55°C ~ 175°C | TO263 | VBSEMI ELEC | ||||||||||||
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Item in delivery
Estimated time: 2024-05-30
Quantity of pieces: 1
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FDV304P
Tranzystor P-Channel MOSFET; 25V; 8V; 2Ohm; 460mA; 350mW; -55°C ~ 150°C; FDV 304 P;
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Item available on a request
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Item in delivery
Estimated time: 2024-05-15
Quantity of pieces: 3000
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IRF7406
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406PBF; IRF7406TRPBF; IRF9335PBF; IRF7406PBF-GURT;
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Manufacturer:
YFW Manufacturer part number: YFW9435AS RoHS Case style: SOP08t/r |
In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 70mOhm | 5,8A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | YFW | ||||||||||||
SUD50P04-09L-E3
Transistor P-Channel MOSFET; -40V; +/-20V; 59mOhm; -50A; 136W; -55°C~175°C;
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In stock:
80 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | -40V | 20V | 20mOhm | -50A | 136W | SMD | -55°C ~ 175°C | TO252 | VBsemi | ||||||||||||
IRFR5505
Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 8,5A; 60W; -55°C~175°C;
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Item available on a request
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P-MOSFET | 60V | 20V | 110mOhm | 8,5A | 60W | THT | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||||||||||
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Item in delivery
Estimated time: 2024-05-20
Quantity of pieces: 500
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IRFR3910
Transistor N-Channel MOSFET; 100V; 20V; 100mOhm; 14,7A; 34,7W; -55°C~150°C;
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Item available on a request
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N-MOSFET | 100V | 20V | 100mOhm | 14,5A | 34,7W | THT | -55°C ~ 150°C | TO252 | TECH PUBLIC | ||||||||||||
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Item in delivery
Estimated time: 2024-05-20
Quantity of pieces: 200
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IRFR5410
Transistor P-Channel MOSFET; 100V; 20V; 210mOhm; 13A; 66W; -55°C~175°C;
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | 100V | 20V | 210mOhm | 13A | 66W | SMD | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||||||||||
IRFR024N
Transistor N-Channel MOSFET; 60V; 20V; 33mOhm; 25A; 50W; -55°C~175°C;
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Item available on a request
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N-MOSFET | 60V | 20V | 33mOhm | 25A | 50W | SMD | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||||||||||
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Item in delivery
Estimated time: 2024-05-20
Quantity of pieces: 500
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IRFR3709Z
Transistor N-Channel MOSFET; 30V; 20V; 5mOhm; 90A; 181W; -55°C~175°C; Substitute: IRFR3709ZTRRPBF; IRFR3709ZTRPBF;
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In stock:
150 pcs. |
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Packaging: 150 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 5mOhm | 90A | 181W | THT | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||||||||||
IRFR9120N
Transistor P-Channel MOSFET; 100V; 20V; 210mOhm; 13A; 66W; -55°C~150°C;
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Item available on a request
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P-MOSFET | 100V | 20V | 110mOhm | 13A | 66W | THT | -55°C ~ 150°C | TO252 | TECH PUBLIC | ||||||||||||
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Item in delivery
Estimated time: 2024-05-20
Quantity of pieces: 100
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STB75NF75T4
Transistor N-Channel MOSFET; 80V; 20V; 10mOhm; 65A; 120W; -55°C~150°C;
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Item available on a request
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N-MOSFET | 80V | 20V | 10mOhm | 65A | 120W | SMD | -55°C ~ 150°C | TO263 | VBsemi | ||||||||||||
