Unipolar Transistors (results: 5451)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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AP2304AGN-HF ADVANCED POWER
N-MOSFET 30V 117mΩ 2.5A 1.38W
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In stock:
110 pcs. |
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Packaging: 200 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 190mOhm | 2,5A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2305CGN-HF ADVANCED POWER
P-MOSFET 30V 3.2A 1.38W
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In stock:
90 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | 30V | 12V | 120mOhm | 3,2A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2307GN-HF-3 ADVANCED POWER
P-MOSFET 16V 4A 1.38W
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In stock:
2320 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
P-MOSFET | 16V | 8V | 90mOhm | 4A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2306GN-HF-3 ADVANCED POWER
N-MOSFET 20V 5.3A 1.38W
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In stock:
50 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 50mOhm | 5,3A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
In stock:
3000 pcs. |
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Packaging: 3000/21000 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 50mOhm | 5,3A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
In stock:
51000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 50mOhm | 5,3A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2309GN-HF-3 APEC ADVANCED POWER ELECTRONICS CORP
P-MOSFET 3.7A 30V 1.38W 0.075Ω AP2309GN AP2309GN-HF AP2309GN-HF-3
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In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 120mOhm | 3,7A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2310GN-HF-3 ADVANCED POWER
N-MOSFET 60V 3A 1.38W
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In stock:
150 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 120mOhm | 3A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2313GN-HF ADVANCED POWER
P-MOSFET 20V 2.5A 0.83W
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In stock:
20 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | 20V | 12V | 300mOhm | 2,5A | 830mW | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2314GN-HF-3 ADVANCED POWER
N-MOSFET 20V 3.5A 830mW
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 125mOhm | 3,5A | 830mW | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2316GN-HF-3 ADVANCED POWER
N-MOSFET 30V 4.7A 1.38W
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In stock:
70 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 72mOhm | 4,7A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2319GN-HF-3 ADVANCED POWER
P-MOSFET 30V 3.1A 1.38W
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In stock:
900 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 150mOhm | 3,1A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2320GN-HF-3 ADVANCED POWER
Transistor N-Channel MOSFET; 100V; 20V; 9Ohm; 250mA; 700mW; -55°C ~ 150°C;
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 100V | 20V | 9Ohm | 250mA | 700mW | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2324GN-HF-3 ADVANCED POWER
Transistor N-Channel MOSFET; 20V; 12V; 39mOhm; 6A; 1,38W; -55°C ~ 150°C;
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 20V | 12V | 39mOhm | 6A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2334GN-HF-3 ADVANCED POWER
Transistor N-Channel MOSFET; 30V; 20V; 42mOhm; 5,6A; 1,38W; -55°C ~ 150°C;
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In stock:
50 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 42mOhm | 5,6A | 1,38W | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP2603GY-HF-3 ADVANCED POWER
P-MOSFET 20V 5A 2W
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In stock:
124 pcs. |
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Packaging: 500 Quantity (multiple 1) |
P-MOSFET | 20V | 12V | 120mOhm | 5A | 2W | SMD | -55°C ~ 150°C | SOT26 | Advanced Power Electronics Corp. | |||||||||||||
AP2608GY-HF-3 ADVANCED POWER
Transistor N-Channel MOSFET; 150V; 20V; 2,6Ohm; 570mA; 2W; -55°C ~ 150°C;
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 150V | 20V | 2,6Ohm | 570mA | 2W | SMD | -55°C ~ 150°C | SOT26 | Advanced Power Electronics Corp. | |||||||||||||
AP2N7002K-HF-3 ADVANCED POWER
N-MOSFET 0.45A 60V 0.70W 2Ω
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In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 4Ohm | 450mA | 700mW | SMD | -55°C ~ 150°C | SOT23 | Advanced Power Electronics Corp. | |||||||||||||
