Unipolar Transistors (results: 2047)

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Product Cart
Transistor type
Max. drain-source voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
ZXMS6004FFTA Transistor N-Channel MOSFET; 60V; 600mOhm; 1,3A; 1,5W; -40°C ~ 150°C;
ZXMS6004FFTA RoHS || ZXMS6004FFTA SOT23F
Manufacturer:
DIODES/ZETEX
Manufacturer part number:
ZXMS6004FFTA RoHS
Case style:
SOT23Ft/r
Datasheet
In stock:
50 pcs.
Quantity of pieces 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,8809 0,6466 0,5177 0,4451 0,4194
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Packaging:
50
Quantity (multiple 1)
N-MOSFET 60V 600mOhm 1,3A 1,5W SMD -40°C ~ 150°C SOT23F DIODES
IRF7807 Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC IRF7807PBF IRF7807TRPBF SP001570502
IRF7807TR RoHS || IRF7807 SOP08
Manufacturer:
International Rectifier
Manufacturer part number:
IRF7807TR RoHS
Case style:
SOP08t/r
Datasheet
In stock:
90 pcs.
Quantity of pieces 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,1479 0,8036 0,6841 0,6255 0,6044
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Packaging:
100
Quantity (multiple 1)
N-MOSFET 30V 12V 25mOhm 8,3A 2,5W SMD -55°C ~ 150°C SOP08 International Rectifier
IRLL014TRPBF Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
IRLL014TRPBF RoHS || IRLL014TRPBF SOT223
Manufacturer:
Vishay
Manufacturer part number:
IRLL014TRPBF RoHS
Case style:
SOT223t/r
Datasheet
In stock:
1060 pcs.
Quantity of pieces 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5552 0,3374 0,2600 0,2336 0,2223
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Packaging:
2500
Quantity (multiple 1)
N-MOSFET 60V 10V 280mOhm 2,7A 3,1W SMD -55°C ~ 150°C SOT223 VISHAY
IRLML6401 Transistor P-MOSFET; 12V; 8V; 125mOhm; 4,3A; 1,3W; -55°C ~ 150°C; Substitute: IRLML6401TRPBF; IRLML6401PBF;
IRLML6401TR RoHS || IRLML6401 SOT23
Manufacturer:
VBsemi
Manufacturer part number:
IRLML6401TR RoHS
Case style:
SOT23t/r
Datasheet
In stock:
43 pcs.
Quantity of pieces 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2413 0,1326 0,0876 0,0731 0,0686
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Packaging:
500
Quantity (multiple 1)
P-MOSFET 12V 8V 125mOhm 4,3A 1,3W SMD -55°C ~ 150°C SOT23 VBSEMI ELEC
BSS138A-TP Transistor N-Channel MOSFET; 50V; 20V; 1,6Ohm; 220mA; 350mW; -55°C~150°C;
BSS138A-TP RoHS || BSS138A-TP SOT23
Manufacturer:
Micro Commercial Components Corp.
Manufacturer part number:
BSS138A-TP RoHS
Case style:
SOT23t/r
Datasheet
In stock:
3000 pcs.
Quantity of pieces 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1933 0,0918 0,0515 0,0391 0,0351
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Packaging:
3000
Quantity (multiple 1)
N-MOSFET 50V 20V 1,6Ohm 220mA 350mW SMD -55°C ~ 150°C SOT23 MCC
SI2304BDS Transistor N-MOSFET; 30V; 20V; 105mOhm; 2,6A; 750mW; -55°C~150°C; SI2304-TP; SI2304BDS-T1-BE3; SI2304BDS-T1-GE3; SI2304BDS-T1-E3; Transistors - FETs, MOSFETs - Single; SI2304BDS-T1-GE3-VB;
SI2304BDS-T1-GE3 RoHS || SI2304BDS SOT23
Manufacturer:
VBsemi
Manufacturer part number:
SI2304BDS-T1-GE3 RoHS
Case style:
SOT23t/r
Datasheet
In stock:
50 pcs.
Quantity of pieces 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3866 0,2530 0,1816 0,1588 0,1488
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Packaging:
50
Quantity (multiple 1)
N-MOSFET 30V 20V 105mOhm 2,6A 750mW SMD -55°C ~ 150°C SOT23 VBsemi
IRFL024Z Transistor N-MOSFET; Unipolar; 55V; 5.1A; 2.8W; 57,5mΩ; -55°C ~ 150°C;
IRFL024ZTRPBF RoHS || IRFL024Z SOT223
Manufacturer:
NKGLBDT
Manufacturer part number:
IRFL024ZTRPBF RoHS
Case style:
SOT223t/r
 
In stock:
500 pcs.
Quantity of pieces 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,3842 0,2134 0,1684 0,1530 0,1481
Add to comparison tool
Packaging:
500
Quantity (multiple 1)
N-MOSFET 55V 20V 57,5mOhm 5,1A 2,8W SMD -55°C ~ 150°C SOT223 Infineon (IRF)
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.