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Item in delivery
Estimated time: 2024-05-30
Quantity of pieces: 1
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IRF9910TRPBF
Transistor N-Channel MOSFET; 20V; 12V; 4,3Ohm; 10A; 2,7W; -55°C~150°C; IRF9910TRPBF-VB;
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 1,3Ohm | 10A | 2,7W | SMD | -55°C ~ 150°C | SOP08 | VBS | ||||||||||||
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Item in delivery
Estimated time: 2024-05-30
Quantity of pieces: 100
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AO3422
Transistor N-Channel MOSFET; 55V; 12V; 120mOhm; 2A; 1,56W; -55°C~150°C;
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In stock:
200 pcs. |
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Packaging: 300 Quantity (multiple 1) |
N-MOSFET | 55V | 12V | 120mOhm | 2A | 1,56W | SMD | -55°C ~ 150°C | SOT23 | MSK | ||||||||||||
AOD4130
Transistor N-Channel MOSFET; 60V; 20V; 38mOhm; 30A; 34,7W; -55°C~150°C; AOD4130; AOD4130-HXY; AOD4130-MS; AOD4130-VB;
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In stock:
100 pcs. |
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Packaging: 150 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 38mOhm | 30A | 34,7W | SMD | -55°C ~ 150°C | TO252 (DPACK) t/r | HXY MOSFET | ||||||||||||
UT9435HG-AA3-R
Transistor P-Channel MOSFET; -30V; 20V; 90mOhm; 5,3A; 2,5W; -55°C~150°C; Substitute 1:1: STN3PF06;
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In stock:
150 pcs. |
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Packaging: 150 Quantity (multiple 1) |
P-MOSFET | -30V | 20V | 90mOhm | 5,3A | 2,5W | SMD | -55°C ~ 150°C | SOT223 | UTC | ||||||||||||
IRLML0100 SOT23-3 KEXIN
IRLML0100TRPBF;
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Item available on a request
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Item in delivery
Estimated time: 2024-05-30
Quantity of pieces: 3000
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IRLML6402 SOT23 KEXIN
Transistor P-Channel MOSFET; 20V; 12V; 75mOhm; 3,2A; 1,7W; -55°C~150°C;
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Item available on a request
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P-MOSFET | 20V | 12V | 75mOhm | 3,2A | 1,7W | SMD | -55°C ~ 150°C | SOT23 | KEXIN | ||||||||||||
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Item in delivery
Estimated time: 2024-05-30
Quantity of pieces: 3000
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IRLR8726 TO252 RoHS
Transistor N-MOSFET; 30V; 20V; 7,5mOhm; 90A; 181W; -55°C ~ 175°C; Odpowiednik: IRLR8726PBF; IRLR8726TRLPBF; IRLR8726TRPBF; SP001573950; SP0015528
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In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 7,5mOhm | 90A | 181W | SMA | -55°C ~ 175°C | TO252 (DPACK) | TECH PUBLIC | ||||||||||||
NTD5867N
Transistor N-MOSFET; 60V; 20V; 33mOhm; 20A; 50W; -55°C~150°C; Substitute: NTD5867NLT4G; NTD5867NL-VB; NTD5867NLT4G-VB; NTD5867NLT4G;
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In stock:
150 pcs. |
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Packaging: 150 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 33mOhm | 20A | 50W | THT | -55°C ~ 150°C | TO252 | TECH PUBLIC | ||||||||||||
AO3400
Transistor N-Channel MOSFET; 30V; 12V; 35mOhm; 30A; 1,5W; -55°C~150°C;
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In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
N-MOSFET | 30V | 12V | 35mOhm | 30A | 1,5W | SMD | -55°C ~ 150°C | SOT23 | GOODWORK | ||||||||||||
SI3420A-TP
Transistor N-Channel MOSFET; 20V; 10V; 35mOhm; 6A; 1,25W; -55°C~150°C; (similar to SI3420A-13P)
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In stock:
1000 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
N-MOSFET | 20V | 10V | 35mOhm | 6A | 1,25W | SMD | -55°C ~ 150°C | SOT23 | MCC | ||||||||||||
SI2308BDS
Transistor N-Channel MOSFET; 60V; 20V; 105mOhm; 3A; 350mW; -55°C~150°C; Substitute: SI2308BDS-VB; SI2308BDS-T1-E3; SI2308BDS-T1-BE3; SI2308BDS-T1-GE3; SI2308BDS-T1-GE3-VB;
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In stock:
140 pcs. |