AP4410GM APEC
N-MOSFET 30V 13.5mΩ 10A 2.5W
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In stock:
440 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 30V | 25V | 22mOhm | 10A | 2,5W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP4435GJ APEC
P-MOSFET 30V 20mΩ 40A 44.6W
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In stock:
36 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 36mOhm | 40A | 44,6W | THT | -55°C ~ 150°C | TO251 (IPACK) | Advanced Power Electronics Corp. | |||||||||||||
AP4435GM-HF ADVANCED POWER
P-MOSFET 30V 9A 2.5W
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In stock:
200 pcs. |
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Packaging: 200 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 32mOhm | 9A | 2,5W | SMD | -55°C ~ 150°C | SO 8 | Advanced Power Electronics Corp. | |||||||||||||
In stock:
30 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 32mOhm | 9A | 2,5W | SMD | -55°C ~ 150°C | SO 8 | Advanced Power Electronics Corp. | |||||||||||||
AP4501AGEM APEC
N/P-MOSFET 30V 20mΩ 8A 2W
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In stock:
80 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N/P-MOSFET | 30V | 20V | 150mOhm | 8A | 2W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP4501AGM APEC
N/P-MOSFET 30V 28mΩ 7A 2W
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In stock:
125 pcs. |
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Packaging: 200 Quantity (multiple 1) |
N/P-MOSFET | 30V | 20V | 90mOhm | 7A | 2W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP4501GM APEC
N/P-MOSFET 30V 28mΩ 7A 2W
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In stock:
50 pcs. |
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Packaging: 200 Quantity (multiple 1) |
N/P-MOSFET | 30V | 20V | 90mOhm | 7A | 2W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP4503BGM APEC
N/P-MOSFET 30V 18mΩ 8.2A 2W
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In stock:
175 pcs. |
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Packaging: 200 Quantity (multiple 1) |
N/P-MOSFET | 30V | 20V | 45mOhm | 8,2A | 2W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP4503GM APEC
N/P-MOSFET 30V 28mΩ 6.9A 2W
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In stock:
100 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N/P-MOSFET | 30V | 20V | 55mOhm | 6,9A | 2W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP4578GH APEC
N/P-MOSFET 60V 72mΩ 9A 8.9A
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In stock:
150 pcs. |
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Packaging: 200 Quantity (multiple 1) |
N/P-MOSFET | 60V | 25V | 150mOhm | 9A | 8,9W | SMD | -55°C ~ 150°C | TO252 | Advanced Power Electronics Corp. | |||||||||||||
AP4800DGM APEC
N-MOSFET 30V 18mΩ 9A 2W
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In stock:
200 pcs. |
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Packaging: 200 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 30mOhm | 9A | 2W | SMD | -55°C ~ 150°C | SOP08 | Advanced Power Electronics Corp. | |||||||||||||
AP60T10GS-HF-3 ADVANCED POWER
N-MOSFET 67A 100V 167W 0.018Ω AP60T10GS-HF-3TR
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In stock:
435 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 100V | 20V | 18mOhm | 67A | 167W | SMD | -55°C ~ 150°C | TO263 (D2PAK) | Advanced Power Electronics Corp. | |||||||||||||
AP6679GH-HF-3 ADVANCED POWER
Transistor P-Channel MOSFET; 30V; 20V; 15mOhm; 75A; 89W; -55°C ~ 150°C;
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In stock:
0 pcs. |
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Packaging: 100 Quantity (multiple 1) |
P-MOSFET | 30V | 20V | 15mOhm | 75A | 89W | SMD | -55°C ~ 150°C | TO252 | Advanced Power Electronics Corp. | |||||||||||||
AP72T03GH-HF-3 ADVANCED POWER
Transistor N-Channel MOSFET; 30V; 20V; 15mOhm; 62A; 60W; -55°C ~ 175°C;
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In stock:
90 pcs. |
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Packaging: 100 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 15mOhm | 62A | 60W | SMD | -55°C ~ 175°C | TO252 | Advanced Power Electronics Corp. | |||||||||||||
AP80N03GP APEC
N-MOSFET 30V 8mΩ 80A 83.3W
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In stock:
75 pcs. |
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Packaging: 50/100 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 12mOhm | 80A | 83,3W | THT | -55°C ~ 150°C | TO220 | Advanced Power Electronics Corp. |
Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.