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Packaging: 150 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 105mOhm | 3A | 350mW | SMD | -55°C ~ 150°C | SOT23 | TECH PUBLIC | ||||||||||||
8205A TSSOP8
Transistor N-Channel MOSFET; 20V; 12V; 27mOhm; 6A; 1,5W; -55°C ~ 150°C; Substitute: HX8205A; MS8205A; FS8205A; SC8205A; 8205A/A; BLM8205A; WSP8205A; VBZC8205A; TPM8205AT8; UT8205AG-P08-R; NM8205A;
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In stock:
90 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 27mOhm | 6A | 1,5W | SMD | -55°C ~ 150°C | TSSOP08 | HXY MOSFET | ||||||||||||
In stock:
90 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 27mOhm | 6A | 1,5W | SMD | -55°C ~ 150°C | TSSOP08 | HXY MOSFET | ||||||||||||
AO3420 SOT23-3L
Transistor N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C;
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In stock:
300 pcs. |
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Packaging: 300 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 55mOhm | 6A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | HOTTECH | ||||||||||||
SH8JB5
Transistor P-Channel MOSFET; 40V; 16V; 8,5A; 15,3mOhm; 2W; -55°C~150°C; Bubstitute: SH8JB5TB1;
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In stock:
10 pcs. |
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Packaging: 10 Quantity (multiple 1) |
P-MOSFET | 40V | 16V | 15,3mOhm | 8,5A | 2W | SMD | -55°C ~ 150°C | SOP08 | ROHM | ||||||||||||
BSS131
Transistor N-Channel MOSFET; 240V; +/-20V; 14Ohm; 100mA; 360mW; -55°C~150°C; Substitute: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 H6327;
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In stock:
150 pcs. |
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Packaging: 150 Quantity (multiple 1) |
N-MOSFET | 240V | 20V | 14Ohm | 100mA | 360mW | SMD | -55°C ~ 150°C | SOT23 | HXY MOSFET | ||||||||||||
Manufacturer:
YFW Manufacturer part number: BSS131 RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
N-MOSFET | 240V | 20V | 14Ohm | 100mA | 360mW | SMD | -55°C ~ 150°C | SOT23 | HXY MOSFET | ||||||||||||
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Item in delivery
Estimated time: 2024-08-10
Quantity of pieces: 6000
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Item in delivery
Estimated time: 2024-07-30
Quantity of pieces: 3000
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WPM2015
Transistor P-Channel MOSFET; 20V; +/-8V; 2,4A; 110mOhm; 1,1W; -55°C~150°C; Substitute: HXY MOSFET WPM2015; WILLSEMI WPM2015-3/TR; VBSEMI WPM2015-3/TR; WPM2015-HXY;
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In stock:
300 pcs. |
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Packaging: 300 Quantity (multiple 1) |
P-MOSFET | 20V | 8V | 110mOhm | 2,4A | 1,1W | SMD | -55°C ~ 150°C | SOT23 | KUU | ||||||||||||
In stock:
300 pcs. |
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Packaging: 300 Quantity (multiple 1) |
P-MOSFET | 20V | 8V | 110mOhm | 2,4A | 1,1W | SMD | -55°C ~ 150°C | SOT23 | KUU | ||||||||||||
2SK3878 TOSHIBA
N-MOSFET 900V 9A 1.3Ω 150W 2SK3878(STA1,E,S)
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In stock:
175 pcs. |
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Packaging: 25/200 Quantity (multiple 1) |
N-MOSFET | 900V | 30V | 1,3Ohm | 9A | 150W | THT | -55°C ~ 150°C | TO 3P | Toshiba | ||||||||||||
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Item in delivery
Estimated time: 2024-05-15
Quantity of pieces: 500
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IRF7853
N-MOSFET HEXFET 100V 8,3A 2.5W 0,018Ω
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In stock:
9 pcs. |
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Packaging: 400 Quantity (multiple 1) |
N-MOSFET | 100V | 20V | 18mOhm | 8,3A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | Infineon (IRF) | ||||||||||||
IRLML2502TRPBF HXY MOSFET
Transistor N-Channel MOSFET; 20V; 12V; 40mOhm; 6A; 1,25W; -55°C ~ 150°C; Equivalent: IRLML2502TRPBF; SP001558336;
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In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 40mOhm | 6A | 1,25W | SMD | -55°C ~ 150°C | SOT23 | HXY MOSFET |
Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.